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Extract from the Register of European Patents

EP About this file: EP1197995

EP1197995 - Method for fabricating a group III nitride film [Right-click to bookmark this link]
Former [2002/16]A method for fabricating a III nitride film
[2010/30]
StatusNo opposition filed within time limit
Status updated on  11.11.2011
Database last updated on 02.09.2024
Most recent event   Tooltip27.09.2013Lapse of the patent in a contracting state
New state(s): TR		published on 30.10.2013  [2013/44]
Applicant(s)For all designated states
NGK Insulators, Ltd.
2-56, Suda-Cho, Mizuho-ku
Nagoya City, Aichi Pref. / JP
[2011/01]
Former [2002/16]For all designated states
NGK INSULATORS, LTD.
2-56, Suda-cho, Mizuho-ku
Nagoya City Aichi Pref. / JP
Inventor(s)01 / Shibata, Tomohiko, c/o NGK Insulators
2-56, Suda-cho, Mizuho-ku
Nagoya City, Aichi Pref. / JP
02 / Nakamura, Yukinori, c/o NGK Insulators
2-56, Suda-cho, Mizuho-ku
Nagoya City, Aichi Pref. / JP
03 / Tanaka, Mitsuhiro, c/o NGK Insulators
2-56, Suda-cho, Mizuho-ku
Nagoya City, Aichi Pref. / JP
 [2002/16]
Representative(s)TBK
Bavariaring 4-6
80336 München / DE
[N/P]
Former [2005/34]TBK-Patent
Bavariaring 4-6
80336 München / DE
Former [2002/16]Leson, Thomas Johannes Alois, Dipl.-Ing.
Tiedtke-Bühling-Kinne & Partner GbR, TBK-Patent, Bavariaring 4
80336 München / DE
Application number, filing date01124422.511.10.2001
[2002/16]
Priority number, dateJP2000031303313.10.2000         Original published format: JP 2000313033
[2002/16]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1197995
Date:17.04.2002
Language:EN
[2002/16]
Type: A3 Search report 
No.:EP1197995
Date:05.07.2006
[2006/27]
Type: B1 Patent specification 
No.:EP1197995
Date:05.01.2011
Language:EN
[2011/01]
Search report(s)(Supplementary) European search report - dispatched on:EP07.06.2006
ClassificationIPC:C30B25/02, C30B29/40, H01L21/205
[2010/30]
CPC:
C30B25/02 (EP,KR,US); C30B29/403 (EP,KR,US); H01L21/0242 (EP,KR,US);
H01L21/0254 (EP,KR,US); H01L21/0262 (EP,US)
Former IPC [2002/16]H01L21/205, C30B25/02
Designated contracting statesAT,   BE,   CH,   CY,   DE,   DK,   ES,   FI,   FR,   GB,   GR,   IE,   IT,   LI,   LU,   MC,   NL,   PT,   SE,   TR [2002/16]
TitleGerman:Verfahren zur Herstellung einer Schicht aus einer Nitridverbindung der Gruppe III[2002/16]
English:Method for fabricating a group III nitride film[2010/30]
French:Méthode de fabrication d'une couche en nitrure d'éléments du groupe III[2010/30]
Former [2002/16]A method for fabricating a III nitride film
Former [2002/16]Méthode de fabrication d'une couche en nitrure du groupe III
Examination procedure28.09.2006Amendment by applicant (claims and/or description)
28.09.2006Examination requested  [2006/45]
05.06.2007Despatch of a communication from the examining division (Time limit: M06)
14.12.2007Reply to a communication from the examining division
24.11.2008Despatch of a communication from the examining division (Time limit: M06)
04.05.2009Reply to a communication from the examining division
16.07.2010Communication of intention to grant the patent
19.11.2010Fee for grant paid
19.11.2010Fee for publishing/printing paid
Opposition(s)06.10.2011No opposition filed within time limit [2011/50]
Fees paidRenewal fee
30.10.2003Renewal fee patent year 03
28.10.2004Renewal fee patent year 04
26.10.2005Renewal fee patent year 05
30.10.2006Renewal fee patent year 06
31.10.2007Renewal fee patent year 07
30.10.2008Renewal fee patent year 08
29.10.2009Renewal fee patent year 09
29.10.2010Renewal fee patent year 10
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipAT05.01.2011
BE05.01.2011
CY05.01.2011
DK05.01.2011
FI05.01.2011
IT05.01.2011
NL05.01.2011
SE05.01.2011
TR05.01.2011
GR06.04.2011
ES16.04.2011
PT05.05.2011
[2013/44]
Former [2012/03]AT05.01.2011
BE05.01.2011
CY05.01.2011
DK05.01.2011
FI05.01.2011
IT05.01.2011
NL05.01.2011
SE05.01.2011
GR06.04.2011
ES16.04.2011
PT05.05.2011
Former [2011/47]AT05.01.2011
BE05.01.2011
CY05.01.2011
DK05.01.2011
FI05.01.2011
NL05.01.2011
SE05.01.2011
GR06.04.2011
ES16.04.2011
PT05.05.2011
Former [2011/40]AT05.01.2011
BE05.01.2011
CY05.01.2011
FI05.01.2011
NL05.01.2011
SE05.01.2011
GR06.04.2011
ES16.04.2011
PT05.05.2011
Former [2011/37]BE05.01.2011
CY05.01.2011
FI05.01.2011
SE05.01.2011
GR06.04.2011
ES16.04.2011
PT05.05.2011
Former [2011/35]SE05.01.2011
GR06.04.2011
ES16.04.2011
PT05.05.2011
Documents cited:Search[Y]JPS5975622  ;
 [A]JPS6021518  ;
 [XY]  - SATO K ET AL, "Low temperature growth of epitaxial AlN films on sapphire", IEEE 1985 ULTRASONICS SYMPOSIUM. PROCEEDINGS. (CAT. NO.85CH2209-5) IEEE NEW YORK, NY, USA, (1985), pages 192 - 197 vol.1, XP008064693 [X] 1,4,7,8 * page 192, paragraph ABSTRACT * * page 193, column 1, line 37 - column 2, line 15; figure 2 * * page 196, column 1, lines 22-41; figures 7,9 * * page 197, lines 33-35 * * page 193, column 1, lines 15-21 * [Y] 2,3,5,6
 [Y]  - PATENT ABSTRACTS OF JAPAN, (19840824), vol. 008, no. 185, Database accession no. (E - 262), & JP59075622 A 19840428 (NIHON SANSO KK) [Y] 2,3,5,6 * abstract *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19850614), vol. 009, no. 140, Database accession no. (E - 321), & JP60021518 A 19850202 (NIPPON DENSHIN DENWA KOSHA) [A] 2,3,5,6 * abstract *
Examination   - KANEKO S.; TANAKA M.; MASU K.; TSUBOUCHI K.; MIKOSHIBA N., "Epitaxial growth of AlN film by low-pressure MOCVD in gas-beam-flow reactor", JOURNAL OF CRYSTAL GROWTH, Amsterdam, Netherlands, (19911201), vol. 115, ISSN 0022-0248, pages 643 - 647, XP000322870

DOI:   http://dx.doi.org/10.1016/0022-0248(91)90819-Q
by applicantJPS5975622
 JPS6021518
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.