EP1071120 - Method for providing pulsed plasma during a portion of a semiconductor wafer process [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 04.02.2005 Database last updated on 20.12.2024 | Most recent event Tooltip | 04.02.2005 | Withdrawal of application | published on 23.03.2005 [2005/12] | Applicant(s) | For all designated states Applied Materials, Inc. P.O. Box 450A Santa Clara, California 95052 / US | [N/P] |
Former [2001/04] | For all designated states Applied Materials, Inc. P.O. Box 450A Santa Clara, California 95052 / US | Inventor(s) | 01 /
Paterson, Alex 1035 Coleman Road apt 7207 San Jose, CA 95123 / US | 02 /
Yamartino, John M. 385 Waverly Street Palo Alto, CA / US | 03 /
Loewenhardt, Peter K. 1862 Rosswood Dr. San Jose, CA / US | 04 /
Zawalski, Wade 539 27th Street San Francisco, CA 94131 / US | [2001/15] |
Former [2001/04] | 01 /
Paterson, Alex 5355 Wong Court, Apt. 332 San Jose, CA 95123 / US | ||
02 /
Yamartino, John M. 385 Waverly Street Palo Alto, CA / US | |||
03 /
Loewenhardt, Peter K. 1862 Rosswood Dr. San Jose, CA / US | |||
04 /
Zawalski, Wade 539 27th Street San Francisco, CA 94131 / US | Representative(s) | Zimmermann, Gerd Heinrich, et al Zimmermann & Partner Patentanwälte mbB Postfach 330 920 80069 München / DE | [N/P] |
Former [2001/04] | Zimmermann, Gerd Heinrich, et al Zimmermann & Partner, P.O. Box 33 09 20 80069 München / DE | Application number, filing date | 00115860.9 | 24.07.2000 | [2001/04] | Priority number, date | US19990360883 | 23.07.1999 Original published format: US 360883 | [2001/04] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1071120 | Date: | 24.01.2001 | Language: | EN | [2001/04] | Type: | A3 Search report | No.: | EP1071120 | Date: | 11.04.2001 | [2001/15] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 22.02.2001 | Classification | IPC: | H01L21/3065, H01J37/32, H01L21/3213 | [2001/15] | CPC: |
H01J37/321 (EP,US);
H01L21/3065 (EP,KR,US);
H01L21/32136 (EP,US);
H01L21/32137 (EP,US);
H01J2237/0206 (EP,US)
|
Former IPC [2001/04] | H01L21/3065, H01J37/32 | Designated contracting states | GB [2002/01] |
Former [2001/04] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Verfahren zur Behandlunhg eines halbleitenden Wafers mit einem zeitweiligem gepulsten Plasma | [2001/04] | English: | Method for providing pulsed plasma during a portion of a semiconductor wafer process | [2001/04] | French: | Procédé de traitement d'un substrate semiconducteur avec un plasma pulsé temporaire | [2001/04] | Examination procedure | 18.06.2001 | Examination requested [2001/33] | 28.01.2005 | Application withdrawn by applicant [2005/12] | Fees paid | Renewal fee | 30.07.2002 | Renewal fee patent year 03 | 04.07.2003 | Renewal fee patent year 04 | Penalty fee | Additional fee for renewal fee | 31.07.2004 | 05   M06   Not yet paid |
Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]US4889588 (FIOR GIANNI O [US]) [Y] 3-5 * the whole document *; | [XY]US5352324 (GOTOH YASUSHI [JP], et al) [X] 1,2,6-8,15-19,22-33 * the whole document * [Y] 3-5; | [X]EP0878842 (APPLIED MATERIALS INC [US]) [X] 22-35 * the whole document *; | [A] - MARUYAMA T ET AL, "REDUCTION OF CHARGE BUILD-UP WITH PULSE-MODULATED BIAS IN PULSED ELECTRON CYCLOTRON RESONANCE PLASMA", JAPANESE JOURNAL OF APPLIED PHYSICS,JP,PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, (199804), vol. 37, no. 4B, ISSN 0021-4922, pages 2306 - 2310, XP000861729 [A] 1-10,15-17,29-33 * the whole document * DOI: http://dx.doi.org/10.1143/JJAP.37.2306 | [A] - IKEDA Y ET AL, "TOP-PECVD: A NEW CONFORMAL PLASMA ENHANCED CVD TECHNOLOGY USING TEOS, OZONE AND PULSE-MODULATED RF PLASMA", SAN FRANCISCO, DEC. 13 - 16, 1992,NEW YORK, IEEE,US, (19921213), ISBN 0-7803-0818-2, pages 289 - 292, XP000687431 [A] 1,11,17,29-33 * the whole document * |