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Extract from the Register of European Patents

EP About this file: EP1105802

EP1105802 - METHOD FOR REPAIRING FAULTY STORAGE CELLS OF AN INTEGRATED MEMORY [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  28.03.2003
Database last updated on 22.08.2024
Most recent event   Tooltip28.03.2008Lapse of the patent in a contracting state
New state(s): IT
published on 30.04.2008  [2008/18]
Applicant(s)For all designated states
Infineon Technologies AG
St.-Martin-Strasse 53
81669 München / DE
[2001/24]
Inventor(s)01 / SCHAMBERGER, Florian
Nonn 39
D-83435 Bad Reichenhall / DE
02 / SCHNEIDER, Helmut
Siegmund-Schacky-Str. 20
D-80993 München / DE
 [2001/24]
Representative(s)Epping - Hermann - Fischer
Patentanwaltsgesellschaft mbH
Schlossschmidstrasse 5
80639 München / DE
[N/P]
Former [2001/24]Epping Hermann & Fischer
Ridlerstrasse 55
80339 München / DE
Application number, filing date99952423.417.08.1999
[2001/24]
WO1999DE02571
Priority number, dateDE199813886126.08.1998         Original published format: DE 19838861
[2001/24]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report
No.:WO0013087
Date:09.03.2000
Language:DE
[2000/10]
Type: A1 Application with search report 
No.:EP1105802
Date:13.06.2001
Language:DE
The application published by WIPO in one of the EPO official languages on 09.03.2000 takes the place of the publication of the European patent application.
[2001/24]
Type: B1 Patent specification 
No.:EP1105802
Date:22.05.2002
Language:DE
[2002/21]
Search report(s)International search report - published on:EP09.03.2000
ClassificationIPC:G06F11/20
[2001/24]
CPC:
G11C29/72 (EP,US); G06F11/20 (KR)
Designated contracting statesDE,   FR,   GB,   IE,   IT [2002/21]
Former [2001/24]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:VERFAHREN ZUR REPARATUR VON DEFEKTEN SPEICHERZELLEN EINES INTEGRIERTEN SPEICHERS[2001/24]
English:METHOD FOR REPAIRING FAULTY STORAGE CELLS OF AN INTEGRATED MEMORY[2001/24]
French:PROCEDE DE REPARATION DE CELLULES DEFECTUEUSES D'UNE MEMOIRE INTEGREE[2001/24]
Entry into regional phase15.01.2001National basic fee paid 
15.01.2001Designation fee(s) paid 
15.01.2001Examination fee paid 
Examination procedure08.03.2000Request for preliminary examination filed
International Preliminary Examining Authority: EP
15.01.2001Examination requested  [2001/24]
19.07.2001Despatch of communication of intention to grant (Approval: Yes)
19.11.2001Communication of intention to grant the patent
19.02.2002Fee for grant paid
19.02.2002Fee for publishing/printing paid
Opposition(s)25.02.2003No opposition filed within time limit [2003/20]
Fees paidRenewal fee
21.08.2001Renewal fee patent year 03
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipIE22.05.2002
IT22.05.2002
[2008/18]
Former [2003/17]IE22.05.2002
Cited inInternational search[A]EP0140595  (EATON CORP [US]) [A] 1 * page 24, line 7 - page 33, line 20 *;
 [A]FR2699301  (SGS THOMSON MICROELECTRONICS [FR], et al) [A] 1 * page 14, line 12 - page 16, line 22; figure 2 *;
 [A]DE19736250  (ADVANTEST CORP [JP]) [A] 1 * page 3, line 49 - page 5, line 43; figures 9-11 *;
 [A]  - DAY J R, "A FAULT-DRIVEN, COMPREHENSIVE REDUNDANCY ALGORITHM", IEEE DESIGN & TEST OF COMPUTERS,US,IEEE COMPUTERS SOCIETY. LOS ALAMITOS, (19850601), vol. 2, no. 3, ISSN 0740-7475, pages 35 - 44, XP000744056 [A] 1 * page 39, column 3, line 12 - page 42, column 1, line 9; figures 3A-3F *
 [A]  - BOSSE G P, "HIGH SPEED REDUNDANCY PROCESSOR", PROCEEDINGS OF THE INTERNATIONAL TEST CONFERENCE,US,SILVER SPRING, IEEE COMP. SOC. PRESS, (1984), vol. SYMP. 1984, pages 282 - 286, XP000746695 [A] 1 * page 284, column 1, line 44 - page 285, column 1, line 49; figures 1,2 *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.