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Extract from the Register of European Patents

EP About this file: EP1043763

EP1043763 - VAPOR GROWTH APPARATUS FOR SEMICONDUCTOR WAFERS WITH DOPANT GAS FEED ASSEMBLY [Right-click to bookmark this link]
Former [2000/41]SEMICONDUCTOR WAFER AND VAPOR GROWTH APPARATUS
[2010/26]
StatusNo opposition filed within time limit
Status updated on  11.11.2011
Database last updated on 16.09.2024
Most recent event   Tooltip16.12.2011Lapse of the patent in a contracting statepublished on 18.01.2012  [2012/03]
Applicant(s)For all designated states
Shin-Etsu Handotai Co., Ltd.
6-2, Ohtemachi 2-chome Chiyoda-ku
Tokyo / JP
[2009/17]
Former [2000/41]For all designated states
Shin-Etsu Handotai Co., Ltd
4-2 Marunouchi 1-chome, Chiyoda-ku
Tokyo 100-0005 / JP
Inventor(s)01 / OSE, Hiroki c/o Shin-Etsu Handotai Co., Ltd.
Isobe Plant, 2-13-1, Isobe
Annaka-shi, Gumma 379-0196 / JP
 [2011/01]
Former [2000/41]01 / OSE, Hiroki Shin-Etsu Handotai Co., Ltd.
Isobe Plant 2-13-1, Isobe
Annaka-shi, Gumma 379-0196 / JP
Representative(s)Merkle, Gebhard, et al
Ter Meer Steinmeister & Partner
Patentanwälte mbB
Mauerkircherstrasse 45
81679 München / DE
[N/P]
Former [2000/41]Merkle, Gebhard, et al
TER MEER STEINMEISTER & PARTNER GbR, Patentanwälte, Mauerkircherstrasse 45
81679 München / DE
Application number, filing date99952798.928.10.1999
[2000/41]
WO1999JP05968
Priority number, dateJP1998032603429.10.1998         Original published format: JP 32603498
[2000/41]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO0026948
Date:11.05.2000
Language:EN
[2000/19]
Type: A1 Application with search report 
No.:EP1043763
Date:11.10.2000
Language:EN
The application published by WIPO in one of the EPO official languages on 11.05.2000 takes the place of the publication of the European patent application.
[2000/41]
Type: B1 Patent specification 
No.:EP1043763
Date:05.01.2011
Language:EN
[2011/01]
Search report(s)International search report - published on:JP11.05.2000
(Supplementary) European search report - dispatched on:EP05.07.2006
ClassificationIPC:H01L21/205, H01L21/22, C30B23/02, C30B23/04, C30B23/06, C30B23/08, C23C16/44
[2000/41]
CPC:
C23C16/45563 (EP,US); C23C16/45574 (EP,KR,US); C23C16/45561 (EP,KR,US);
C30B25/14 (EP,KR,US); C30B29/06 (EP,KR,US); H01L21/02381 (EP,KR,US);
H01L21/02579 (EP,KR,US); H01L21/0262 (EP,KR,US); H01L21/02532 (EP,US);
Y10T428/12528 (EP,US); Y10T428/21 (EP,US); Y10T428/31 (EP,US) (-)
Designated contracting statesDE,   FR,   GB,   IT [2004/20]
Former [2000/41]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:VORRICHTUNG ZUR GASPHASENABSCHEIDUNG FÜR HALBLEITERSCHEIBEN MIT DOTIERGAS-ZUFUHREINRICHTUNG[2010/34]
English:VAPOR GROWTH APPARATUS FOR SEMICONDUCTOR WAFERS WITH DOPANT GAS FEED ASSEMBLY[2010/26]
French:DISPOSITIF DE CROISSANCE EN PHASE VAPEUR POUR PLAQUETTES SEMICONDUCTRICES AVEC SYSTEME D'ALIMENTATION EN GAZ DOPANT[2010/26]
Former [2000/41]HALBLEITERSCHEIBE UND ABSCHEIDUNGSAPPARAT FÜR ABSCHEIDUNGEN AUS DER GAS-PHASE
Former [2000/41]SEMICONDUCTOR WAFER AND VAPOR GROWTH APPARATUS
Former [2000/41]PLAQUETTE A SEMI-CONDUCTEUR ET DISPOSITIF DE CRISTALLISATION EN PHASE VAPEUR
Entry into regional phase27.06.2000Translation filed 
28.06.2000National basic fee paid 
28.06.2000Search fee paid 
28.06.2000Designation fee(s) paid 
28.06.2000Examination fee paid 
Examination procedure28.06.2000Examination requested  [2000/41]
16.03.2009Despatch of a communication from the examining division (Time limit: M04)
07.07.2009Reply to a communication from the examining division
04.08.2010Communication of intention to grant the patent
22.11.2010Fee for grant paid
22.11.2010Fee for publishing/printing paid
Opposition(s)06.10.2011No opposition filed within time limit [2011/50]
Fees paidRenewal fee
18.10.2001Renewal fee patent year 03
15.10.2002Renewal fee patent year 04
15.10.2003Renewal fee patent year 05
18.10.2004Renewal fee patent year 06
20.10.2005Renewal fee patent year 07
17.10.2006Renewal fee patent year 08
19.10.2007Renewal fee patent year 09
23.10.2008Renewal fee patent year 10
22.10.2009Renewal fee patent year 11
25.10.2010Renewal fee patent year 12
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipIT05.01.2011
[2012/03]
Documents cited:Search[YA]JPS61101020  ;
 [PX]JPH11238688  ;
 [XY]EP0637058  (APPLIED MATERIALS INC [US]) [X] 7,9 * column 1, line 18 - column 2, line 5; figure 1 * * column 6, line 6 - line 20; figure 6 * * column 7, line 23 - line 52; figure 7 * * column 7, line 53 - column 8, line 12; figure 8 * [Y] 8,11;
 [YA]US5487358  (OHTA YUTAKA [JP], et al) [Y] 1-6,11 * column 1, line 15 - line 33; figure 7 * * column 4, line 26 - column 5, line 19; figure 1 * * column 5, line 35 - line 63 * * column 6, line 15 - line 42; figures 5,6 * * column 6, line 54 - line 59 * [A] 7-9;
 [Y]EP0784106  (TOSHIBA CERAMICS CO [JP], et al) [Y] 1-6 * examples 2-5; table 1 *;
 [XY]DE19801439  (SEH AMERICA INC [US]) [X] 7,9 * page 2, line 3 - line 6 * * page 2, line 47 - line 67 * * page 3, line 6 - line 18 * * page 3, line 47 - page 4, line 6; figure 1 * * page 5, line 1 - line 28; figure 4 * * page 6, line 48 - line 66; figure 7 * [Y] 1-6,8,11
 [YA]  - PATENT ABSTRACTS OF JAPAN, (19860926), vol. 010, no. 283, Database accession no. (E - 440), & JP61101020 A 19860519 (HITACHI LTD) [Y] 8 * abstract * [A] 7,9-11
 [PX]  - PATENT ABSTRACTS OF JAPAN, (19991130), vol. 1999, no. 13, & JP11238688 A 19990831 (SHIN ETSU HANDOTAI CO LTD) [PX] 1-6 * abstract * * paragraph [0033] - paragraph [0035] * * paragraph [0032] - paragraph [0035] *
International search[A]JPS5936927  (HITACHI LTD);
 [A]JPH05226263  (NEC CORP);
 [A]EP0784106  (TOSHIBA CERAMICS CO [JP], et al);
 [A]US5755878  (HABUKA HITOSHI [JP], et al)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.