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EP1264339
European procedure
Extract from the Register of European Patents
EP About this file: EP1264339
| EP1264339 - METHOD FOR PRODUCTION OF SIMOX SUBSTRATE [Right-click to bookmark this link] | |||
| Former [2002/50] | SIMOX SUBSTRATE AND METHOD FOR PRODUCTION THEREOF | ||
| [2009/40] | Status | No opposition filed within time limit Status updated on 25.03.2011 Database last updated on 20.07.2024 | Most recent event Tooltip | 25.03.2011 | No opposition filed within time limit | published on 27.04.2011 [2011/17] | Applicant(s) | For all designated states Nippon Steel Corporation 6-3, Ohtemachi-2-chome Chiyoda-ku Tokyo 100-8071 / JP | [N/P] |
| Former [2010/20] | For all designated states Nippon Steel Corporation 6-3, Ohtemachi-2-chome Chiyoda-ku Tokyo 100-8071 / JP | ||
| Former [2002/50] | For all designated states NIPPON STEEL CORPORATION 6-3, Ohtemachi-2-chome Chiyoda-ku Tokyo 100-8071 / JP | Inventor(s) | 01 /
KAWAMURA, Keisuke, c/o NIPPON STEEL CORPORATION Technical Development Bureau, 20-1, Shintomi Futtsu-shi, Chiba 293-8511 / JP | 02 /
MATSUMURA, Atsuki, c/o NIPPON STEEL CORPORATION Technical Development Bureau, 20-1, Shintomi Futtsu-shi, Chiba 293-8511 / JP | 03 /
MIZUTANI, Toshiyuki, c/o NIPPON STEEL CORPORATION Technical Development Bureau, 20-1, Shintomi Futtsu-shi, Chiba 293-8511 / JP | [2002/50] | Representative(s) | Vossius & Partner Patentanwälte Rechtsanwälte mbB Siebertstrasse 3 81675 München / DE | [N/P] |
| Former [2008/35] | Vossius & Partner Siebertstrasse 3 81675 München / DE | ||
| Former [2002/50] | VOSSIUS & PARTNER Siebertstrasse 4 81675 München / DE | Application number, filing date | 01908249.4 | 02.03.2001 | [2002/50] | WO2001JP01622 | Priority number, date | JP20000066839 | 10.03.2000 Original published format: JP 2000066839 | JP20000188259 | 22.06.2000 Original published format: JP 2000188259 | [2002/50] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO0167510 | Date: | 13.09.2001 | Language: | EN | [2001/37] | Type: | A1 Application with search report | No.: | EP1264339 | Date: | 11.12.2002 | Language: | EN | The application published by WIPO in one of the EPO official languages on 13.09.2001 takes the place of the publication of the European patent application. | [2002/50] | Type: | B1 Patent specification | No.: | EP1264339 | Date: | 19.05.2010 | Language: | EN | [2010/20] | Search report(s) | International search report - published on: | EP | 13.09.2001 | Classification | IPC: | H01L21/762, H01L21/265 | [2002/50] | CPC: |
H01L21/26533 (EP,US);
H01L21/265 (KR);
H01L21/324 (EP,US);
H01L21/76227 (EP,US);
H01L21/76243 (EP,US)
| Designated contracting states | DE, FR, GB, IT [2002/50] | Title | German: | HERSTELLUNGSVERFAHREN FÜR SIMOX SUBSTRAT | [2009/40] | English: | METHOD FOR PRODUCTION OF SIMOX SUBSTRATE | [2009/40] | French: | PROCEDE DE PRODUCTION DU SUBSTRAT SIMOX | [2009/40] |
| Former [2002/50] | SIMOX SUBSTRAT UND DESSEN HERSTELLUNGSVERFAHREN | ||
| Former [2002/50] | SIMOX SUBSTRATE AND METHOD FOR PRODUCTION THEREOF | ||
| Former [2002/50] | SUBSTRAT SIMOX ET PROCEDE DE PRODUCTION DUDIT SUBSTRAT | Entry into regional phase | 02.10.2002 | National basic fee paid | 02.10.2002 | Designation fee(s) paid | 02.10.2002 | Examination fee paid | Examination procedure | 17.09.2001 | Request for preliminary examination filed International Preliminary Examining Authority: EP | 03.09.2002 | Amendment by applicant (claims and/or description) | 02.10.2002 | Examination requested [2002/50] | 21.12.2007 | Despatch of a communication from the examining division (Time limit: M04) | 21.04.2008 | Reply to a communication from the examining division | 18.06.2009 | Despatch of a communication from the examining division (Time limit: M02) | 05.08.2009 | Reply to a communication from the examining division | 21.09.2009 | Communication of intention to grant the patent | 01.02.2010 | Fee for grant paid | 01.02.2010 | Fee for publishing/printing paid | Opposition(s) | 22.02.2011 | No opposition filed within time limit [2011/17] | Fees paid | Renewal fee | 31.03.2003 | Renewal fee patent year 03 | 31.03.2004 | Renewal fee patent year 04 | 31.03.2005 | Renewal fee patent year 05 | 30.03.2006 | Renewal fee patent year 06 | 29.03.2007 | Renewal fee patent year 07 | 31.03.2008 | Renewal fee patent year 08 | 31.03.2008 | Renewal fee patent year 09 | 24.03.2010 | Renewal fee patent year 10 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [XY]JPH1197377 ; | [XY]JPH1079356 ; | [X]JPH10223551 ; | [YD]EP0675534 (KOMATSU DENSHI KINZOKU KK [JP], et al) [YD] 8,9,11-18 * abstract *; | [A]EP0704892 (NIPPON STEEL CORP [JP]) [A] 1-20* abstract *; | US6074928 [ ] (OGURA ATSUSHI [JP]) [ ] * abstract *; | [XY] - PATENT ABSTRACTS OF JAPAN, (19990730), vol. 1999, no. 09, & JP11097377 A 19990409 (NEC CORP) [X] 1-5,19 * abstract * [Y] 12-18 | [XY] - PATENT ABSTRACTS OF JAPAN, (19980630), vol. 1998, no. 08, & JP10079356 A 19980324 (KOMATSU DENSHI KINZOKU KK) [X] 6,7,10,19 * abstract * [Y] 8,9,11 | [X] - PATENT ABSTRACTS OF JAPAN, (19981130), vol. 1998, no. 13, & JP10223551 A 19980821 (NEC CORP) [X] 6,7,19 | [X] - MATSUMURA A ET AL, "Recent progress in low-dose SIMOX wafers fabricated with internal-thermal-oxidation (ITOX) process", PROCEEDINGS OF THE NINTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES. (ELECTROCHEMICAL SOCIETY PROCEEDINGS VOL.99-3), PROCEEDINGS OF SILICON-ON INSULATOR TECHNOLOGY AND DEVICES, SEATTLE, WA, USA, 2-7 MAY 1999, 1999, Pennington, NJ, USA, Electrochem. Soc, USA, ISBN 1-56677-225-7, pages 79 - 92, XP001015302 [X] 20 * abstract * * page 80, paragraph 6 - page 81, paragraph 1 * | Examination | US6316337 |