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Extract from the Register of European Patents

EP About this file: EP1038995

EP1038995 - Process and apparatus for producing single crystals [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  14.06.2002
Database last updated on 20.09.2024
Most recent event   Tooltip01.08.2008Change - applicantpublished on 03.09.2008  [2008/36]
Applicant(s)For all designated states
Freiberger Compound Materials GmbH
Am Junger Löwe Schacht 5
09599 Freiberg / DE
For all designated states
Forschungszentrum Jülich GmbH
52425 Jülich / DE
[N/P]
Former [2008/36]For all designated states
Freiberger Compound Materials GmbH
Am Junger Löwe Schacht 5
09599 Freiberg / DE
For all designated states
Forschungszentrum Jülich GmbH
52425 Jülich / DE
Former [2002/28]For all designated states
Freiberger Compound Materials GmbH
Am Junger Löwe Schacht 5
09599 Freiberg / DE
For all designated states
Forschungszentrum Jülich GmbH
52425 Jülich / DE
Former [2001/03]For all designated states
Freiberger Compound Materials GmbH
Am Junger Löwe Schacht 5
09599 Freiberg / DE
For all designated states
FORSCHUNGSZENTRUM JÜLICH GMBH
52425 Jülich / DE
Former [2000/39]For all designated states
Freiberger Compound Materials GmbH
Am Junger Löwe Schacht 5
09599 Freiberg / DE
Inventor(s)01 / Sonnenberg, Klaus
Taubenforst 3
52382 Niederzier / DE
02 / Küssel, Eckhard
Fritz Pleystrasse 28
52353 Düren / DE
03 / Bünger, Thomas
Klopstockstrasse 3
09131 Chemnitz / DE
04 / Flade, Thilo
Dörnerzaunstrasse 11
09599 Freiberg / DE
05 / Weinert, Berndt
Turnerstrasse 9
09599 Freiberg / DE
[2000/39]
Representative(s)Prüfer, Lutz H., et al
PRÜFER & PARTNER GbR
Patentanwälte
Harthauser Strasse 25d
81545 München / DE
[N/P]
Former [2000/39]Prüfer, Lutz H., Dipl.-Phys., et al
PRÜFER & PARTNER GbR, Patentanwälte, Harthauser Strasse 25d
81545 München / DE
Application number, filing date00105206.713.03.2000
[2000/39]
Priority number, dateDE199911248619.03.1999         Original published format: DE 19912486
[2000/39]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report 
No.:EP1038995
Date:27.09.2000
Language:DE
[2000/39]
Type: B1 Patent specification 
No.:EP1038995
Date:08.08.2001
Language:DE
[2001/32]
Search report(s)(Supplementary) European search report - dispatched on:EP09.06.2000
ClassificationIPC:C30B11/00, C30B11/14, C30B29/42, C30B29/40
[2000/39]
CPC:
C30B29/42 (EP,US); C30B11/14 (EP,US); C30B29/40 (EP,US)
Designated contracting statesBE,   DE,   FR,   GB,   IT,   NL [2001/24]
Former [2000/39]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:Verfahren und Vorrichtung zur Herstellung von Einkristallen[2000/39]
English:Process and apparatus for producing single crystals[2000/39]
French:Procédé et appareillage pour la production des monocristaux[2000/39]
Examination procedure13.03.2000Request for accelerated examination filed
14.04.2000Decision about request for accelerated examination - accepted: Yes
19.07.2000Examination requested  [2000/39]
26.09.2000Despatch of communication of intention to grant (Approval: Yes)
13.12.2000Communication of intention to grant the patent
27.02.2001Fee for grant paid
27.02.2001Fee for publishing/printing paid
Opposition(s)10.05.2002No opposition filed within time limit [2002/31]
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[A]JPH06298588  ;
 [AD]EP0671490  (SUMITOMO ELECTRIC INDUSTRIES [JP]) [AD] 1,8,13 * figure 1; claim 1 *;
 [AD]EP0744476  (SUMITOMO ELECTRIC INDUSTRIES [JP]) [AD] 1,8,13 * figure 10; claim 8 *;
 [A]  - PATENT ABSTRACTS OF JAPAN, (19950228), vol. 1995, no. 01, & JP06298588 A 19941025 (DOWA MINING CO LTD) [A] * abstract *
 [A]  - AMON J ET AL, "Analysis of types of residual dislocations in the VGF growth of GaAs with extremely low dislocation density (EPD@?1000cm) - A Tutorial Approach, X-Ray Topographic Techniques for Electronic Materials Characterization", JOURNAL OF CRYSTAL GROWTH,NL,NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, (199903), vol. 198-199, ISSN 0022-0248, pages 367 - 373, XP004170881

DOI:   http://dx.doi.org/10.1016/S0022-0248(98)01219-6
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.