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EP1139425
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EP About this file: EP1139425
| EP1139425 - DRAM memory array with n-channel and p-channel transistors [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 05.10.2007 Database last updated on 28.03.2026 | Most recent event Tooltip | 05.10.2007 | Application deemed to be withdrawn | published on 07.11.2007 [2007/45] | Applicant(s) | For all designated states Infineon Technologies AG St.-Martin-Strasse 53 81669 München / DE | [2001/40] | Inventor(s) | 01 /
Hofmann, Franz, Dr. Herbergstrasse 25B 80995 München / DE | [2001/40] | Representative(s) | Epping - Hermann - Fischer Patentanwaltsgesellschaft mbH Schlossschmidstrasse 5 80639 München / DE | [N/P] |
| Former [2001/40] | Epping Hermann & Fischer Ridlerstrasse 55 80339 München / DE | Application number, filing date | 01105818.7 | 08.03.2001 | [2001/40] | Priority number, date | DE2000115278 | 28.03.2000 Original published format: DE 10015278 | [2001/40] | Filing language | DE | Procedural language | DE | Publication | Type: | A2 Application without search report | No.: | EP1139425 | Date: | 04.10.2001 | Language: | DE | [2001/40] | Type: | A3 Search report | No.: | EP1139425 | Date: | 16.08.2006 | [2006/33] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 14.07.2006 | Classification | IPC: | H01L27/108, H01L21/8242 | [2001/40] | CPC: |
H10B12/31 (EP,US);
H10B12/30 (KR);
H10B12/05 (EP,KR,US);
H10B12/37 (EP,US);
H10B12/395 (EP,US);
H10D84/85 (EP,KR,US)
| Designated contracting states | (deleted) [2007/17] |
| Former [2001/40] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR | Title | German: | DRAM-Speicherzellenfeld mit n- und p-Kanal-Transistoren | [2001/40] | English: | DRAM memory array with n-channel and p-channel transistors | [2001/40] | French: | Réseau de mémoire DRAM avec transistors à canal n et p | [2001/40] | Examination procedure | 17.02.2007 | Application deemed to be withdrawn, date of legal effect [2007/45] | 13.06.2007 | Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time [2007/45] | Fees paid | Renewal fee | 24.03.2003 | Renewal fee patent year 03 | 22.03.2004 | Renewal fee patent year 04 | 22.03.2005 | Renewal fee patent year 05 | 29.03.2006 | Renewal fee patent year 06 | Penalty fee | Penalty fee Rule 85a EPC 1973 | 27.03.2007 | DE M01 Not yet paid | 27.03.2007 | FR M01 Not yet paid | 27.03.2007 | GB M01 Not yet paid | 27.03.2007 | IE M01 Not yet paid | 27.03.2007 | IT M01 Not yet paid | Penalty fee Rule 85b EPC 1973 | 27.03.2007 | M01 Not yet paid | Additional fee for renewal fee | 31.03.2007 | 07 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X] JPH04302892 | [X] JPH08340088 | [A] US5970339 (CHOI JONG MOON et al.) [A] 1-11 * column A; figure - * | [X] PATENT ABSTRACTS OF JAPAN vol. 017, no. 118 (P - 1500) 11 March 1993 (1993-03-11) [X] 1-11 * abstract * | [X] PATENT ABSTRACTS OF JAPAN vol. 1997, no. 04 30 April 1997 (1997-04-30) [X] 1-11 * abstract * | [A] YO-HWAN KOH ET AL: "Body-Contacted SOI MOSFET Structure and Its Application to DRAM", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 45, no. 5, May 1998 (1998-05-01), XP011016527, ISSN: 0018-9383 [A] 11 * the whole document * |