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EP1026732
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EP About this file: EP1026732
| EP1026732 - A method of forming a high voltage semiconductor device [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 17.03.2001 Database last updated on 19.10.2024 | Most recent event Tooltip | 17.03.2001 | Withdrawal of application | published on 02.05.2001 [2001/18] | Applicant(s) | For all designated states MOTOROLA, INC. 1303 East Algonquin Road Schaumburg, IL 60196 / US | [2000/32] | Inventor(s) | 01 /
Jaume, Denis 31 Allée de Noirmoutier 31770 Colomiers / FR | 02 /
Martinez, Christian 3 Allée des Bouleaux 31520 Ramonville / FR | 03 /
Roche, Hervé 1 Impasse de l'Abbee Lestrade 31300 Toulouse / FR | 04 /
Viale, Eric 55 rue des Sports Apt No 7 31200 Toulouse / FR | [2000/32] | Representative(s) | Hudson, Peter David, et al Motorola European Intellectual Property Midpoint Alencon Link, Basingstoke Hampshire RG21 7PL / GB | [N/P] |
| Former [2000/32] | Hudson, Peter David, et al Motorola, European Intellectual Property Operations, Midpoint Alencon Link Basingstoke, Hampshire RG21 7PL / GB | Application number, filing date | 99400264.0 | 05.02.1999 | [2000/32] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP1026732 | Date: | 09.08.2000 | Language: | EN | [2000/32] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 15.07.1999 | Classification | IPC: | H01L21/312, H01L29/06, H01L23/29 | [2000/32] | CPC: |
H01L21/02118 (EP,US);
H01L21/022 (EP,US);
H01L23/3192 (EP);
H01L2924/0002 (EP);
H01L2924/13055 (EP)
| C-Set: |
H01L2924/0002, H01L2924/00 (EP)
| Designated contracting states | (deleted) [2001/17] |
| Former [2000/32] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Herstellungsmethode für eine Hochspannungshalbleiteranordnung | [2000/32] | English: | A method of forming a high voltage semiconductor device | [2000/32] | French: | Méthode de fabrication d'un dispositif semiconducteur à haute tension | [2000/32] | Examination procedure | 05.03.2001 | Application withdrawn by applicant [2001/18] | Fees paid | Renewal fee | 05.02.2001 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]US5798562 (RABOVSKY JOHANNES [DE], et al) [X] 1,11,17 * column 2, line 61 - line 64 *; | [XA]US5288989 (ISHAQUE A NADEEM [US], et al) [X] 11 * abstract * [A] 1,17; | [XA]US5252844 (TAKAGI HIROSHI [JP]) [X] 11 * column 5, line 27 - line 31; figure 2 * [A] 1,17; | [A]DE4033361 (LESAG LEISTUNGSELEKTRONIK STAH [DE]) [A] 1,8-11,14-17 * the whole document *; | [A]US5861656 (KERI IMRE [SE]) [A] 1,2,6,11,17 * column 2, line 22 - line 28; figure 5 * |