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EP1198010
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EP About this file: EP1198010
| EP1198010 - Power semiconductor device comprising a lateral DMOS transistor [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 01.08.2008 Database last updated on 02.11.2024 | Most recent event Tooltip | 01.08.2008 | Withdrawal of application | published on 03.09.2008 [2008/36] | Applicant(s) | For all designated states STMicroelectronics Srl Via C. Olivetti, 2 20041 Agrate Brianza (Milano) / IT | [N/P] |
| Former [2002/16] | For all designated states STMicroelectronics S.r.l. Via C. Olivetti, 2 20041 Agrate Brianza (Milano) / IT | Inventor(s) | 01 /
Patti, Davide Corso Indipendenza, 157 95122 Catania / IT | [2002/16] | Representative(s) | Cerbaro, Elena, et al Studio Torta S.p.A. Via Viotti, 9 10121 Torino / IT | [N/P] |
| Former [2002/16] | Cerbaro, Elena, Dr., et al STUDIO TORTA S.r.l., Via Viotti, 9 10121 Torino / IT | Application number, filing date | 00830661.5 | 11.10.2000 | [2002/16] | Filing language | IT | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP1198010 | Date: | 17.04.2002 | Language: | EN | [2002/16] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 18.04.2001 | Classification | IPC: | H01L29/78, H01L29/06, H01L27/088 | [2002/16] | CPC: |
H01L29/0852 (EP,US);
H01L29/0653 (EP,US);
H01L29/7816 (EP,US);
H01L29/7824 (EP,US);
H01L29/0847 (EP,US)
| Designated contracting states | DE, FR, GB, IT [2003/02] |
| Former [2002/16] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | Leistungs-Halbleiteranordnung mit einem lateralen DMOS-Transistor | [2002/16] | English: | Power semiconductor device comprising a lateral DMOS transistor | [2002/16] | French: | Dispositif semi-conducteur de puissance comprenant un transistor DMOS latéral | [2002/16] | Examination procedure | 16.10.2002 | Examination requested [2002/50] | 16.06.2008 | Despatch of a communication from the examining division (Time limit: M04) | 22.07.2008 | Application withdrawn by applicant [2008/36] | Fees paid | Renewal fee | 28.10.2002 | Renewal fee patent year 03 | 27.10.2003 | Renewal fee patent year 04 | 26.10.2004 | Renewal fee patent year 05 | 28.10.2005 | Renewal fee patent year 06 | 27.10.2006 | Renewal fee patent year 07 | 26.10.2007 | Renewal fee patent year 08 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XY]US4796070 (BLACK ROBERT D [US]) [X] 1-3,7,8,10 * column 6, line 15 - column 9, line 15; figures 1-7 * [Y] 5,9; | [YA]JPH11103056 | [DYA] - ZITOUNI M ET AL, "A new concept for the lateral DMOS transistor for smart power IC's", PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD'99), TORONTO, ONTARIO, CANADA, IEEE, PISCATAWAY, NJ, USA, (19990526), ISBN 0-7803-5290-4, pages 73 - 76, XP000903548 [DY] 5 * figures 3A,11 * [A] 1,8,10 | [YA] - PATENT ABSTRACTS OF JAPAN, (19990730), vol. 1999, no. 09, & JP11103056 A 19990413 (TOYOTA CENTRAL RES & DEV LAB INC) [Y] 9 * abstract * [A] 1,8,10 |