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EP0999597
European procedure
Extract from the Register of European Patents
EP About this file: EP0999597
| EP0999597 - Ferroelectric nonvolatile transistor and method of making same [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 08.12.2006 Database last updated on 19.10.2024 | Most recent event Tooltip | 08.12.2006 | No opposition filed within time limit | published on 10.01.2007 [2007/02] | Applicant(s) | For all designated states Sharp Kabushiki Kaisha 22-22 Nagaike-cho Abeno-ku Osaka 545-8522 / JP | [N/P] |
| Former [2006/03] | For all designated states SHARP KABUSHIKI KAISHA 22-22 Nagaike-cho Abeno-ku Osaka 545-8522 / JP | ||
| Former [2000/19] | For all designated states SHARP KABUSHIKI KAISHA 22-22 Nagaike-cho Abeno-ku Osaka 545-8522 / JP | Inventor(s) | 01 /
Hsu, Sheng Teng 2216 NW Trout Court Camas, WA 98607 / US | 02 /
Zhang, Fengyang 16804 SE 32nd Street Vancouver, WA 98683 / US | 03 /
Maa, Jer-shen 1511 SE Solomon Loop Vancouver, WA 98683 / US | 04 /
Li, Tingkai 18701-27th Street Vancouver, WA 98683 / US | [2000/19] | Representative(s) | Brown, Kenneth Richard, et al R.G.C. Jenkins & Co 26 Caxton Street London SW1H 0RJ / GB | [N/P] |
| Former [2000/19] | Brown, Kenneth Richard, et al R.G.C. Jenkins & Co. 26 Caxton Street London SW1H 0RJ / GB | Application number, filing date | 99307192.7 | 10.09.1999 | [2000/19] | Priority number, date | US19980187238 | 05.11.1998 Original published format: US 187238 | [2000/19] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0999597 | Date: | 10.05.2000 | Language: | EN | [2000/19] | Type: | B1 Patent specification | No.: | EP0999597 | Date: | 18.01.2006 | Language: | EN | [2006/03] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 31.01.2000 | Classification | IPC: | H01L29/51, H01L21/28 | [2000/19] | CPC: |
H01L29/6684 (EP,US);
H01L29/78 (KR);
H01L29/78391 (EP,US)
| Designated contracting states | DE, FR, GB [2001/04] |
| Former [2000/19] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Ferroelektrischer nichtflüchtiger Transistor und dessen Herstellungsverfahren | [2000/19] | English: | Ferroelectric nonvolatile transistor and method of making same | [2000/19] | French: | Transistor ferro-électrique non-volatile et son procédé de fabrication | [2000/19] | Examination procedure | 17.07.2000 | Examination requested [2000/37] | 13.11.2000 | Loss of particular rights, legal effect: designated state(s) | 13.03.2001 | Despatch of communication of loss of particular rights: designated state(s) AT, BE, CH, CY, DK, ES, FI, GR, IE, IT, LI, LU, MC, NL, PT, SE | 07.12.2004 | Despatch of a communication from the examining division (Time limit: M04) | 14.04.2005 | Reply to a communication from the examining division | 14.06.2005 | Communication of intention to grant the patent | 24.10.2005 | Fee for grant paid | 24.10.2005 | Fee for publishing/printing paid | Opposition(s) | 19.10.2006 | No opposition filed within time limit [2007/02] | Fees paid | Renewal fee | 12.09.2001 | Renewal fee patent year 03 | 12.09.2002 | Renewal fee patent year 04 | 12.09.2003 | Renewal fee patent year 05 | 14.09.2004 | Renewal fee patent year 06 | 14.09.2005 | Renewal fee patent year 07 | Penalty fee | Penalty fee Rule 85a EPC 1973 | 15.12.2000 | AT M01 Not yet paid | 15.12.2000 | BE M01 Not yet paid | 15.12.2000 | CH M01 Not yet paid | 15.12.2000 | CY M01 Not yet paid | 15.12.2000 | DK M01 Not yet paid | 15.12.2000 | ES M01 Not yet paid | 15.12.2000 | FI M01 Not yet paid | 15.12.2000 | GR M01 Not yet paid | 15.12.2000 | IE M01 Not yet paid | 15.12.2000 | IT M01 Not yet paid | 15.12.2000 | LU M01 Not yet paid | 15.12.2000 | MC M01 Not yet paid | 15.12.2000 | NL M01 Not yet paid | 15.12.2000 | PT M01 Not yet paid | 15.12.2000 | SE M01 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]EP0540993 (RAMTRON INT CORP [US]); | [XAY]US5384729 (SAMESHIMA KATSUMI [JP]); | [A]US5744374 (MOON JONG [KR]); | [Y]EP0869557 (SHARP KK [JP], et al); |