EP1197995 - Method for fabricating a group III nitride film [Right-click to bookmark this link] | |||
Former [2002/16] | A method for fabricating a III nitride film | ||
[2010/30] | Status | No opposition filed within time limit Status updated on 11.11.2011 Database last updated on 02.09.2024 | Most recent event Tooltip | 27.09.2013 | Lapse of the patent in a contracting state New state(s): TR | published on 30.10.2013 [2013/44] | Applicant(s) | For all designated states NGK Insulators, Ltd. 2-56, Suda-Cho, Mizuho-ku Nagoya City, Aichi Pref. / JP | [2011/01] |
Former [2002/16] | For all designated states NGK INSULATORS, LTD. 2-56, Suda-cho, Mizuho-ku Nagoya City Aichi Pref. / JP | Inventor(s) | 01 /
Shibata, Tomohiko, c/o NGK Insulators 2-56, Suda-cho, Mizuho-ku Nagoya City, Aichi Pref. / JP | 02 /
Nakamura, Yukinori, c/o NGK Insulators 2-56, Suda-cho, Mizuho-ku Nagoya City, Aichi Pref. / JP | 03 /
Tanaka, Mitsuhiro, c/o NGK Insulators 2-56, Suda-cho, Mizuho-ku Nagoya City, Aichi Pref. / JP | [2002/16] | Representative(s) | TBK Bavariaring 4-6 80336 München / DE | [N/P] |
Former [2005/34] | TBK-Patent Bavariaring 4-6 80336 München / DE | ||
Former [2002/16] | Leson, Thomas Johannes Alois, Dipl.-Ing. Tiedtke-Bühling-Kinne & Partner GbR, TBK-Patent, Bavariaring 4 80336 München / DE | Application number, filing date | 01124422.5 | 11.10.2001 | [2002/16] | Priority number, date | JP20000313033 | 13.10.2000 Original published format: JP 2000313033 | [2002/16] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1197995 | Date: | 17.04.2002 | Language: | EN | [2002/16] | Type: | A3 Search report | No.: | EP1197995 | Date: | 05.07.2006 | [2006/27] | Type: | B1 Patent specification | No.: | EP1197995 | Date: | 05.01.2011 | Language: | EN | [2011/01] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 07.06.2006 | Classification | IPC: | C30B25/02, C30B29/40, H01L21/205 | [2010/30] | CPC: |
C30B25/02 (EP,KR,US);
C30B29/403 (EP,KR,US);
H01L21/0242 (EP,KR,US);
H01L21/0254 (EP,KR,US);
H01L21/0262 (EP,US)
|
Former IPC [2002/16] | H01L21/205, C30B25/02 | Designated contracting states | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR [2002/16] | Title | German: | Verfahren zur Herstellung einer Schicht aus einer Nitridverbindung der Gruppe III | [2002/16] | English: | Method for fabricating a group III nitride film | [2010/30] | French: | Méthode de fabrication d'une couche en nitrure d'éléments du groupe III | [2010/30] |
Former [2002/16] | A method for fabricating a III nitride film | ||
Former [2002/16] | Méthode de fabrication d'une couche en nitrure du groupe III | Examination procedure | 28.09.2006 | Amendment by applicant (claims and/or description) | 28.09.2006 | Examination requested [2006/45] | 05.06.2007 | Despatch of a communication from the examining division (Time limit: M06) | 14.12.2007 | Reply to a communication from the examining division | 24.11.2008 | Despatch of a communication from the examining division (Time limit: M06) | 04.05.2009 | Reply to a communication from the examining division | 16.07.2010 | Communication of intention to grant the patent | 19.11.2010 | Fee for grant paid | 19.11.2010 | Fee for publishing/printing paid | Opposition(s) | 06.10.2011 | No opposition filed within time limit [2011/50] | Fees paid | Renewal fee | 30.10.2003 | Renewal fee patent year 03 | 28.10.2004 | Renewal fee patent year 04 | 26.10.2005 | Renewal fee patent year 05 | 30.10.2006 | Renewal fee patent year 06 | 31.10.2007 | Renewal fee patent year 07 | 30.10.2008 | Renewal fee patent year 08 | 29.10.2009 | Renewal fee patent year 09 | 29.10.2010 | Renewal fee patent year 10 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | AT | 05.01.2011 | BE | 05.01.2011 | CY | 05.01.2011 | DK | 05.01.2011 | FI | 05.01.2011 | IT | 05.01.2011 | NL | 05.01.2011 | SE | 05.01.2011 | TR | 05.01.2011 | GR | 06.04.2011 | ES | 16.04.2011 | PT | 05.05.2011 | [2013/44] |
Former [2012/03] | AT | 05.01.2011 | |
BE | 05.01.2011 | ||
CY | 05.01.2011 | ||
DK | 05.01.2011 | ||
FI | 05.01.2011 | ||
IT | 05.01.2011 | ||
NL | 05.01.2011 | ||
SE | 05.01.2011 | ||
GR | 06.04.2011 | ||
ES | 16.04.2011 | ||
PT | 05.05.2011 | ||
Former [2011/47] | AT | 05.01.2011 | |
BE | 05.01.2011 | ||
CY | 05.01.2011 | ||
DK | 05.01.2011 | ||
FI | 05.01.2011 | ||
NL | 05.01.2011 | ||
SE | 05.01.2011 | ||
GR | 06.04.2011 | ||
ES | 16.04.2011 | ||
PT | 05.05.2011 | ||
Former [2011/40] | AT | 05.01.2011 | |
BE | 05.01.2011 | ||
CY | 05.01.2011 | ||
FI | 05.01.2011 | ||
NL | 05.01.2011 | ||
SE | 05.01.2011 | ||
GR | 06.04.2011 | ||
ES | 16.04.2011 | ||
PT | 05.05.2011 | ||
Former [2011/37] | BE | 05.01.2011 | |
CY | 05.01.2011 | ||
FI | 05.01.2011 | ||
SE | 05.01.2011 | ||
GR | 06.04.2011 | ||
ES | 16.04.2011 | ||
PT | 05.05.2011 | ||
Former [2011/35] | SE | 05.01.2011 | |
GR | 06.04.2011 | ||
ES | 16.04.2011 | ||
PT | 05.05.2011 | Documents cited: | Search | [Y]JPS5975622 ; | [A]JPS6021518 ; | [XY] - SATO K ET AL, "Low temperature growth of epitaxial AlN films on sapphire", IEEE 1985 ULTRASONICS SYMPOSIUM. PROCEEDINGS. (CAT. NO.85CH2209-5) IEEE NEW YORK, NY, USA, (1985), pages 192 - 197 vol.1, XP008064693 [X] 1,4,7,8 * page 192, paragraph ABSTRACT * * page 193, column 1, line 37 - column 2, line 15; figure 2 * * page 196, column 1, lines 22-41; figures 7,9 * * page 197, lines 33-35 * * page 193, column 1, lines 15-21 * [Y] 2,3,5,6 | [Y] - PATENT ABSTRACTS OF JAPAN, (19840824), vol. 008, no. 185, Database accession no. (E - 262), & JP59075622 A 19840428 (NIHON SANSO KK) [Y] 2,3,5,6 * abstract * | [A] - PATENT ABSTRACTS OF JAPAN, (19850614), vol. 009, no. 140, Database accession no. (E - 321), & JP60021518 A 19850202 (NIPPON DENSHIN DENWA KOSHA) [A] 2,3,5,6 * abstract * | Examination | - KANEKO S.; TANAKA M.; MASU K.; TSUBOUCHI K.; MIKOSHIBA N., "Epitaxial growth of AlN film by low-pressure MOCVD in gas-beam-flow reactor", JOURNAL OF CRYSTAL GROWTH, Amsterdam, Netherlands, (19911201), vol. 115, ISSN 0022-0248, pages 643 - 647, XP000322870 DOI: http://dx.doi.org/10.1016/0022-0248(91)90819-Q | by applicant | JPS5975622 | JPS6021518 |