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Extract from the Register of European Patents

EP About this file: EP1113501

EP1113501 - Power MOSFET having a trench gate electrode [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  01.06.2012
Database last updated on 09.09.2024
Most recent event   Tooltip17.11.2017Lapse of the patent in a contracting statepublished on 20.12.2017  [2017/51]
Applicant(s)For all designated states
SILICONIX Incorporated
2201 Laurelwood Road, M/S 38
Santa Clara, California 95054-0951 / US
[2011/30]
Former [2001/27]For all designated states
SILICONIX INCORPORATED
2201 Laurelwood Road, M/S 38
Santa Clara, California 95054-0951 / US
Inventor(s)01 / Bhalla, Anup
2322 Homestead Road, Apt. No. 1
Santa Clara, CA 95050 / US
02 / Korec, Jacek, Dr.
6859 Almaden Road
San Jose, CA 95120 / US
 [2011/30]
Former [2001/27]01 / Bhalla, Anup
2322 Homestead Road, Apt. 1
Santa Clara, CA 95050 / US
02 / Korec, Jacek, Dr.
6859 Almaden Road
San Jose, CA 95120 / US
Representative(s)Richards, John, et al
Ladas & Parry LLP
Temple Chambers
3-7 Temple Avenue
London EC4Y 0DA / GB
[N/P]
Former [2012/24]Richards, John, et al
Ladas & Parry LLP Dachauerstrasse 37
80335 München / DE
Former [2003/45]Ebner von Eschenbach, Jennifer
Ladas & Parry, Dachauerstrasse 37
80335 München / DE
Former [2002/35]Manitz, Finsterwald & Partner
Postfach 31 02 20
80102 München / DE
Former [2001/27]Kolb, Georg
DaimlerChrysler AG, Postfach 35 35
74025 Heilbronn / DE
Application number, filing date00128393.622.12.2000
[2001/27]
Priority number, dateUS1999047632030.12.1999         Original published format: US 476320
[2001/27]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1113501
Date:04.07.2001
Language:EN
[2001/27]
Type: A3 Search report 
No.:EP1113501
Date:07.07.2004
[2004/28]
Type: B1 Patent specification 
No.:EP1113501
Date:27.07.2011
Language:EN
[2011/30]
Search report(s)(Supplementary) European search report - dispatched on:EP17.05.2004
ClassificationIPC:H01L29/78, // H01L29/08, H01L29/423, H01L29/06, H01L29/10, H01L29/49
[2010/50]
CPC:
H01L29/7813 (EP,US); H01L29/0878 (EP,US); H01L29/1095 (EP,US);
H01L29/66734 (EP,US); H01L29/0696 (EP,US); H01L29/4236 (EP,US);
H01L29/42368 (EP,US); H01L29/4238 (EP,US); H01L29/4916 (EP,US) (-)
Former IPC [2004/11]H01L29/78
Former IPC [2001/27]H01L29/78, H01L29/36, H01L29/423, H01L29/49
Designated contracting statesAT,   BE,   CH,   CY,   DE,   DK,   ES,   FI,   FR,   GB,   GR,   IE,   IT,   LI,   LU,   MC,   NL,   PT,   SE,   TR [2001/27]
TitleGerman:Leistungs-MOSFET mit einer Graben-Gateelektrode[2001/27]
English:Power MOSFET having a trench gate electrode[2001/27]
French:MOSFET de puissance à électrode de grille en tranchée[2001/27]
Examination procedure28.10.2004Examination requested  [2004/53]
15.12.2006Despatch of a communication from the examining division (Time limit: M06)
20.04.2007Reply to a communication from the examining division
16.10.2007Despatch of a communication from the examining division (Time limit: M06)
18.03.2008Reply to a communication from the examining division
22.10.2008Despatch of a communication from the examining division (Time limit: M04)
05.02.2009Reply to a communication from the examining division
12.04.2010Despatch of a communication from the examining division (Time limit: M04)
13.08.2010Reply to a communication from the examining division
14.01.2011Communication of intention to grant the patent
06.05.2011Fee for grant paid
06.05.2011Fee for publishing/printing paid
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  15.12.2006
Opposition(s)02.05.2012No opposition filed within time limit [2012/27]
Fees paidRenewal fee
28.11.2002Renewal fee patent year 03
29.12.2003Renewal fee patent year 04
23.12.2004Renewal fee patent year 05
27.12.2005Renewal fee patent year 06
27.12.2006Renewal fee patent year 07
24.12.2007Renewal fee patent year 08
24.12.2008Renewal fee patent year 09
28.12.2009Renewal fee patent year 10
27.12.2010Renewal fee patent year 11
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipAT27.07.2011
BE27.07.2011
CY27.07.2011
DK27.07.2011
FI27.07.2011
NL27.07.2011
SE27.07.2011
TR27.07.2011
GR28.10.2011
ES07.11.2011
PT28.11.2011
IE22.12.2011
LU22.12.2011
CH31.12.2011
LI31.12.2011
MC31.12.2011
[2017/51]
Former [2013/44]AT27.07.2011
BE27.07.2011
CY27.07.2011
DK27.07.2011
FI27.07.2011
NL27.07.2011
SE27.07.2011
TR27.07.2011
GR28.10.2011
ES07.11.2011
PT28.11.2011
IE22.12.2011
LU22.12.2011
CH31.12.2011
LI31.12.2011
MC31.12.2011
Former [2013/25]AT27.07.2011
BE27.07.2011
CY27.07.2011
DK27.07.2011
FI27.07.2011
NL27.07.2011
SE27.07.2011
GR28.10.2011
ES07.11.2011
PT28.11.2011
IE22.12.2011
LU22.12.2011
CH31.12.2011
LI31.12.2011
MC31.12.2011
Former [2013/22]AT27.07.2011
BE27.07.2011
CY27.07.2011
DK27.07.2011
FI27.07.2011
NL27.07.2011
SE27.07.2011
GR28.10.2011
ES07.11.2011
PT28.11.2011
IE22.12.2011
CH31.12.2011
LI31.12.2011
MC31.12.2011
Former [2012/49]AT27.07.2011
BE27.07.2011
CY27.07.2011
DK27.07.2011
FI27.07.2011
NL27.07.2011
SE27.07.2011
GR28.10.2011
PT28.11.2011
IE22.12.2011
CH31.12.2011
LI31.12.2011
MC31.12.2011
Former [2012/47]AT27.07.2011
BE27.07.2011
CY27.07.2011
DK27.07.2011
FI27.07.2011
NL27.07.2011
SE27.07.2011
GR28.10.2011
PT28.11.2011
IE22.12.2011
MC31.12.2011
Former [2012/33]AT27.07.2011
BE27.07.2011
CY27.07.2011
DK27.07.2011
FI27.07.2011
NL27.07.2011
SE27.07.2011
GR28.10.2011
PT28.11.2011
MC31.12.2011
Former [2012/31]AT27.07.2011
BE27.07.2011
CY27.07.2011
DK27.07.2011
FI27.07.2011
NL27.07.2011
SE27.07.2011
GR28.10.2011
PT28.11.2011
Former [2012/12]AT27.07.2011
BE27.07.2011
CY27.07.2011
FI27.07.2011
NL27.07.2011
SE27.07.2011
GR28.10.2011
PT28.11.2011
Former [2012/11]AT27.07.2011
BE27.07.2011
FI27.07.2011
NL27.07.2011
SE27.07.2011
GR28.10.2011
PT28.11.2011
Former [2012/10]BE27.07.2011
FI27.07.2011
NL27.07.2011
SE27.07.2011
GR28.10.2011
PT28.11.2011
Former [2012/09]BE27.07.2011
FI27.07.2011
NL27.07.2011
PT28.11.2011
Former [2012/08]NL27.07.2011
Documents cited:Search[XY]US5326711  (MALHI SATWINDER [US]) [X] 2-6,11-14 * column 3, line 6 - line 23; figure 1 * * column 4, line 5 - line 11 * [Y] 7,8,10;
 [X]US5405794  (KIM MANJIN J [US]) [X] 1 * column 3, line 8 - line 36; figure 9 *;
 [XY]US5637898  (BALIGA BANTVAL J [US]) [X] 11-13,16,17,19 * column 3, line 46 - line 67; figure 3 * * column 7, line 42 - column 8, line 26; figure 3 * [Y] 7,8,10;
 [X]WO9827584  (SILICONIX INC [US]) [X] 1 * page 3, line 24 - page 6, line 10; figures 1-10,12 *;
 [X]  - TSENGYOU SYAU ET AL, "COMPARISON OF ULTRALOW SPECIFIC ON-RESISTANCE UMOSFET STRUCTURES: THE ACCUFET, EXTFET, INVFET, AND CONVENTIONAL UMOSFET'S", TRANSACTIONS OF THE IRE PROFESSIONAL GROUP ON ELECTRON DEVICES, IEEE INC. NEW YORK, US, (19940501), vol. 41, no. 5, pages 800 - 808, XP000483878 [X] 11-15 * page 803 - page 804; figures 1,8; table 1 *
by applicantUS4903189
 US5072266
 US5814838
    - B. J. BALIGA ET AL., "The Accumulation-Mode Field-Effect Transistor: A New Ultralow On-Resistance MOSFET", IEEE ELECTRON DEVICE LETTERS, (199208), vol. 13, no. 8, pages 427 - 429
    - T. SYAU ET AL., "Comparison of Ultralow Specific On-Resistance UMOSFET Structures: The ACCUFET, EXTFET, INVFET, and Conventional UMOSFET's", IEEE ELECTRON DEVICE LETTERS, (199405), vol. 41, no. 5, pages 800 - 808
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.