-
EP1115895
European procedure
Extract from the Register of European Patents
EP About this file: EP1115895
| EP1115895 - METHOD FOR TREATING, BY NITRIDING, A SILICON SUBSTRATE FOR FORMING A THIN INSULATING LAYER [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 26.09.2003 Database last updated on 03.09.2024 | Most recent event Tooltip | 26.09.2003 | No opposition filed within time limit | published on 12.11.2003 [2003/46] | Applicant(s) | For all designated states COMMISSARIAT A L'ENERGIE ATOMIQUE 31-33, rue de la Fédération 75752 Paris Cédex 15 / FR | For all designated states FRANCE TELECOM 6 Place d'Alleray 75015 Paris / FR | [N/P] |
| Former [2001/29] | For all designated states COMMISSARIAT A L'ENERGIE ATOMIQUE 31-33, rue de la Fédération 75752 Paris Cédex 15 / FR | ||
| For all designated states FRANCE TELECOM 6, Place d'Alleray 75015 Paris / FR | Inventor(s) | 01 /
MARTIN, François 8, rue Irvoy F-38000 Grenoble / FR | 02 /
BENSAHEL, Daniel 6, rue Colbert F-38000 Grenoble / FR | 03 /
HERNANDEZ, Caroline 1, rue Bayard F-38000 Grenoble / FR | 04 /
VALLIER, Laurent 2, chemin de Dhuy F-38240 Meylan / FR | [2001/29] | Representative(s) | Weber, Etienne Nicolas, et al BREVALEX 95 rue d'Amsterdam 75378 Paris Cedex 8 / FR | [N/P] |
| Former [2001/29] | Weber, Etienne Nicolas, et al c/o Société de Protection des Inventions, 3, rue du Docteur Lancereaux 75008 Paris / FR | Application number, filing date | 99943005.1 | 20.09.1999 | [2001/29] | WO1999FR02228 | Priority number, date | FR19980011746 | 21.09.1998 Original published format: FR 9811746 | [2001/29] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | WO0017412 | Date: | 30.03.2000 | Language: | FR | [2000/13] | Type: | A1 Application with search report | No.: | EP1115895 | Date: | 18.07.2001 | Language: | FR | The application published by WIPO in one of the EPO official languages on 30.03.2000 takes the place of the publication of the European patent application. | [2001/29] | Type: | B1 Patent specification | No.: | EP1115895 | Date: | 20.11.2002 | Language: | FR | [2002/47] | Search report(s) | International search report - published on: | EP | 30.03.2000 | Classification | IPC: | C23C8/28, C23C28/04 | [2001/29] | CPC: |
C23C28/044 (EP,US);
C23C8/28 (EP,US);
Y10T428/24926 (EP,US)
| Designated contracting states | DE, GB, IT [2002/47] |
| Former [2001/29] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | VERFAHREN ZUM NITRIEREN EINES SILIZIUM-SUBSTRATES ZUR ERZEUGUNG EINER ISOLATIONSBESCHICHTUNG | [2001/29] | English: | METHOD FOR TREATING, BY NITRIDING, A SILICON SUBSTRATE FOR FORMING A THIN INSULATING LAYER | [2001/29] | French: | PROCEDE DE TRAITEMENT, PAR NITRURATION, D'UN SUBSTRAT DE SILICIUM POUR LA FORMATION D'UNE COUCHE ISOLANTE MINCE | [2001/29] | Entry into regional phase | 22.02.2001 | National basic fee paid | 22.02.2001 | Designation fee(s) paid | 22.02.2001 | Examination fee paid | Examination procedure | 27.03.2000 | Request for preliminary examination filed International Preliminary Examining Authority: EP | 22.02.2001 | Examination requested [2001/29] | 19.07.2001 | Despatch of a communication from the examining division (Time limit: M04) | 12.10.2001 | Reply to a communication from the examining division | 14.02.2002 | Despatch of communication of intention to grant (Approval: Yes) | 27.05.2002 | Communication of intention to grant the patent | 01.08.2002 | Fee for grant paid | 01.08.2002 | Fee for publishing/printing paid | Opposition(s) | 21.08.2003 | No opposition filed within time limit [2003/46] | Fees paid | Renewal fee | 19.09.2001 | Renewal fee patent year 03 | 20.09.2002 | Renewal fee patent year 04 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [Y]EP0798769 (HEWLETT PACKARD CO [US]) [Y] 1 * page 3, column 3, line 52 - column 4, line 7 * * page 4, column 5, line 44 - line 58; claims 1,3,5 *; | [YA]EP0430030 (OKI ELECTRIC IND CO LTD [JP]) [Y] 1 * page 4, column 6, line 41 - line 55 * * page 6, column 9, line 5 - column 10, line 34; claims 1-5 * [A] 2; | [A]US5407870 (OKADA YOSHIO [US], et al) [A] 1,5,10 * claims 1,3,4,7 *; | [A]WO9827580 (SCOTT SPECIALTY GASES INC [US]) [A] 1,3 * claims 1,17 *; | [A]US5512519 (HWANG HYUNSANG [KR]) [A] 1,5,10 * column 2, line 32 - line 41; claim 1 *; | [A]US5674788 (WRISTERS DIRK J [US], et al) [A] 1 * claims 1,3,5 *; | [A]WO9003560 (SIEMENS AG [DE]) [A] 1 * claims 1,2 *; | [A]KR930002661B ; | [A]US4438157 (ROMANO-MORAN ROBERTO [US]) [A] 1,5-8,10,11 * claim 1 * | [A] - DATABASE WPI, 1, Derwent World Patents Index, vol. 93, no. 47, Database accession no. 93-375272, XP002104362 & KR930002661B B1 19930407 (GOLDSTAR ELECTRONIC CO) [A] 1 * abstract * |