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Extract from the Register of European Patents

EP About this file: EP1128548

EP1128548 - FET bias circuit [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  08.08.2008
Database last updated on 20.09.2024
Most recent event   Tooltip08.08.2008No opposition filed within time limitpublished on 10.09.2008  [2008/37]
Applicant(s)For all designated states
JAPAN RADIO CO., LTD
1-1, Shimorenjaku 5-chome Mitaka-shi
Tokyo 181-8510 / JP
[2007/40]
Former [2001/35]For all designated states
JAPAN RADIO CO., LTD
1-1, Shimorenjaku 5-chome
Mitaka-shi, Tokyo 181-8510 / JP
Inventor(s)01 / Sakamoto Hironori, c/o Japan Radio Co. Ltd.
1-1, Shimorenjaku 5-chome
Mitaka-shi, Tokyo 181-8510 / JP
02 / Honda, Tamaki, c/o Japan Radio Co. Ltd.
1-1, Shimorenjaku 5-chome
Mitaka-shi, Tokyo 181-8510 / JP
03 / Takahashi, Taketo, c/o Japan Radio Co. Ltd.
1-1, Shimorenjaku 5-chome
Mitaka-shi, Tokyo 181-8510 / JP
 [2001/35]
Representative(s)McLeish, Nicholas Alistair Maxwell, et al
Boult Wade Tennant
Verulam Gardens
70 Gray's Inn Road
London WC1X 8BT / GB
[N/P]
Former [2001/35]McLeish, Nicholas Alistair Maxwell, et al
Boult Wade Tennant Verulam Gardens 70 Gray's Inn Road
London WC1X 8BT / GB
Application number, filing date01300842.031.01.2001
[2001/35]
Priority number, dateJP2000004531223.02.2000         Original published format: JP 2000045312
[2001/35]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1128548
Date:29.08.2001
Language:EN
[2001/35]
Type: A3 Search report 
No.:EP1128548
Date:15.01.2003
[2003/03]
Type: B1 Patent specification 
No.:EP1128548
Date:03.10.2007
Language:EN
[2007/40]
Search report(s)(Supplementary) European search report - dispatched on:EP29.11.2002
ClassificationIPC:H03F1/30
[2001/35]
CPC:
H03F1/306 (EP,US); H03F1/30 (KR); H03F2200/447 (EP,US);
H03F2200/75 (EP,US)
Designated contracting statesDE,   FI,   FR,   GB,   SE [2003/40]
Former [2001/35]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE,  TR 
TitleGerman:Vorspannungsschaltung für einen Feldeffekttransistor[2001/35]
English:FET bias circuit[2001/35]
French:Circuit de polarisation pour un transistor à effet de champ[2001/35]
Examination procedure03.03.2003Examination requested  [2003/18]
16.03.2006Despatch of a communication from the examining division (Time limit: M04)
22.05.2006Reply to a communication from the examining division
16.04.2007Communication of intention to grant the patent
16.08.2007Fee for grant paid
16.08.2007Fee for publishing/printing paid
Opposition(s)04.07.2008No opposition filed within time limit [2008/37]
Fees paidRenewal fee
23.12.2002Renewal fee patent year 03
24.11.2003Renewal fee patent year 04
26.01.2005Renewal fee patent year 05
18.01.2006Renewal fee patent year 06
18.01.2007Renewal fee patent year 07
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Documents cited:Search[X]US5808515  (TSURUOKA YOSHIYASU [JP], et al) [X] 1 * column 4, line 51 - column 6, line 17; figure 1 *;
 [A]EP0942524  (NOKIA MOBILE PHONES LTD [FI]) [A] 2,3 * column A; figure 3 * * column 3, paragraph 11 *;
 [A]  - GALLUZZI P, "VOLTAGE LIMITER IS 523 TEMPERATUR STABLE", ELECTRONIC DESIGN, PENTON PUBLISHING, CLEVELAND, OH, US, (19891012), vol. 37, no. 21, ISSN 0013-4872, page 86, XP000076210 [A] 2 * column W *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.