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Extract from the Register of European Patents

EP About this file: EP1078401

EP1078401 - METHOD OF CONTROLLING A POWER MOSFET [Right-click to bookmark this link]
Former [2001/09]POWER MOS TRANSISTOR WITH OVERTEMPERATURE PROTECTION CIRCUIT
[2010/07]
StatusNo opposition filed within time limit
Status updated on  10.06.2011
Database last updated on 28.06.2024
Most recent event   Tooltip10.06.2011No opposition filed within time limitpublished on 13.07.2011  [2011/28]
Applicant(s)For all designated states
Robert Bosch GmbH
Postfach 30 02 20
70442 Stuttgart / DE
[2008/44]
Former [2001/09]For all designated states
GKR Gesellschaft für Fahrzeugklimaregelung mbH
Herrenwiesenweg 24
D-71701 Schwieberdingen / DE
Inventor(s)01 / HERSEL, Walter
Obere Burghalde 60
D-71229 Leonberg / DE
02 / BREITLING, Wolfram
Hermann-Hesse-Strasse 18/1
D-74343 Sachensheim / DE
03 / WEIBLE, Reinhold
Helmulfstrasse 8
D-70437 Stuttgart / DE
04 / FALLIANO, Rolf
Michelauer Strasse 11
D-73635 Rudersberg-Steinenberg / DE
 [2001/09]
Representative(s)Behrens, Ralf Holger, et al
Robert Bosch GmbH
Zentralabteilung Patente
Postfach 30 02 20
70442 Stuttgart / DE
[N/P]
Former [2008/44]Behrens, Ralf Holger, et al
Robert Bosch GmbH Zentralabteilung Patente Postfach 30 02 20
70442 Stuttgart / DE
Former [2001/21]Behrens, Ralf Holger, Dipl.-Phys.
Robert Bosch GmbH Zentralabteilung Patente Postfach 30 02 20
70442 Stuttgart / DE
Application number, filing date99932653.107.05.1999
[2001/09]
WO1999DE01378
Priority number, dateDE199812183415.05.1998         Original published format: DE 19821834
[2001/09]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report
No.:WO9960628
Date:25.11.1999
Language:DE
[1999/47]
Type: A1 Application with search report 
No.:EP1078401
Date:28.02.2001
Language:DE
The application published by WIPO in one of the EPO official languages on 25.11.1999 takes the place of the publication of the European patent application.
[2001/09]
Type: B1 Patent specification 
No.:EP1078401
Date:04.08.2010
Language:DE
[2010/31]
Search report(s)International search report - published on:EP25.11.1999
ClassificationIPC:H01L27/02, H02H5/04
[2001/09]
CPC:
H01L23/34 (EP,US); H01L2924/0002 (EP,US)
C-Set:
H01L2924/0002, H01L2924/00 (EP,US)
Designated contracting statesDE,   ES,   FR,   GB,   IT [2001/09]
TitleGerman:VERFAHREN ZUR STEUERUNG EINES POWER-MOS-TRANSISTORS[2010/07]
English:METHOD OF CONTROLLING A POWER MOSFET[2010/07]
French:METHODE DE COMMANDE D'UN TRANSISTOR DE PUISSANCE A EFFET DE CHAMP[2010/07]
Former [2001/09]POWER-MOS-TRANSISTOR MIT TEMPERATURSCHUTZSCHALTUNG
Former [2001/09]POWER MOS TRANSISTOR WITH OVERTEMPERATURE PROTECTION CIRCUIT
Former [2001/09]TRANSISTOR MOS DE PUISSANCE MUNI D'UN CIRCUIT DE PROTECTION DE LA TEMPERATURE
Entry into regional phase15.12.2000National basic fee paid 
15.12.2000Designation fee(s) paid 
15.12.2000Examination fee paid 
Examination procedure04.12.1999Request for preliminary examination filed
International Preliminary Examining Authority: EP
15.12.2000Examination requested  [2001/09]
14.03.2008Despatch of a communication from the examining division (Time limit: M06)
04.09.2008Reply to a communication from the examining division
13.01.2010Date of oral proceedings
29.01.2010Minutes of oral proceedings despatched
09.02.2010Communication of intention to grant the patent
22.03.2010Fee for grant paid
22.03.2010Fee for publishing/printing paid
Opposition(s)06.05.2011No opposition filed within time limit [2011/28]
Fees paidRenewal fee
31.05.2001Renewal fee patent year 03
31.05.2002Renewal fee patent year 04
02.06.2003Renewal fee patent year 05
01.06.2004Renewal fee patent year 06
31.05.2005Renewal fee patent year 07
31.05.2006Renewal fee patent year 08
31.05.2007Renewal fee patent year 09
17.03.2008Renewal fee patent year 10
02.06.2009Renewal fee patent year 11
31.05.2010Renewal fee patent year 12
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Cited inInternational search[X]WO9806142  (MOTOROLA INC [US]) [X] 1-3,5-7,9 * figures 1,2 * * page 4, line 3 - page 7, line 19 *;
 [X]JPS6447077  ;
 [X]US5726481  (MOODY PAUL T [GB]) [X] 1,3-5,7-9 * figures 1,3,6 * * column 5, line 51 - line 54 * * column 5, line 63 - line 67 * * column 9, line 10 - column 11, line 10 * * column 12, line 26 - line 31 *;
 [X]US5457419  (TIHANYI JENOE [DE]) [X] 1,3,4,7,9 * figures 1,2 * * column 1, line 58 - column 4, line 4 *;
 [X]US5304837  (HIEROLD CHRISTOFER [DE]) [X] 1,2,7-9 * figures 1,2 * * column 3, line 60 - column 4, line 58 *;
 [X]EP0565807  (SGS THOMSON MICROELECTRONICS [IT]) [X] 1,6,7,9 * figures 1-5 * * column 2, line 4 - line 19 * * column 3, line 17 - column 4, line 32 *
 [X]  - PATENT ABSTRACTS OF JAPAN, (19890608), vol. 13, no. 246, Database accession no. (E - 769), & JP01047077 A 19890221 (TDK CORP) [X] 1,3,5-9 * abstract *
ExaminationEP0414499
by applicantEP0414499
 US5457419
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.