EP1231628 - Method for roughening a surface of a semioconductor substrate [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 03.10.2003 Database last updated on 02.11.2024 | Most recent event Tooltip | 03.10.2003 | Application deemed to be withdrawn | published on 19.11.2003 [2003/47] | Applicant(s) | For all designated states Infineon Technologies SC300 GmbH & Co. KG Königsbrücker Strasse 180 01099 Dresden / DE | [2002/33] | Inventor(s) | 01 /
Storbeck, Olaf Nordstrasse 38 01099 Dresden / DE | 02 /
Kurtenbach, Andreas Kamenzer Strasse 60 01099 Dresden / DE | 03 /
Kuerner, Wolfgang Karl-Marx-Strasse 13 01099 Dresden / DE | [2002/33] | Representative(s) | Fischer, Volker, et al Epping Hermann Fischer Patentanwaltsgesellschaft mbH Schlossschmidstrasse 5 80639 München / DE | [N/P] |
Former [2002/33] | Fischer, Volker, Dipl.-Ing., et al Epping Hermann & Fischer Ridlerstrasse 55 80339 München / DE | Application number, filing date | 01103005.3 | 08.02.2001 | [2002/33] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP1231628 | Date: | 14.08.2002 | Language: | EN | [2002/33] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 18.07.2001 | Classification | IPC: | H01L21/02, H01L21/8242 | [2002/33] | CPC: |
H01L28/84 (EP);
H01L21/32135 (EP)
| Designated contracting states | (deleted) [2003/19] |
Former [2002/33] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR | Title | German: | Methode, die Oberfläche eines Halbleiters aufzurauhen | [2002/33] | English: | Method for roughening a surface of a semioconductor substrate | [2002/33] | French: | Procédé pour rendre des surfaces de semiconducteur rugueuses | [2002/33] | Examination procedure | 15.02.2003 | Application deemed to be withdrawn, date of legal effect [2003/47] | 18.06.2003 | Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time [2003/47] | Fees paid | Penalty fee | Penalty fee Rule 85a EPC 1973 | 25.03.2003 | AT   M01   Not yet paid | 25.03.2003 | BE   M01   Not yet paid | 25.03.2003 | CH   M01   Not yet paid | 25.03.2003 | CY   M01   Not yet paid | 25.03.2003 | DE   M01   Not yet paid | 25.03.2003 | DK   M01   Not yet paid | 25.03.2003 | ES   M01   Not yet paid | 25.03.2003 | FI   M01   Not yet paid | 25.03.2003 | FR   M01   Not yet paid | 25.03.2003 | GB   M01   Not yet paid | 25.03.2003 | GR   M01   Not yet paid | 25.03.2003 | IE   M01   Not yet paid | 25.03.2003 | IT   M01   Not yet paid | 25.03.2003 | LU   M01   Not yet paid | 25.03.2003 | MC   M01   Not yet paid | 25.03.2003 | NL   M01   Not yet paid | 25.03.2003 | PT   M01   Not yet paid | 25.03.2003 | SE   M01   Not yet paid | 25.03.2003 | TR   M01   Not yet paid | Penalty fee Rule 85b EPC 1973 | 25.03.2003 | M01   Not yet paid | Additional fee for renewal fee | 28.02.2003 | 03   M06   Not yet paid |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US6020609 (WU SHYE-LIN [TW]) [A] 1,4* the whole document *; | [A]US6171955 (CHEN SHIH-CHING [TW]) [A] 1-3,5,6 * the whole document *; | [X] - PUTTE VAN DER P ET AL, "SURFACE MORPHOLOGY OF HCI SILICON WAFERS I. GAS PHASE COMPOSITION IN THE SILICON HCI SYSTEM AND SURFACE REACTIONS DURING ETCHING", JOURNAL OF CRYSTAL GROWTH,NL,NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, (1977), vol. 41, ISSN 0022-0248, pages 133 - 145, XP000577106 [X] 1-3 * the whole document * DOI: http://dx.doi.org/10.1016/0022-0248(77)90106-3 |