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Extract from the Register of European Patents

EP About this file: EP1110233

EP1110233 - SCANNING ELECTRON BEAM MICROSCOPE [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  25.11.2016
Database last updated on 14.09.2024
Most recent event   Tooltip15.09.2017Lapse of the patent in a contracting statepublished on 18.10.2017  [2017/42]
Applicant(s)For all designated states
KLA-Tencor Corporation
160 Rio Robles
San Jose, CA 95134-1809 / US
[2016/03]
Former [2001/26]For all designated states
KLA-Tencor Corporation
160 Rio Robles
San Jose, CA 95134-1809 / US
Inventor(s)01 / MASNAGHETTI, Douglas, K.
1451 Corte De Rosa
San Jose, CA 95120 / US
02 / CONCINA, Stefano, E.
1332 Bonnet Court
San Jose, CA 95132 / US
03 / SUN, Stanley, S.
5106 Merano Court
Pleasanton, CA 94588 / US
04 / NG, Waiman
331 Penn Way
Los Gatos, CA 95032 / US
05 / ADLER, David, L.
6060 Guadalupe Mines Court
San Jose, CA 95120 / US
 [2001/26]
Representative(s)Keane, Paul Fachtna
FRKelly
27 Clyde Road
Dublin D04 F838 / IE
[N/P]
Former [2014/43]Keane, Paul Fachtna
FRKelly
27 Clyde Road
Dublin 4 / IE
Former [2012/08]Lukaszyk, Szymon, et al
Kancelaria Patentowa Lukaszyk ul. Glowackiego 8/6
40-062 Katowice / PL
Former [2012/07]Alton, Andrew, et al
Urquhart-Dykes & Lord LLP Tower North Central Merrion Way
Leeds LS2 8PA / GB
Former [2010/20]Gover, Richard Paul, et al
Urquhart-Dykes & Lord LLP Tower North Central Merrion Way
Leeds LS2 8PA / GB
Former [2001/26]Browne, Robin Forsythe, Dr.
Urquhart-Dykes & Lord Tower House Merrion Way
Leeds LS2 8PA West Yorkshire / GB
Application number, filing date99948130.202.09.1999
[2001/26]
WO1999US20384
Priority number, dateUS19980099050P03.09.1998         Original published format: US 99050 P
US1998014976708.09.1998         Original published format: US 149767
[2001/26]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO0014765
Date:16.03.2000
Language:EN
[2000/11]
Type: A1 Application with search report 
No.:EP1110233
Date:27.06.2001
Language:EN
The application published by WIPO in one of the EPO official languages on 16.03.2000 takes the place of the publication of the European patent application.
[2001/26]
Type: B1 Patent specification 
No.:EP1110233
Date:20.01.2016
Language:EN
[2016/03]
Search report(s)International search report - published on:EP16.03.2000
ClassificationIPC:H01J37/29, H01J37/28
[2001/26]
CPC:
H01J37/28 (EP,US); H01J2237/004 (EP,US); H01J2237/2817 (EP,US)
Designated contracting statesDE,   FR,   GB [2016/03]
Former [2004/22]DE,  FR,  GB 
Former [2001/26]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:RASTERELEKTRONENMIKROSKOP[2001/26]
English:SCANNING ELECTRON BEAM MICROSCOPE[2001/26]
French:MICROSCOPE A BALAYAGE PAR FAISCEAU ELECTRONIQUE[2001/26]
Entry into regional phase08.03.2001National basic fee paid 
08.03.2001Designation fee(s) paid 
08.03.2001Examination fee paid 
Examination procedure30.03.2000Request for preliminary examination filed
International Preliminary Examining Authority: EP
08.03.2001Examination requested  [2001/26]
07.09.2007Despatch of a communication from the examining division (Time limit: M04)
28.02.2008Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time
07.05.2008Reply to a communication from the examining division
18.01.2010Despatch of a communication from the examining division (Time limit: M06)
14.07.2010Reply to a communication from the examining division
22.04.2015Cancellation of oral proceeding that was planned for 23.04.2015
23.04.2015Date of oral proceedings (cancelled)
01.06.2015Communication of intention to grant the patent
01.10.2015Disapproval of the communication of intention to grant the patent by the applicant or resumption of examination proceedings by the EPO
01.10.2015Fee for grant paid
01.10.2015Fee for publishing/printing paid
02.11.2015Information about intention to grant a patent
02.11.2015Receipt of the translation of the claim(s)
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  07.09.2007
Opposition(s)21.10.2016No opposition filed within time limit [2016/52]
Request for further processing for:The application is deemed to be withdrawn due to failure to reply to the examination report
07.05.2008Request for further processing filed
07.05.2008Full payment received (date of receipt of payment)
Fees paidRenewal fee
26.09.2001Renewal fee patent year 03
23.09.2002Renewal fee patent year 04
24.09.2003Renewal fee patent year 05
23.09.2004Renewal fee patent year 06
21.09.2005Renewal fee patent year 07
27.09.2006Renewal fee patent year 08
26.09.2007Renewal fee patent year 09
25.09.2008Renewal fee patent year 10
25.09.2009Renewal fee patent year 11
27.09.2010Renewal fee patent year 12
26.09.2011Renewal fee patent year 13
25.09.2012Renewal fee patent year 14
27.09.2013Renewal fee patent year 15
29.09.2014Renewal fee patent year 16
28.09.2015Renewal fee patent year 17
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Patent Court
See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipGB02.09.2016
FR30.09.2016
[2017/42]
Cited inInternational search[A]WO9832153  (KLA TENCOR CORP [US]) [A] 1-27 * abstract * * page 1, lines 28-35 * * page 12, lines 21-27 * * claim 1 *
ExaminationUS5412209
    - HIDEO NAKAGAWA ET AL, "A NOVEL HIGH-RESOLUTION SCANNING ELECTRON MICROSCOPE FOR THE SURFACE ANALYSIS OF HIGH-ASPECT-RATIO THREE-DIMENSIONAL STRUCTURES", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, (19910901), vol. 30, no. 9A PART 01, doi:10.1143/JJAP.30.2112, ISSN 0021-4922, pages 2112 - 2117, XP000263177

DOI:   http://dx.doi.org/10.1143/JJAP.30.2112
    - LEE K Y ET AL, "HIGH ASPECT RATIO ALIGNED MULTILAYER MICROSTRUCTURE FABRICATION", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AVS / AIP, MELVILLE, NEW YORK, NY, US, (19941101), vol. 12, no. 6, doi:10.1116/1.587525, ISSN 1071-1023, pages 3425 - 3430, XP000497168

DOI:   http://dx.doi.org/10.1116/1.587525
    - NAKAMAE K ET AL, "Electron beam assisted high aspect ratio, submicrometre etching of passivation SiO2 on large-scale integrated circuits", JOURNAL OF PHYSICS D: APPLIED PHYSICS, INSTITUTE OF PHYSICS PUBLISHING LTD, GB, (19921214), vol. 25, no. 12, doi:10.1088/0022-3727/25/12/002, ISSN 0022-3727, pages 1681 - 1686, XP020014175

DOI:   http://dx.doi.org/10.1088/0022-3727/25/12/002
by applicantWO9832153
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.