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EP1088340
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EP About this file: EP1088340
| EP1088340 - FABRICATION OF GALLIUM NITRIDE SEMICONDUCTOR LAYERS BY LATERAL GROWTH FROM TRENCH SIDEWALLS [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 04.01.2019 Database last updated on 06.07.2024 | |
| Former | Examination is in progress Status updated on 29.06.2018 | Most recent event Tooltip | 11.01.2019 | Change - classification | published on 13.02.2019 [2019/07] | Applicant(s) | For all designated states NORTH CAROLINA STATE UNIVERSITY 103 Holladay Hall, Campus Box 7003 Raleigh North Carolina 27695-7003 / US | [N/P] |
| Former [2001/14] | For all designated states NORTH CAROLINA STATE UNIVERSITY 103 Holladay Hall, Campus Box 7003 Raleigh, North Carolina 27695-7003 / US | Inventor(s) | 01 /
ZHELEVA, Tsvetanka 2109 Copeland Way Chapel Hill, NC 27514 / US | 02 /
THOMSON, Darren, B. 312-D Bargate Drive Cary, NC 27511 / US | 03 /
SMITH, Scott, A. 505 Crawley Run 101 Centerville, OH 45458 / US | 04 /
LINTHICUM, Kevin, J. 474 Crosslink Drive Angier, NC 27501 / US | 05 /
GEHRKE, Thomas 116B Bim Street Carrboro, NC 27510 / US | 06 /
DAVIS, Robert, F. 5705 Calton Drive Raleigh, NC 27612 / US | [2001/14] | Representative(s) | HGF 1 City Walk Leeds LS11 9DX / GB | [N/P] |
| Former [2011/16] | Chalk, Anthony John, et al Harrison Goddard Foote 106 Micklegate York, Yorkshire YO1 6JX / GB | ||
| Former [2001/14] | Sanderson, Nigel Paul Harrison Goddard Foote, Tower House, Merrion Way Leeds LS2 8PA / GB | Application number, filing date | 99928515.8 | 09.06.1999 | [2001/14] | WO1999US12967 | Priority number, date | US19980088761P | 10.06.1998 Original published format: US 88761 P | US19990327136 | 07.06.1999 Original published format: US 327136 | [2001/50] |
| Former [2001/14] | US19980088761P | 10.06.1998 | |
| US19990327136 | 07.03.1999 | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO9965068 | Date: | 16.12.1999 | Language: | EN | [1999/50] | Type: | A1 Application with search report | No.: | EP1088340 | Date: | 04.04.2001 | Language: | EN | The application published by WIPO in one of the EPO official languages on 16.12.1999 takes the place of the publication of the European patent application. | [2001/14] | Search report(s) | International search report - published on: | EP | 16.12.1999 | Classification | IPC: | H01L21/20, C30B25/04, C30B29/40 | [2001/14] | CPC: |
H01L21/0265 (EP,US);
H01L21/18 (KR);
H01L21/02378 (EP,US);
H01L21/02458 (EP,US);
H01L21/0254 (EP,US);
H01L21/0262 (EP,US);
H01L21/02639 (EP,US);
H01L21/02647 (EP,US);
H01S2304/12 (EP,US);
H01S5/021 (EP,US)
(-)
| Designated contracting states | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE [2001/14] | Title | German: | HERSTELLUNG VON GALLIUMNITRID-HALBLEITERSCHICHTEN MITTELS LATERALEM WACHSTUM, AUSGEHEND VON GRABEN-SEITENWÄNDEN | [2001/14] | English: | FABRICATION OF GALLIUM NITRIDE SEMICONDUCTOR LAYERS BY LATERAL GROWTH FROM TRENCH SIDEWALLS | [2001/14] | French: | FABRICATION DE COUCHES SEMI-CONDUCTRICES DE NITRURE DE GALLIUM PAR TIRAGE LATERAL A PARTIR DE PAROIS LATERALES DE TRANCHEE | [2001/14] | Entry into regional phase | 10.01.2001 | National basic fee paid | 10.01.2001 | Designation fee(s) paid | 10.01.2001 | Examination fee paid | Examination procedure | 18.11.1999 | Request for preliminary examination filed International Preliminary Examining Authority: EP | 10.01.2001 | Amendment by applicant (claims and/or description) | 10.01.2001 | Examination requested [2001/14] | 23.05.2006 | Despatch of a communication from the examining division (Time limit: M04) | 02.10.2006 | Reply to a communication from the examining division | 25.02.2015 | Despatch of a communication from the examining division (Time limit: M04) | 24.06.2015 | Reply to a communication from the examining division | 19.06.2018 | Despatch of a communication from the examining division (Time limit: M02) | 30.08.2018 | Application deemed to be withdrawn, date of legal effect [2019/06] | 26.09.2018 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2019/06] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 23.05.2006 | Fees paid | Renewal fee | 27.06.2001 | Renewal fee patent year 03 | 12.06.2002 | Renewal fee patent year 04 | 12.06.2003 | Renewal fee patent year 05 | 14.06.2004 | Renewal fee patent year 06 | 14.06.2005 | Renewal fee patent year 07 | 14.06.2006 | Renewal fee patent year 08 | 14.06.2007 | Renewal fee patent year 09 | 25.06.2008 | Renewal fee patent year 10 | 26.06.2009 | Renewal fee patent year 11 | 25.06.2010 | Renewal fee patent year 12 | 27.06.2011 | Renewal fee patent year 13 | 26.06.2012 | Renewal fee patent year 14 | 27.06.2013 | Renewal fee patent year 15 | 30.06.2014 | Renewal fee patent year 16 | 29.06.2015 | Renewal fee patent year 17 | 27.06.2016 | Renewal fee patent year 18 | 27.06.2017 | Renewal fee patent year 19 | 27.06.2018 | Renewal fee patent year 20 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [A]EP0551721 (AMANO HIROSHI [JP], et al) [A] 1,3-5,7,10,13,14,16,18,21,26,29,30,32,35,36,41,43 * page 4, line 32 - page 6, line 22; figure 4 *; | [DA] - NAM O-H ET AL, "GROWTH OF GAN AND AL0.2GA0.8N ON PATTERENED SUBSTRATES VIA ORGANOMETALLIC VAPOR PHASE EPITAXY", JAPANESE JOURNAL OF APPLIED PHYSICS, (19970501), vol. 36, no. 5A, ISSN 0021-4922, pages L532 - L535, XP000728854 [DA] 1,10 * page L532 * DOI: http://dx.doi.org/10.1143/JJAP.36.L532 | [PXO] - ZHELEVA T S ET AL, "Pendeo-epitaxy - A new approach for lateral growth of gallium nitride structures", MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, Fall Meeting of the Materials Research Society, Boston, vol. 4S1, no. G3.38, ISSN 1092-5783, (19981130), URL: http://nsr.mij.mrs.org/4S1/G3.38, (19990928), XP002117241 [PXO] 1-21,26,29-36,41-45 * the whole document * |