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EP About this file: EP1107294

EP1107294 - Method for making diaphragm-based sensors and apparatus constructed therewith [Right-click to bookmark this link]
Status	The application is deemed to be withdrawn Status updated on 26.01.2007 Database last updated on 14.09.2024
Most recent event Tooltip	11.07.2008	Change - representative	published on 13.08.2008 [2008/33]
Applicant(s)	For all designated states HONEYWELL INC. Honeywell Plaza Minneapolis, MN 55408 / US
	[N/P]
Former [2001/24]	For all designated states HONEYWELL INC. Honeywell Plaza Minneapolis Minnesota 55408 / US
Inventor(s)	01 / Mirza, Amir R. 2125 Aquila Avenue Golden Valley, Minnesota 55427 / US
	02 / Stratton, Thomas G. 3000 Sany Hook Drive Roseville, Minnesota 55113 / US
	03 / Saathoff, Diedrich J. 205 Woodland Drive Burnsville, Minnesota 55337 / US
	04 / Carney, James K. 7310 Paulsen Drive Eden Prairie, Minnesota 55346 / US
	05 / Hocker, Benjamin G. 5730 Covington Circle Minnetonka, Minnesota 55345 / US
	06 / Burns, David W. 5537 1st Avenue South Minneapolis, Minnesota 55419 / US
	07 / Ikinwande, Akintunde 9968 Nord Road Minneapolis, Minnesota 55437 / US
	08 / Horning, Robert D 4 Oak Shore Drive Burnsville, Minnesota 55337 / US
	[2001/24]
Representative(s)	Fox-Male, Nicholas Vincent Humbert, et al Potter Clarkson LLP The Belgrave Centre Talbot Street Nottingham NG1 5GG / GB
	[N/P]
Former [2008/33]	Fox-Male, Nicholas Vincent Humbert, et al Potter Clarkson LLP Park View House 58 The Ropewalk Nottingham NG1 5DD / GB
Former [2001/24]	Fox-Male, Nicholas Vincent Humbert, et al Eric Potter Clarkson Park View House 58 The Ropewalk Nottingham NG1 5DD / GB
Application number, filing date	01200467.7	06.02.1992
	[2001/24]
Priority number, date	US19910652148	07.02.1991 Original published format: US 652148
	[2001/24]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP1107294
	Date:	13.06.2001
	Language:	EN
	[2001/24]
	Type:	A3 Search report
	No.:	EP1107294
	Date:	14.11.2001
	[2001/46]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	27.09.2001
Classification	IPC:	G01L9/02, G01L9/06, G01L9/00, H01L21/18, H01L21/20	[2001/28]
	CPC:	B81C1/00182 (EP,US); G01L9/0042 (EP,US); G01L9/0073 (EP,US); H01L21/2007 (EP,US); B81B2201/0292 (EP,US); B81B2203/0127 (EP,US)
	Former IPC [2001/24]	H01L21/18, H01L21/20, G01L9/00
Designated contracting states	DE, FR, GB, NL [2001/24]
Title	German:	Verfahren zur Herstellung von Diaphragma-Sensoren und somit hergestellte Vorrichtung	[2001/24]
	English:	Method for making diaphragm-based sensors and apparatus constructed therewith	[2001/24]
	French:	Procédé de fabrication de capteurs à base de diaphragmes et appareillage ainsi construit	[2001/24]
Examination procedure	22.02.2001	Examination requested [2001/24]
	28.05.2001	Despatch of communication of loss of particular rights: Claims {1}
	01.09.2006	Application deemed to be withdrawn, date of legal effect [2007/09]
	10.10.2006	Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2007/09]
Parent application(s) Tooltip	EP92300996.3 / EP0500234
	EP96115964.7 / EP0756164
Request for further processing for:	21.08.2002	Request for further processing filed
	23.08.2002	Full payment received (date of receipt of payment) Request deemed not to be filed
	13.09.2002	Decision despatched
Fees paid	Renewal fee
	22.02.2001	Renewal fee patent year 03
	22.02.2001	Renewal fee patent year 04
	22.02.2001	Renewal fee patent year 05
	22.02.2001	Renewal fee patent year 06
	22.02.2001	Renewal fee patent year 07
	22.02.2001	Renewal fee patent year 08
	22.02.2001	Renewal fee patent year 09
	22.02.2001	Renewal fee patent year 10
	04.02.2002	Renewal fee patent year 11
	06.02.2003	Renewal fee patent year 12
	04.02.2004	Renewal fee patent year 13
	04.02.2005	Renewal fee patent year 14
	Penalty fee
	Additional fee for renewal fee
	28.02.2006	15 M06 Not yet paid
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[A]EP0261972 (UNIV LELAND STANFORD JUNIOR [US]) [A] 8-10 * column 24, line 50 - line 65; figures 29-32 *;
		[A] - PETERSEN K ET AL, "SILICON FUSION BONDING: REVOLUTIONARY NEW TOOL FOR SILICON SENSORS AND MICROSTRUCTURES", WESCON TECHNICAL PAPERS, (19891101), vol. 33, pages 220 - 224, XP000116008 [A] 1-12 * page 220 - page 222; figures 2,3 *
		[A] - C.L. COHEN, "simple wafer fusion builds better power chips", ELECTRONICS., VNU BUSINESS PUBLICATIONS, NEW YORK., US, (198512), vol. 58, no. 51, ISSN 0883-4989, pages 20 - 21, XP000820534 [A] 1-7,12 * the whole document *
		[A] - BENGTSSON S ET AL, "INTERFACE CHARGE CONTROL OF DIRECTLY BONDED SILICON STRUCTURES", JOURNAL OF APPLIED PHYSICS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, (19890801), vol. 66, no. 3, ISSN 0021-8979, pages 1231 - 1239, XP000039852 [A] 1-7,12 * page 1234, column L, paragraph 1 * DOI: http://dx.doi.org/10.1063/1.343469
		[A] - BENGTSSON S ET AL, "LOW-TEMPERATURE PREPARATION OF SILICON/SILICON INTERFACES BY THE SILICON-TO-SILICON DIRECT BONDING METHOD", JOURNAL OF THE ELECTROCHEMICAL SOCIETY,US,ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE, (19900701), vol. 137, no. 7, ISSN 0013-4651, pages 2297 - 2303, XP000138086 [A] 1-7,11 * page 2297, column L, paragraph 1 - column R, paragraph 2 * * page 2299, column R, paragraph 1 *
		[A] - MASZARA W P ET AL, "BONDING OF SILICON WAFERS FOR SILICON-ON-INSULATOR", JOURNAL OF APPLIED PHYSICS,AMERICAN INSTITUTE OF PHYSICS. NEW YORK,US, (19881115), vol. 64, no. 10, PART 1, ISSN 0021-8979, pages 4943 - 4950, XP000050002 [A] 7 * page 4946, column L, paragraph 2 * DOI: http://dx.doi.org/10.1063/1.342443
		[PA] - QUENZER H J ET AL, "LOW-TEMPERATURE SILICON WAFER BONDING", SENSORS AND ACTUATORS A,CH,ELSEVIER SEQUOIA S.A., LAUSANNE, (19920401), vol. A32, no. 1 / 03, ISSN 0924-4247, pages 340 - 344, XP000287353 [PA] 8-10 * the whole document * DOI: http://dx.doi.org/10.1016/0924-4247(92)80009-R
		[DA] - MASAYOSHI ESASHI ET AL, "LOW-TEMPERATURE SILICON-TO-SILICON ANODIC BONDING WITH INTERMEDIATE LOW MELTING POINT GLASS", SENSORS AND ACTUATORS A,CH,ELSEVIER SEQUOIA S.A., LAUSANNE, (19900401), vol. A23, no. 1 / 03, ISSN 0924-4247, pages 931 - 934, XP000355796 [DA] 8-10 * the whole document *

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