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Extract from the Register of European Patents

EP About this file: EP1215732

EP1215732 - Nonvolatile semiconductor memory device and manufacturing method thereof [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  29.04.2005
Database last updated on 14.09.2024
Most recent event   Tooltip29.04.2005Application deemed to be withdrawnpublished on 15.06.2005  [2005/24]
Applicant(s)For all designated states
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
1006, Oaza Kadoma Kadoma-shi Osaka
571-8501 / JP
For all designated states
HALO LSI DESIGN AND DEVICE TECHNOLOGIES INC.
169 Meyers Corner Road, Suite 230
Wappingers Falls, NY 12590 / US
[N/P]
Former [2002/37]For all designated states
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
1006, Oaza-Kadoma
Kadoma-shi, Osaka 571-8501 / JP
For all designated states
HALO LSI DESIGN AND DEVICE TECHNOLOGIES INC.
169 Meyers Corner Road, Suite 230
Wappingers Falls, NY 12590 / US
Former [2002/25]For all designated states
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
1006, Oaza-Kadoma
Kadoma-shi, Osaka 571-8501 / JP
For all designated states
Halo Lsi Design and Device Technology Inc.
169 Myers Corners Road, Suite 230
Wappingers Falls, NY 12590 / US
Inventor(s)01 / Sugiyama, Nobuyo
3-9-405, Matsunami-cho
Nishinomiya-shi, Hyogo 663-8102 / JP
02 / Odanaka, Shinji
1-51-12, Higashinakaburi
Hirakata-shi, Osaka 573-0093 / JP
03 / Fujimoto, Hiromasa
5-1-3-23-302, Kabutodai, Kizu-cho
Soraku-gun, Kyoto 619-0224 / JP
04 / Ogura, Seiki, Halo LSI Design and Device Tech.Inc.
169 Myers Corners Road
Suite 230 Wappingers Falls, NY 12590 / US
 [2002/25]
Representative(s)Grünecker Patent- und Rechtsanwälte PartG mbB
Leopoldstrasse 4
80802 München / DE
[N/P]
Former [2002/25]Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
Maximilianstrasse 58
80538 München / DE
Application number, filing date01129725.613.12.2001
[2002/25]
Priority number, dateJP2000038223315.12.2000         Original published format: JP 2000382233
[2002/25]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1215732
Date:19.06.2002
Language:EN
[2002/25]
Type: A3 Search report 
No.:EP1215732
Date:17.03.2004
[2004/12]
Search report(s)(Supplementary) European search report - dispatched on:EP04.02.2004
ClassificationIPC:H01L29/788
[2004/11]
CPC:
H01L29/66825 (EP,US); H01L29/788 (KR); H01L29/40114 (EP,US);
H01L29/42324 (EP,US); H01L29/7885 (EP,US)
Former IPC [2002/25]H01L29/788, H01L29/423, H01L21/336
Designated contracting states(deleted) [2004/50]
Former [2002/25]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE,  TR 
TitleGerman:Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zur Herstellung[2002/25]
English:Nonvolatile semiconductor memory device and manufacturing method thereof[2002/25]
French:Dispositif semi-conducteur de mémoire rémanent et procédé pour sa fabrication[2002/25]
Examination procedure20.09.2004Application deemed to be withdrawn, date of legal effect  [2005/24]
13.01.2005Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time  [2005/24]
Fees paidRenewal fee
23.12.2003Renewal fee patent year 03
Penalty fee
Penalty fee Rule 85a EPC 1973
27.10.2004FR   M01   Not yet paid
27.10.2004GB   M01   Not yet paid
Penalty fee Rule 85b EPC 1973
27.10.2004M01   Not yet paid
Additional fee for renewal fee
31.12.200404   M06   Not yet paid
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[XY]EP0530644  (TEXAS INSTRUMENTS INC [US]);
 [Y]US5591652  (MATSUSHITA TADASHI [JP]);
 [A]EP0905790  (MATSUSHITA ELECTRONICS CORP [JP]);
 [Y]EP0935293  (MATSUSHITA ELECTRIC IND CO LTD [JP], et al);
 [A]US6121655  (ODANAKA SHINJI [JP], et al)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.