Extract from the Register of European Patents

EP About this file: EP1159583

EP1159583 - METHOD OF MEASURING WAVINESS OF SILICON WAFERS [Right-click to bookmark this link]
Former [2001/49]METHOD AND SYSTEM OF MEASURING WAVINESS IN SILICON WAFERS
[2004/03]
StatusThe application is deemed to be withdrawn
Status updated on  22.10.2004
Database last updated on 11.04.2026
Most recent event   Tooltip22.10.2004Application deemed to be withdrawnpublished on 08.12.2004  [2004/50]
Applicant(s)For all designated states
MEMC Electronic Materials, Inc.
501 Pearl Drive (O'Fallon) P.O. Box 8
St. Peters, Missouri 63376 / US
[N/P]
Former [2001/49]For all designated states
MEMC Electronic Materials, Inc.
501 Pearl Drive (O'Fallon) P.O. Box 8
St. Peters, Missouri 63376 / US
Inventor(s)01 / WITTE, Dale A., MEMC Electronic Materials, Inc.
501 Pearl Drive, P.O. Box 8
St. Peters, MO 63376 / US
 [2001/49]
Representative(s)Maiwald GmbH
Elisenhof
Elisenstraße 3
80335 München / DE
[N/P]
Former [2001/49]Maiwald Patentanwalts GmbH
Elisenhof Elisenstrasse 3
80335 München / DE
Application number, filing date00914535.007.02.2000
[2001/49]
WO2000US03078
Priority number, dateUS1999026423005.03.1999         Original published format: US 264230
[2001/49]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO0052420
Date:08.09.2000
Language:EN
[2000/36]
Type: A1 Application with search report 
No.:EP1159583
Date:05.12.2001
Language:EN
The application published by WIPO in one of the EPO official languages on 08.09.2000 takes the place of the publication of the European patent application.
[2001/49]
Search report(s)International search report - published on:EP08.09.2000
ClassificationIPC:G01B21/30
[2001/49]
CPC:
G01B21/30 (EP,KR,US); H10P74/203 (EP,US)
Designated contracting statesAT,   BE,   CH,   CY,   DE,   DK,   ES,   FI,   FR,   GB,   GR,   IE,   IT,   LI,   LU,   MC,   NL,   PT,   SE [2001/49]
TitleGerman:VERFAHREN ZUR MESSUNG DER WELLIGKEIT VON SILIZIUMSCHEIBEN[2004/03]
English:METHOD OF MEASURING WAVINESS OF SILICON WAFERS[2004/03]
French:PROCEDE DE MESURE DU VOILAGE DE PLAQUETTES DE SILICIUM[2004/03]
Former [2001/49]VERFAHREN UND SYSTEM ZUR MESSUNG DER WELLIGKEIT VON SILIZIUMSCHEIBEN
Former [2001/49]METHOD AND SYSTEM OF MEASURING WAVINESS IN SILICON WAFERS
Former [2001/49]PROCEDE ET SYSTEME DE MESURE DU VOILAGE DE PLAQUETTES DE SILICIUM
Entry into regional phase09.08.2001National basic fee paid 
09.08.2001Designation fee(s) paid 
09.08.2001Examination fee paid 
Examination procedure28.07.2000Request for preliminary examination filed
International Preliminary Examining Authority: EP
09.08.2001Examination requested  [2001/49]
25.11.2002Despatch of a communication from the examining division (Time limit: M04)
20.03.2003Reply to a communication from the examining division
21.01.2004Communication of intention to grant the patent
02.06.2004Application deemed to be withdrawn, date of legal effect  [2004/50]
07.07.2004Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time  [2004/50]
Fees paidRenewal fee
13.02.2002Renewal fee patent year 03
12.02.2003Renewal fee patent year 04
12.02.2004Renewal fee patent year 05
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