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EP1087430
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EP About this file: EP1087430
| EP1087430 - A method and apparatus for integrating a metal nitride film in a semiconductor device [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 27.08.2004 Database last updated on 02.11.2024 | Most recent event Tooltip | 27.08.2004 | Application deemed to be withdrawn | published on 13.10.2004 [2004/42] | Applicant(s) | For all designated states Applied Materials, Inc. 3050 Bowers Avenue Santa Clara, CA 95054 / US | [N/P] |
| Former [2001/13] | For all designated states Applied Materials, Inc. 3050 Bowers Avenue Santa Clara, California 95054 / US | Inventor(s) | 01 /
Narwankar, Pravin 392 Waverly Street Sunnyvale, CA 94086 / US | 02 /
Sahin, Turgut 1110 Chadwick Place Cupertino, CA 95014 / US | [2001/13] | Representative(s) | Setna, Rohan P., et al Boult Wade Tennant Verulam Gardens 70 Gray's Inn Road London WC1X 8BT / GB | [N/P] |
| Former [2004/34] | Setna, Rohan P., et al Boult Wade Tennant Verulam Gardens 70 Gray's Inn Road London WC1X 8BT / GB | ||
| Former [2001/13] | Allard, Susan Joyce, et al BOULT WADE TENNANT, Verulam Gardens 70 Gray's Inn Road London WC1X 8BT / GB | Application number, filing date | 00308405.0 | 25.09.2000 | [2001/13] | Priority number, date | US19990405554 | 24.09.1999 Original published format: US 405554 | [2001/13] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1087430 | Date: | 28.03.2001 | Language: | EN | [2001/13] | Classification | IPC: | H01L21/285 | [2001/13] | CPC: |
H01L21/7687 (EP,US);
H01L21/31 (KR);
H01L28/40 (EP,US)
| Designated contracting states | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE [2001/13] | Extension states | AL | Not yet paid | LT | Not yet paid | LV | Not yet paid | MK | Not yet paid | RO | Not yet paid | SI | Not yet paid | Title | German: | Apparat und Methode, einen Metallnitridfilm in eine Halbleiteranordnung zu integrieren | [2001/13] | English: | A method and apparatus for integrating a metal nitride film in a semiconductor device | [2001/13] | French: | Appareil et méthode d'intégrer und couche de nitrure d'un métal dans un dispositif semiconducteur | [2001/13] | Examination procedure | 01.04.2004 | Application deemed to be withdrawn, date of legal effect [2004/42] | 14.05.2004 | Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2004/42] | Fees paid | Renewal fee | 16.09.2002 | Renewal fee patent year 03 | Penalty fee | Additional fee for renewal fee | 30.09.2003 | 04 M06 Not yet paid |
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