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EP1170397
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EP About this file: EP1170397
| EP1170397 - Deposition of amorphous silicon films by high density plasma CVD at low temperatures [Right-click to bookmark this link] | Status | The application has been refused Status updated on 10.01.2014 Database last updated on 01.01.2025 | Most recent event Tooltip | 10.01.2014 | Refusal of application | published on 12.02.2014 [2014/07] | Applicant(s) | For all designated states Applied Materials, Inc. 3050 Bowers Avenue Santa Clara, CA 95054 / US | [N/P] |
| Former [2002/02] | For all designated states Applied Materials, Inc. 3050 Bowers Avenue Santa Clara, California 95054 / US | Inventor(s) | 01 /
Li, Zhang 533 South Park San Jose, California 95129 / US | 02 /
Rossman, Kent 440 Navaro Place No. 118 San Jose, California 95134 / US | 03 /
Yiin, Tzuyuan 1900 Tiani Ct San Jose, California 95131 / US | [2002/13] |
| Former [2002/02] | 01 /
Li, Zhang 533 South Park San Jose, California 95129 / US | ||
| 02 /
Rossman, Kent 440 Navaro Place No. 118 San Jose, California 95134 / US | |||
| 03 /
Yiin, Tzuyuan 1504 Ambergrove Drive San Jose, California 95131 / US | Representative(s) | Boult Wade Tennant LLP Salisbury Square House 8 Salisbury Square London EC4Y 8AP / GB | [N/P] |
| Former [2013/51] | Boult Wade Tennant Verulam Gardens 70 Gray's Inn Road London WC1X 8BT / GB | ||
| Former [2004/34] | Setna, Rohan P., et al Boult Wade Tennant Verulam Gardens 70 Gray's Inn Road London WC1X 8BT / GB | ||
| Former [2002/02] | Allard, Susan Joyce, et al BOULT WADE TENNANT, Verulam Gardens 70 Gray's Inn Road London WC1X 8BT / GB | Application number, filing date | 01305828.4 | 05.07.2001 | [2002/02] | Priority number, date | US20000216865P | 07.07.2000 Original published format: US 216865 P | [2002/02] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1170397 | Date: | 09.01.2002 | Language: | EN | [2002/02] | Type: | A3 Search report | No.: | EP1170397 | Date: | 10.12.2003 | [2003/50] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 23.10.2003 | Classification | IPC: | C23C16/24, C23C16/507, H01L21/205 | [2002/02] | CPC: |
H01L21/02667 (EP,KR,US);
H01L21/0262 (EP,KR,US);
C23C16/24 (EP,KR,US);
C23C16/507 (EP,KR,US);
H01L21/02532 (EP,KR,US);
H01L21/02592 (KR)
| Designated contracting states | DE, GB [2004/36] |
| Former [2002/02] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR | Title | German: | Abscheidung amorpher Siliziumschichten bei niedrigen Temperaturen mittels CVD mit hoher Plasmadichte | [2002/02] | English: | Deposition of amorphous silicon films by high density plasma CVD at low temperatures | [2002/02] | French: | Dépôt à température basse de couches de silicium amorphe par CVD au plasma haute densité | [2002/02] | Examination procedure | 09.06.2004 | Examination requested [2004/33] | 14.08.2009 | Despatch of a communication from the examining division (Time limit: M04) | 17.12.2009 | Reply to a communication from the examining division | 23.06.2010 | Despatch of a communication from the examining division (Time limit: M04) | 29.07.2010 | Reply to a communication from the examining division | 06.09.2011 | Despatch of a communication from the examining division (Time limit: M04) | 16.01.2012 | Reply to a communication from the examining division | 28.08.2013 | Cancellation of oral proceeding that was planned for 26.09.2013 | 26.09.2013 | Date of oral proceedings (cancelled) | 27.09.2013 | Despatch of communication that the application is refused, reason: substantive examination [2014/07] | 08.10.2013 | Application refused, date of legal effect [2014/07] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 14.08.2009 | Fees paid | Renewal fee | 23.05.2003 | Renewal fee patent year 03 | 09.07.2004 | Renewal fee patent year 04 | 08.07.2005 | Renewal fee patent year 05 | 10.07.2006 | Renewal fee patent year 06 | 04.07.2007 | Renewal fee patent year 07 | 10.07.2008 | Renewal fee patent year 08 | 08.07.2009 | Renewal fee patent year 09 | 08.07.2010 | Renewal fee patent year 10 | 07.07.2011 | Renewal fee patent year 11 | 06.07.2012 | Renewal fee patent year 12 | 08.07.2013 | Renewal fee patent year 13 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JPH03108318 ; | [A]JPS6113616 ; | [XA]US5204272 (GUHA SUBHENDU [US], et al) [X] 1-4,6 * column 9, line 6 - line 20 * [A] 5,7-17; | [A]GB2311298 (HYUNDAI ELECTRONICS IND [KR], et al) [A] 1-17 * page 8, line 10 - page 9, line 1 *; | [A]US6083344 (HANAWA HIROJI [US], et al) [A] 5,7-17 * column 5, line 43 - line 58 *; | [PX]WO0074932 (PENN STATE RES FOUND [US], et al) [PX] 1-4,6* page 12, line 26 - page 14, line 20 *; | [A] - PATENT ABSTRACTS OF JAPAN, (19910805), vol. 015, no. 304, Database accession no. (E - 1096), & JP03108318 A 19910508 (NEC CORP) [A] 1-17 * abstract * | [A] - PATENT ABSTRACTS OF JAPAN, (19860606), vol. 010, no. 158, Database accession no. (E - 409), & JP61013616 A 19860121 (FUJITSU KK) [A] 5,7-17 * abstract * | [A] - KATO I ET AL, "INFLUENCE OF ION BOMBARDMENT ON A-SI: H FILMS FABRICATED BY PLASMA CHEMICAL VAPOR DEPOSITION", ELECTRONICS & COMMUNICATIONS IN JAPAN, PART II - ELECTRONICS, SCRIPTA TECHNICA. NEW YORK, US, (19950201), vol. 78, no. 2, ISSN 8756-663X, pages 70 - 77, XP000526348 [A] 1-17 * paragraph [0002] * | Examination | EP0883166 |