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Extract from the Register of European Patents

EP About this file: EP1063240

EP1063240 - Improved organocopper precursor blend and method of depositing copper by chemical vapor deposition [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  20.06.2003
Database last updated on 20.09.2024
Most recent event   Tooltip20.06.2003Withdrawal of applicationpublished on 06.08.2003  [2003/32]
Applicant(s)For all designated states
Applied Materials, Inc.
3050 Bowers Avenue
Mail Stop 2634
Santa Clara, CA 95054 / US
[N/P]
Former [2000/52]For all designated states
Applied Materials, Inc.
3050 Bowers Avenue, Mail Stop 2634
Santa Clara, CA 95054 / US
Inventor(s)01 / Chen, Ling
784 Dartshire Way
Sunnyvale, California 94087 / US
02 / Ganguli, Seshadri
713 Golden Oak Drive No. 7
Sunnyvale, California 94086 / US
03 / Zheng, Bo
1020 W. Riverside Way
San Jose, California 95129 / US
04 / Wilson, Samuel
350 N. Bayview Road
Sunnyvale California 94086 / US
05 / Marcadal, Christophe
3655 Pruneridge Avenue No.124
Santa Clara, California 95051 / US
[2000/52]
Representative(s)Allard, Susan Joyce, et al
BOULT WADE TENNANT, Verulam Gardens 70 Gray's Inn Road
London WC1X 8BT / GB
[N/P]
Former [2002/16]Allard, Susan Joyce, et al
BOULT WADE TENNANT, Verulam Gardens 70 Gray's Inn Road
London WC1X 8BT / GB
Former [2000/52]Allard, Susan Joyce, et al
Boult Wade Tennant 27 Furnival Street
London EC4A 1PQ / GB
Application number, filing date00304591.131.05.2000
[2000/52]
Priority number, dateUS1999033997025.06.1999         Original published format: US 339970
[2000/52]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1063240
Date:27.12.2000
Language:EN
[2000/52]
Type: A3 Search report 
No.:EP1063240
Date:27.11.2002
[2002/48]
Search report(s)(Supplementary) European search report - dispatched on:EP11.10.2002
ClassificationIPC:C07F7/08, C23C16/44, C23C16/448
[2002/47]
CPC:
C23C16/18 (EP,KR,US); C23C16/4485 (EP,US)
Former IPC [2000/52]C07F7/08, C23C16/44
Designated contracting statesAT,   BE,   CH,   CY,   DE,   DK,   ES,   FI,   FR,   GB,   GR,   IE,   IT,   LI,   LU,   MC,   NL,   PT,   SE [2000/52]
Extension statesALNot yet paid
LTNot yet paid
LVNot yet paid
MKNot yet paid
RONot yet paid
SINot yet paid
TitleGerman:Organokupfervorläuferzusammensetzungen, und Verfahren zur Abscheidung von Kupfer mittels CVD[2000/52]
English:Improved organocopper precursor blend and method of depositing copper by chemical vapor deposition[2000/52]
French:Mélange contenant un précurseur organocuivreux et méthode de dépôt de cuivre utilisant CVD[2000/52]
Examination procedure27.05.2003Examination requested  [2003/31]
11.06.2003Application withdrawn by applicant  [2003/32]
Fees paidRenewal fee
27.05.2002Renewal fee patent year 03
23.05.2003Renewal fee patent year 04
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Documents cited:Search[XD]US5744192  (NGUYEN TUE [US], et al) [XD] 1-6 * claims 1,2 * * column 3, line 32 - line 53 *;
 [X]  - ZHANG, M. ET AL, "Optimization of copper CVD film properties using the precursor of Cu(hfac)(tmvs) with variations of additive content", CA, CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US, Database accession no. 132:215213, URL: STN, XP002214945 [X] 1-6 * abstract *
 [X]  - NORMAN J A T ET AL, "CHEMICAL ADDITIVES FOR IMPROVED COPPER CHEMICAL VAPOUR DEPOSITION PROCESSING", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, (19950615), vol. 262, no. 1/2, ISSN 0040-6090, pages 46 - 51, XP000517369 [X] 1,2,3-6 * page 48, column L, line 15 - line 41 * * page 51, column L, line 27 - line 37 *

DOI:   http://dx.doi.org/10.1016/0040-6090(94)05808-3
 [A]  - NORMAN J A T ET AL, "New OMCVD precursors for selective copper metallization", VLSI MULTILEVEL INTERCONNECTION CONFERENCE, 1991, PROCEEDINGS., EIGHTH INTERNATIONAL IEEE SANTA CLARA, CA, USA 11-12 JUNE 1991, NEW YORK, NY, USA,IEEE, US, (19910611), ISBN 0-87942-673-X, pages 123 - 129, XP010040520 [A] 1-6 * the whole document *

DOI:   http://dx.doi.org/10.1109/VMIC.1991.152975
    [ ] - IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, PROCEEDINGS, SAN FRANCISCO, MAY 24-26, 1999 (1999), 170-172 PUBLISHER: INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, NEW YORK, N. Y.
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.