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Extract from the Register of European Patents

EP About this file: EP1231628

EP1231628 - Method for roughening a surface of a semioconductor substrate [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  03.10.2003
Database last updated on 02.11.2024
Most recent event   Tooltip03.10.2003Application deemed to be withdrawnpublished on 19.11.2003  [2003/47]
Applicant(s)For all designated states
Infineon Technologies SC300 GmbH & Co. KG
Königsbrücker Strasse 180
01099 Dresden / DE
[2002/33]
Inventor(s)01 / Storbeck, Olaf
Nordstrasse 38
01099 Dresden / DE
02 / Kurtenbach, Andreas
Kamenzer Strasse 60
01099 Dresden / DE
03 / Kuerner, Wolfgang
Karl-Marx-Strasse 13
01099 Dresden / DE
 [2002/33]
Representative(s)Fischer, Volker, et al
Epping Hermann Fischer
Patentanwaltsgesellschaft mbH
Schlossschmidstrasse 5
80639 München / DE
[N/P]
Former [2002/33]Fischer, Volker, Dipl.-Ing., et al
Epping Hermann & Fischer Ridlerstrasse 55
80339 München / DE
Application number, filing date01103005.308.02.2001
[2002/33]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP1231628
Date:14.08.2002
Language:EN
[2002/33]
Search report(s)(Supplementary) European search report - dispatched on:EP18.07.2001
ClassificationIPC:H01L21/02, H01L21/8242
[2002/33]
CPC:
H01L28/84 (EP); H01L21/32135 (EP)
Designated contracting states(deleted) [2003/19]
Former [2002/33]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE,  TR 
TitleGerman:Methode, die Oberfläche eines Halbleiters aufzurauhen[2002/33]
English:Method for roughening a surface of a semioconductor substrate[2002/33]
French:Procédé pour rendre des surfaces de semiconducteur rugueuses[2002/33]
Examination procedure15.02.2003Application deemed to be withdrawn, date of legal effect  [2003/47]
18.06.2003Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time  [2003/47]
Fees paidPenalty fee
Penalty fee Rule 85a EPC 1973
25.03.2003AT   M01   Not yet paid
25.03.2003BE   M01   Not yet paid
25.03.2003CH   M01   Not yet paid
25.03.2003CY   M01   Not yet paid
25.03.2003DE   M01   Not yet paid
25.03.2003DK   M01   Not yet paid
25.03.2003ES   M01   Not yet paid
25.03.2003FI   M01   Not yet paid
25.03.2003FR   M01   Not yet paid
25.03.2003GB   M01   Not yet paid
25.03.2003GR   M01   Not yet paid
25.03.2003IE   M01   Not yet paid
25.03.2003IT   M01   Not yet paid
25.03.2003LU   M01   Not yet paid
25.03.2003MC   M01   Not yet paid
25.03.2003NL   M01   Not yet paid
25.03.2003PT   M01   Not yet paid
25.03.2003SE   M01   Not yet paid
25.03.2003TR   M01   Not yet paid
Penalty fee Rule 85b EPC 1973
25.03.2003M01   Not yet paid
Additional fee for renewal fee
28.02.200303   M06   Not yet paid
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Documents cited:Search[A]US6020609  (WU SHYE-LIN [TW]) [A] 1,4* the whole document *;
 [A]US6171955  (CHEN SHIH-CHING [TW]) [A] 1-3,5,6 * the whole document *;
 [X]  - PUTTE VAN DER P ET AL, "SURFACE MORPHOLOGY OF HCI SILICON WAFERS I. GAS PHASE COMPOSITION IN THE SILICON HCI SYSTEM AND SURFACE REACTIONS DURING ETCHING", JOURNAL OF CRYSTAL GROWTH,NL,NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, (1977), vol. 41, ISSN 0022-0248, pages 133 - 145, XP000577106 [X] 1-3 * the whole document *

DOI:   http://dx.doi.org/10.1016/0022-0248(77)90106-3
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.