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Extract from the Register of European Patents

EP About this file: EP1198836

EP1198836 - FUSE FOR SEMICONDUCTOR DEVICE [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  06.10.2006
Database last updated on 02.11.2024
Most recent event   Tooltip20.06.2008Change - applicantpublished on 23.07.2008  [2008/30]
Applicant(s)For all designated states
Infineon Technologies AG
St.-Martin-Strasse 53
81669 München / DE
[2008/30]
Former [2005/48]For all designated states
Infineon Technologies AG
St.-Martin-Strasse 53
81669 München / DE
Former [2002/17]For all designated states
Infineon Technologies AG
St.-Martin-Strasse 53
81541 München / DE
Inventor(s)01 / LE, Thoai-Thai
Ottobrunnerstrasse 43
D-81737 München / DE
02 / LINDOLF, Jürgen
Terlaner Strasse 2
D-86316 Friedberg / DE
 [2002/17]
Representative(s)Müller Hoffmann & Partner
Patentanwälte mbB
St.-Martin-Straße 58
81541 München / DE
[N/P]
Former [2002/17]Müller . Hoffmann & Partner Patentanwälte
Innere Wiener Strasse 17
81667 München / DE
Application number, filing date00945612.006.06.2000
[2002/17]
WO2000DE01867
Priority number, dateDE1999102610708.06.1999         Original published format: DE 19926107
[2002/17]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report
No.:WO0075987
Date:14.12.2000
Language:DE
[2000/50]
Type: A1 Application with search report 
No.:EP1198836
Date:24.04.2002
Language:DE
The application published by WIPO in one of the EPO official languages on 14.12.2000 takes the place of the publication of the European patent application.
[2002/17]
Type: B1 Patent specification 
No.:EP1198836
Date:30.11.2005
Language:DE
[2005/48]
Search report(s)International search report - published on:EP14.12.2000
ClassificationIPC:H01L23/525
[2002/17]
CPC:
H01L23/5256 (EP,US); H01L23/525 (KR); H01L23/5258 (EP,US);
H01L2924/0002 (EP,US); H01L2924/3011 (EP,US)
C-Set:
H01L2924/0002, H01L2924/00 (EP,US)
Designated contracting statesDE,   GB,   IT [2004/20]
Former [2002/17]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:FUSE FÜR HALBLEITERANORDNUNG[2002/17]
English:FUSE FOR SEMICONDUCTOR DEVICE[2002/17]
French:FUSIBLE POUR DISPOSITIF A SEMICONDUCTEUR[2002/17]
Entry into regional phase23.10.2001National basic fee paid 
23.10.2001Designation fee(s) paid 
23.10.2001Examination fee paid 
Examination procedure05.10.2000Request for preliminary examination filed
International Preliminary Examining Authority: EP
23.10.2001Examination requested  [2002/17]
02.06.2005Communication of intention to grant the patent
28.09.2005Fee for grant paid
28.09.2005Fee for publishing/printing paid
Opposition(s)31.08.2006No opposition filed within time limit [2006/45]
Fees paidRenewal fee
13.06.2002Renewal fee patent year 03
26.06.2003Renewal fee patent year 04
28.06.2004Renewal fee patent year 05
29.06.2005Renewal fee patent year 06
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  Tooltipdeleted
[2007/45]
Former [2007/35]IT30.11.2005
Cited inInternational search[A]JPS5833865  ;
 [A]US3863231  (TAYLOR WILFRED KENELM) [A] 1-9 * the whole document *;
 [A]EP0903784  (SIEMENS AG [DE]) [A] 1-9* the whole document *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19830519), vol. 007, no. 115, Database accession no. (E - 176), & JP58033865 A 19830228 (TOKYO SHIBAURA DENKI KK) [A] 1-9 * abstract *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.