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EP1113493
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EP About this file: EP1113493
| EP1113493 - Process of fabrication of a ferroelectric semiconductor memory [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 14.11.2003 Database last updated on 03.09.2024 | Most recent event Tooltip | 14.11.2003 | Application deemed to be withdrawn | published on 02.01.2004 [2004/01] | Applicant(s) | For all designated states Infineon Technologies AG St.-Martin-Strasse 53 81669 München / DE | [2001/27] | Inventor(s) | 01 /
Dehm, Christine Geiersberg 15 90403 Nürnberg / DE | 02 /
Hartner, Walter Salzmesserstrasse 6 81829 München / DE | 03 /
Kastner, Marcus Kleisstrasse 14 85521 Ottobrunn / DE | 04 /
Schindler, Günther Ungererstrasse 19 80802 München / DE | [2001/27] | Representative(s) | Graf Lambsdorff, Matthias, et al Patentanwälte Lambsdorff & Lange Dingolfinger Strasse 6 81673 München / DE | [N/P] |
| Former [2001/27] | Graf Lambsdorff, Matthias, Dr., et al Patentanwälte Lambsdorff & Lange Dingolfinger Strasse 6 81673 München / DE | Application number, filing date | 00128568.3 | 27.12.2000 | [2001/27] | Priority number, date | DE2000100005 | 03.01.2000 Original published format: DE 10000005 | [2001/27] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | EP1113493 | Date: | 04.07.2001 | Language: | DE | [2001/27] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 03.04.2001 | Classification | IPC: | H01L21/8246, H01L27/115, H01L21/02 | [2001/27] | CPC: |
H01L28/55 (EP,US);
H10B12/00 (KR);
H10B53/00 (EP,US);
H01L28/75 (EP,US);
H10B53/30 (EP,US)
| Designated contracting states | DE, FR, GB, IE, IT [2002/13] |
| Former [2001/27] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR | Title | German: | Verfahren zur Herstellung eines ferroelektrischen Halbleiterspeichers | [2001/27] | English: | Process of fabrication of a ferroelectric semiconductor memory | [2001/27] | French: | Procédé de fabrication d'une mémoire ferroélectrique à semi-conducteur | [2001/27] | Examination procedure | 01.08.2001 | Examination requested [2001/40] | 01.07.2003 | Application deemed to be withdrawn, date of legal effect [2004/01] | 04.08.2003 | Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2004/01] | Fees paid | Penalty fee | Additional fee for renewal fee | 31.12.2002 | 03 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | JPH1168041 [ ]; | [XA]EP0629002 (MOTOROLA INC [US]); | [A]US5566045 (SUMMERFELT SCOTT R [US], et al); | [YA]DE19640246 (SIEMENS AG [DE]); | [XY]EP0915522 (NEC CORP [JP], et al); | [YA]EP0951058 (SYMETRIX CORP [US], et al); | [PXPA]US6121083 (MATSUKI TAKEO [JP]) |