EP1113501 - Power MOSFET having a trench gate electrode [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 01.06.2012 Database last updated on 09.09.2024 | Most recent event Tooltip | 17.11.2017 | Lapse of the patent in a contracting state | published on 20.12.2017 [2017/51] | Applicant(s) | For all designated states SILICONIX Incorporated 2201 Laurelwood Road, M/S 38 Santa Clara, California 95054-0951 / US | [2011/30] |
Former [2001/27] | For all designated states SILICONIX INCORPORATED 2201 Laurelwood Road, M/S 38 Santa Clara, California 95054-0951 / US | Inventor(s) | 01 /
Bhalla, Anup 2322 Homestead Road, Apt. No. 1 Santa Clara, CA 95050 / US | 02 /
Korec, Jacek, Dr. 6859 Almaden Road San Jose, CA 95120 / US | [2011/30] |
Former [2001/27] | 01 /
Bhalla, Anup 2322 Homestead Road, Apt. 1 Santa Clara, CA 95050 / US | ||
02 /
Korec, Jacek, Dr. 6859 Almaden Road San Jose, CA 95120 / US | Representative(s) | Richards, John, et al Ladas & Parry LLP Temple Chambers 3-7 Temple Avenue London EC4Y 0DA / GB | [N/P] |
Former [2012/24] | Richards, John, et al Ladas & Parry LLP Dachauerstrasse 37 80335 München / DE | ||
Former [2003/45] | Ebner von Eschenbach, Jennifer Ladas & Parry, Dachauerstrasse 37 80335 München / DE | ||
Former [2002/35] | Manitz, Finsterwald & Partner Postfach 31 02 20 80102 München / DE | ||
Former [2001/27] | Kolb, Georg DaimlerChrysler AG, Postfach 35 35 74025 Heilbronn / DE | Application number, filing date | 00128393.6 | 22.12.2000 | [2001/27] | Priority number, date | US19990476320 | 30.12.1999 Original published format: US 476320 | [2001/27] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1113501 | Date: | 04.07.2001 | Language: | EN | [2001/27] | Type: | A3 Search report | No.: | EP1113501 | Date: | 07.07.2004 | [2004/28] | Type: | B1 Patent specification | No.: | EP1113501 | Date: | 27.07.2011 | Language: | EN | [2011/30] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 17.05.2004 | Classification | IPC: | H01L29/78, // H01L29/08, H01L29/423, H01L29/06, H01L29/10, H01L29/49 | [2010/50] | CPC: |
H01L29/7813 (EP,US);
H01L29/0878 (EP,US);
H01L29/1095 (EP,US);
H01L29/66734 (EP,US);
H01L29/0696 (EP,US);
H01L29/4236 (EP,US);
|
Former IPC [2004/11] | H01L29/78 | ||
Former IPC [2001/27] | H01L29/78, H01L29/36, H01L29/423, H01L29/49 | Designated contracting states | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR [2001/27] | Title | German: | Leistungs-MOSFET mit einer Graben-Gateelektrode | [2001/27] | English: | Power MOSFET having a trench gate electrode | [2001/27] | French: | MOSFET de puissance à électrode de grille en tranchée | [2001/27] | Examination procedure | 28.10.2004 | Examination requested [2004/53] | 15.12.2006 | Despatch of a communication from the examining division (Time limit: M06) | 20.04.2007 | Reply to a communication from the examining division | 16.10.2007 | Despatch of a communication from the examining division (Time limit: M06) | 18.03.2008 | Reply to a communication from the examining division | 22.10.2008 | Despatch of a communication from the examining division (Time limit: M04) | 05.02.2009 | Reply to a communication from the examining division | 12.04.2010 | Despatch of a communication from the examining division (Time limit: M04) | 13.08.2010 | Reply to a communication from the examining division | 14.01.2011 | Communication of intention to grant the patent | 06.05.2011 | Fee for grant paid | 06.05.2011 | Fee for publishing/printing paid | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 15.12.2006 | Opposition(s) | 02.05.2012 | No opposition filed within time limit [2012/27] | Fees paid | Renewal fee | 28.11.2002 | Renewal fee patent year 03 | 29.12.2003 | Renewal fee patent year 04 | 23.12.2004 | Renewal fee patent year 05 | 27.12.2005 | Renewal fee patent year 06 | 27.12.2006 | Renewal fee patent year 07 | 24.12.2007 | Renewal fee patent year 08 | 24.12.2008 | Renewal fee patent year 09 | 28.12.2009 | Renewal fee patent year 10 | 27.12.2010 | Renewal fee patent year 11 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | AT | 27.07.2011 | BE | 27.07.2011 | CY | 27.07.2011 | DK | 27.07.2011 | FI | 27.07.2011 | NL | 27.07.2011 | SE | 27.07.2011 | TR | 27.07.2011 | GR | 28.10.2011 | ES | 07.11.2011 | PT | 28.11.2011 | IE | 22.12.2011 | LU | 22.12.2011 | CH | 31.12.2011 | LI | 31.12.2011 | MC | 31.12.2011 | [2017/51] |
Former [2013/44] | AT | 27.07.2011 | |
BE | 27.07.2011 | ||
CY | 27.07.2011 | ||
DK | 27.07.2011 | ||
FI | 27.07.2011 | ||
NL | 27.07.2011 | ||
SE | 27.07.2011 | ||
TR | 27.07.2011 | ||
GR | 28.10.2011 | ||
ES | 07.11.2011 | ||
PT | 28.11.2011 | ||
IE | 22.12.2011 | ||
LU | 22.12.2011 | ||
CH | 31.12.2011 | ||
LI | 31.12.2011 | ||
MC | 31.12.2011 | ||
Former [2013/25] | AT | 27.07.2011 | |
BE | 27.07.2011 | ||
CY | 27.07.2011 | ||
DK | 27.07.2011 | ||
FI | 27.07.2011 | ||
NL | 27.07.2011 | ||
SE | 27.07.2011 | ||
GR | 28.10.2011 | ||
ES | 07.11.2011 | ||
PT | 28.11.2011 | ||
IE | 22.12.2011 | ||
LU | 22.12.2011 | ||
CH | 31.12.2011 | ||
LI | 31.12.2011 | ||
MC | 31.12.2011 | ||
Former [2013/22] | AT | 27.07.2011 | |
BE | 27.07.2011 | ||
CY | 27.07.2011 | ||
DK | 27.07.2011 | ||
FI | 27.07.2011 | ||
NL | 27.07.2011 | ||
SE | 27.07.2011 | ||
GR | 28.10.2011 | ||
ES | 07.11.2011 | ||
PT | 28.11.2011 | ||
IE | 22.12.2011 | ||
CH | 31.12.2011 | ||
LI | 31.12.2011 | ||
MC | 31.12.2011 | ||
Former [2012/49] | AT | 27.07.2011 | |
BE | 27.07.2011 | ||
CY | 27.07.2011 | ||
DK | 27.07.2011 | ||
FI | 27.07.2011 | ||
NL | 27.07.2011 | ||
SE | 27.07.2011 | ||
GR | 28.10.2011 | ||
PT | 28.11.2011 | ||
IE | 22.12.2011 | ||
CH | 31.12.2011 | ||
LI | 31.12.2011 | ||
MC | 31.12.2011 | ||
Former [2012/47] | AT | 27.07.2011 | |
BE | 27.07.2011 | ||
CY | 27.07.2011 | ||
DK | 27.07.2011 | ||
FI | 27.07.2011 | ||
NL | 27.07.2011 | ||
SE | 27.07.2011 | ||
GR | 28.10.2011 | ||
PT | 28.11.2011 | ||
IE | 22.12.2011 | ||
MC | 31.12.2011 | ||
Former [2012/33] | AT | 27.07.2011 | |
BE | 27.07.2011 | ||
CY | 27.07.2011 | ||
DK | 27.07.2011 | ||
FI | 27.07.2011 | ||
NL | 27.07.2011 | ||
SE | 27.07.2011 | ||
GR | 28.10.2011 | ||
PT | 28.11.2011 | ||
MC | 31.12.2011 | ||
Former [2012/31] | AT | 27.07.2011 | |
BE | 27.07.2011 | ||
CY | 27.07.2011 | ||
DK | 27.07.2011 | ||
FI | 27.07.2011 | ||
NL | 27.07.2011 | ||
SE | 27.07.2011 | ||
GR | 28.10.2011 | ||
PT | 28.11.2011 | ||
Former [2012/12] | AT | 27.07.2011 | |
BE | 27.07.2011 | ||
CY | 27.07.2011 | ||
FI | 27.07.2011 | ||
NL | 27.07.2011 | ||
SE | 27.07.2011 | ||
GR | 28.10.2011 | ||
PT | 28.11.2011 | ||
Former [2012/11] | AT | 27.07.2011 | |
BE | 27.07.2011 | ||
FI | 27.07.2011 | ||
NL | 27.07.2011 | ||
SE | 27.07.2011 | ||
GR | 28.10.2011 | ||
PT | 28.11.2011 | ||
Former [2012/10] | BE | 27.07.2011 | |
FI | 27.07.2011 | ||
NL | 27.07.2011 | ||
SE | 27.07.2011 | ||
GR | 28.10.2011 | ||
PT | 28.11.2011 | ||
Former [2012/09] | BE | 27.07.2011 | |
FI | 27.07.2011 | ||
NL | 27.07.2011 | ||
PT | 28.11.2011 | ||
Former [2012/08] | NL | 27.07.2011 | Documents cited: | Search | [XY]US5326711 (MALHI SATWINDER [US]) [X] 2-6,11-14 * column 3, line 6 - line 23; figure 1 * * column 4, line 5 - line 11 * [Y] 7,8,10; | [X]US5405794 (KIM MANJIN J [US]) [X] 1 * column 3, line 8 - line 36; figure 9 *; | [XY]US5637898 (BALIGA BANTVAL J [US]) [X] 11-13,16,17,19 * column 3, line 46 - line 67; figure 3 * * column 7, line 42 - column 8, line 26; figure 3 * [Y] 7,8,10; | [X]WO9827584 (SILICONIX INC [US]) [X] 1 * page 3, line 24 - page 6, line 10; figures 1-10,12 *; | [X] - TSENGYOU SYAU ET AL, "COMPARISON OF ULTRALOW SPECIFIC ON-RESISTANCE UMOSFET STRUCTURES: THE ACCUFET, EXTFET, INVFET, AND CONVENTIONAL UMOSFET'S", TRANSACTIONS OF THE IRE PROFESSIONAL GROUP ON ELECTRON DEVICES, IEEE INC. NEW YORK, US, (19940501), vol. 41, no. 5, pages 800 - 808, XP000483878 [X] 11-15 * page 803 - page 804; figures 1,8; table 1 * | by applicant | US4903189 | US5072266 | US5814838 | - B. J. BALIGA ET AL., "The Accumulation-Mode Field-Effect Transistor: A New Ultralow On-Resistance MOSFET", IEEE ELECTRON DEVICE LETTERS, (199208), vol. 13, no. 8, pages 427 - 429 | - T. SYAU ET AL., "Comparison of Ultralow Specific On-Resistance UMOSFET Structures: The ACCUFET, EXTFET, INVFET, and Conventional UMOSFET's", IEEE ELECTRON DEVICE LETTERS, (199405), vol. 41, no. 5, pages 800 - 808 |