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Extract from the Register of European Patents

EP About this file: EP1041577

EP1041577 - Non-volatile semiconductor memory device and data erase controlling method for use therein [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  20.11.2009
Database last updated on 20.09.2024
Most recent event   Tooltip20.11.2009No opposition filed within time limitpublished on 23.12.2009  [2009/52]
Applicant(s)For all designated states
Kabushiki Kaisha Toshiba
72, Horikawa-cho, Saiwai-ku Kawasaki-shi
Kanagawa-ken 210-8572 / JP
[N/P]
Former [2009/03]For all designated states
KABUSHIKI KAISHA TOSHIBA
72, Horikawa-cho, Saiwai-ku Kawasaki-shi
Kanagawa-ken 210-8572 / JP
Former [2000/40]For all designated states
KABUSHIKI KAISHA TOSHIBA
72, Horikawa-cho, Saiwai-ku
Kawasaki-shi, Kanagawa-ken 210-8572 / JP
Inventor(s)01 / Yamamura, Toshio
5-15-3-503, Youkoudai, Isogo-ku
Yokohama-shi, Kanagawa-ken / JP
02 / Sugiura, Yoshihisa
1174-1-2-C, Koshigoe
Kamakura-shi, Kanagawa-ken / JP
03 / Kanazawa, Kazuhisa
817-3, Kotsuka
Fujisawa-shi, Kanagawa-ken / JP
04 / Sakui, Koji
4-13-14-201, Kyodo, Setagaya-ku
Tokyo-To / JP
05 / Nakamura, Hiroshi
304, Creare-Toshiba-Shinyurigaoka, 2491 Ouzenji
Asao-ku, Kawasaki-shi, Kanagawa-ken / JP
[2000/40]
Representative(s)Hoffmann Eitle
Patent- und Rechtsanwälte PartmbB
Arabellastrasse 30
81925 München / DE
[N/P]
Former [2000/40]HOFFMANN - EITLE
Patent- und Rechtsanwälte Arabellastrasse 4
81925 München / DE
Application number, filing date00107016.831.03.2000
[2000/40]
Priority number, dateJP1999009700302.04.1999         Original published format: JP 9700399
JP1999018224828.06.1999         Original published format: JP 18224899
[2000/40]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1041577
Date:04.10.2000
Language:EN
[2000/40]
Type: A3 Search report 
No.:EP1041577
Date:11.10.2000
[2000/41]
Type: B1 Patent specification 
No.:EP1041577
Date:14.01.2009
Language:EN
[2009/03]
Search report(s)(Supplementary) European search report - dispatched on:EP28.08.2000
ClassificationIPC:G11C16/02
[2000/40]
CPC:
G11C16/3445 (EP,US); G11C16/06 (KR); G11C16/0483 (EP,US);
G11C16/16 (EP,US); G11C16/344 (EP,US)
Designated contracting statesDE,   FR,   GB [2001/26]
Former [2000/40]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:Nichtflüchtige Halbleiter-Speichereinrichtung und Methode zur Datenlöschkontrolle[2000/40]
English:Non-volatile semiconductor memory device and data erase controlling method for use therein[2000/40]
French:Mémoire à semi-conducteurs non-volatile avec procédé de contrôle d'effaçage des données[2000/40]
Examination procedure05.04.2000Examination requested  [2000/40]
23.10.2006Despatch of a communication from the examining division (Time limit: M04)
28.02.2007Reply to a communication from the examining division
25.06.2008Communication of intention to grant the patent
27.10.2008Fee for grant paid
27.10.2008Fee for publishing/printing paid
Opposition(s)15.10.2009No opposition filed within time limit [2009/52]
Fees paidRenewal fee
13.03.2002Renewal fee patent year 03
11.03.2003Renewal fee patent year 04
15.03.2004Renewal fee patent year 05
14.03.2005Renewal fee patent year 06
09.03.2006Renewal fee patent year 07
14.03.2007Renewal fee patent year 08
14.03.2008Renewal fee patent year 09
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Documents cited:Search[A]EP0405140  (TEXAS INSTRUMENTS INC [US]) [A] 1,7,12,15-17 * abstract * * page 1, line 1 - page 2, line 12; figure 1E; claim 1 *;
 [A]DE4207934  (TOSHIBA KAWASAKI KK [JP]) [A] 1,7,12,15-17 * abstract * * page 2, line 1 - page 3, line 18; figure 1; claims 1,2 *;
 [A]EP0662692  (TOSHIBA KK [JP]) [A] 1,7,12,15-17 * abstract * * column 1, line 1 - line 33 ** column 15, line 15 - column 17, line 14; figure 1; claim 1 *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.