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EP1168452
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EP About this file: EP1168452
| EP1168452 - Semiconductor device having vertical bipolar transistor [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 27.11.2015 Database last updated on 24.08.2024 | Most recent event Tooltip | 27.11.2015 | Application deemed to be withdrawn | published on 30.12.2015 [2015/53] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho, Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP | [N/P] |
| Former [2002/01] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210-8572 / JP | Inventor(s) | 01 /
Kozu, Toru, Intellectual Property Division Kabushiki Kaisha Toshiba, 1-1 Shibaura 1-chome Minato-ku, Tokyo 105-8001 / JP | [2002/01] | Representative(s) | Hoffmann Eitle Patent- und Rechtsanwälte PartmbB Arabellastrasse 30 81925 München / DE | [N/P] |
| Former [2002/01] | HOFFMANN - EITLE Patent- und Rechtsanwälte Arabellastrasse 4 81925 München / DE | Application number, filing date | 01114890.5 | 29.06.2001 | [2002/01] | Priority number, date | JP20000199841 | 30.06.2000 Original published format: JP 2000199841 | [2002/01] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1168452 | Date: | 02.01.2002 | Language: | EN | [2002/01] | Type: | A3 Search report | No.: | EP1168452 | Date: | 06.10.2004 | [2004/41] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 23.08.2004 | Classification | IPC: | H01L29/732, H01L29/08 | [2002/01] | CPC: |
H01L29/7322 (EP,US);
H01L27/08 (KR);
H01L29/0821 (EP,US)
| Designated contracting states | DE, FR, NL [2005/26] |
| Former [2002/01] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR | Title | German: | Halbleiterbauelement mit vertikalem Bipolartransistor | [2002/01] | English: | Semiconductor device having vertical bipolar transistor | [2002/01] | French: | Dispositif semiconducteur avec transistor bipolaire vertical | [2002/01] | Examination procedure | 29.06.2001 | Examination requested [2002/01] | 30.12.2008 | Despatch of a communication from the examining division (Time limit: M06) | 30.06.2009 | Reply to a communication from the examining division | 20.03.2015 | Despatch of a communication from the examining division (Time limit: M04) | 31.07.2015 | Application deemed to be withdrawn, date of legal effect [2015/53] | 25.08.2015 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2015/53] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 30.12.2008 | Fees paid | Renewal fee | 12.06.2003 | Renewal fee patent year 03 | 14.06.2004 | Renewal fee patent year 04 | 14.06.2005 | Renewal fee patent year 05 | 27.03.2006 | Renewal fee patent year 06 | 14.06.2007 | Renewal fee patent year 07 | 28.03.2008 | Renewal fee patent year 08 | 16.06.2009 | Renewal fee patent year 09 | 11.06.2010 | Renewal fee patent year 10 | 13.06.2011 | Renewal fee patent year 11 | 31.03.2012 | Renewal fee patent year 12 | 10.06.2013 | Renewal fee patent year 13 | 31.03.2014 | Renewal fee patent year 14 | Penalty fee | Additional fee for renewal fee | 30.06.2015 | 15 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]US3341755 (HUSHER JOHN D, et al) [Y] 1-11,15-18 * column 3, line 53 - column 4, line 40; figure 3 *; | [A]US3964089 (POON HIN-CHIU, et al) [A] 12-14* the whole document *; | [A]US4266238 (NISHIZAWA JUN-ICHI) [A] 1-18 * column 6, line 25 - column 8, line 26; figure 3 *; | [A]US5327006 (BEASOM JAMES D [US]) [A] 1-18 * column 4, line 31 - column 5, line 68; figures 2,3 *; | [Y] - ANONYMOUS, "A p- n+ip+n+ base-collector structure for minimination of impact ionization", RESEARCH DISCLOSURE, KENNETH MASON PUBLICATIONS, HAMPSHIRE, GB, (199104), vol. 324, no. 81, ISSN 0374-4353, XP007116312 [Y] 1-11,15-18 * the whole document * | [A] - S.M. SZE, Physics of Semiconductor Devices second edition, NEW YORK (US), JOHN WILEY & SONS, (1981), 224500, XP002290354 [A] 1-18 * page 78; figure 13 * |