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Extract from the Register of European Patents

EP About this file: EP1303870

EP1303870 - HIGH PRESSURE PROCESSING CHAMBER FOR SEMICONDUCTOR SUBSTRATE [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  20.06.2008
Database last updated on 14.09.2024
Most recent event   Tooltip20.06.2008Application deemed to be withdrawnpublished on 23.07.2008  [2008/30]
Applicant(s)For all designated states
TOKYO ELECTRON LIMITED
3-6 Akasaka, 5-chome, Minato-ku
Tokyo 107-8481 / JP
[N/P]
Former [2003/17]For all designated states
Tokyo Electron Limited
3-6 Akasaka, 5-chome, Minato-ku
Tokyo 107-8481 / JP
Inventor(s)01 / BIBERGER, Maximilian, Albert
7258 E. Del Acero Drive
Scottsdale, Arizona 85258 / US
02 / LAYMAN, Frederick, Paul
433 Miwok Court
Fremont, CA 94538 / US
03 / SUTTON, Thomas, Robert
1790 Chevalier Drive
San Jose, CA 95124 / US
 [2003/27]
Former [2003/17]01 / BIBERGER, Maximilian, Albert
737-6 Loma Verde Avenue
Palo Alto, CA 94302 / US
02 / LAYMAN, Frederick, Paul
433 Miwok Court
Fremont, CA 94538 / US
03 / SUTTON, Thomas, Robert
1790 Chevalier Drive
San Jose, CA 95124 / US
Representative(s)Goddar, Heinz J.
Boehmert & Boehmert
Anwaltspartnerschaft mbB
Pettenkoferstrasse 22
80336 München / DE
[N/P]
Former [2003/17]Goddar, Heinz J., Dr.
FORRESTER & BOEHMERT Pettenkoferstrasse 20-22
80336 München / DE
Application number, filing date01970053.324.07.2001
[2003/17]
WO2001IB01761
Priority number, dateUS20000220883P26.07.2000         Original published format: US 220883 P
US20010283132P10.04.2001         Original published format: US 283132 P
[2003/17]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report
No.:WO0209147
Date:31.01.2002
Language:EN
[2002/05]
Type: A2 Application without search report 
No.:EP1303870
Date:23.04.2003
Language:EN
The application published by WIPO in one of the EPO official languages on 31.01.2002 takes the place of the publication of the European patent application.
[2003/17]
Search report(s)International search report - published on:EP18.07.2002
ClassificationIPC:H01L21/00
[2003/17]
CPC:
H01L21/67126 (EP,US); H01L21/00 (KR); H01L21/67051 (EP,US);
H01L21/67748 (EP,US); H01L21/67751 (EP,US)
Designated contracting statesAT,   BE,   CH,   CY,   DE,   DK,   ES,   FI,   FR,   GB,   GR,   IE,   IT,   LI,   LU,   MC,   NL,   PT,   SE,   TR [2003/17]
Extension statesALNot yet paid
LTNot yet paid
LVNot yet paid
MKNot yet paid
RONot yet paid
SINot yet paid
TitleGerman:HOCHDRUCKSBEHANDLUNGSKAMMER FÜR HALBLEITERSCHEIBEN[2003/17]
English:HIGH PRESSURE PROCESSING CHAMBER FOR SEMICONDUCTOR SUBSTRATE[2003/17]
French:CHAMBRE DE TRAITEMENT HAUTE PRESSION POUR SUBSTRAT SEMI-CONDUCTEUR[2003/17]
Entry into regional phase23.01.2003National basic fee paid 
23.01.2003Designation fee(s) paid 
23.01.2003Examination fee paid 
Examination procedure22.02.2002Request for preliminary examination filed
International Preliminary Examining Authority: EP
23.01.2003Examination requested  [2003/17]
11.04.2006Despatch of a communication from the examining division (Time limit: M04)
03.08.2006Reply to a communication from the examining division
01.02.2008Application deemed to be withdrawn, date of legal effect  [2008/30]
10.03.2008Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time  [2008/30]
Fees paidRenewal fee
14.07.2003Renewal fee patent year 03
14.07.2004Renewal fee patent year 04
13.07.2005Renewal fee patent year 05
26.07.2006Renewal fee patent year 06
Penalty fee
Additional fee for renewal fee
31.07.200707   M06   Not yet paid
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Cited inInternational search[XA]JP2000106358  ;
 [XY]US5314574  (TAKAHASHI NOBUAKI [JP]) [X] 1,4,5,7,10,14 * figures 5-7 * * column 5, line 48 - column 6, line 44 * * column 7, lines 22-31 * [Y] 15;
 [YA]US5328722  (GHANAYEM STEVE [US], et al) [Y] 15 * the whole document * [A] 1,7-9,14;
 [XA]US5955140  (SMITH DOUGLAS M [US], et al) [X] 1,6,14 * figures 16A-17B * * page 26, line 64 - page 27, line 10 * * page 31, lines 11-13 * [A] 15-17;
 [PXA]WO0110733  (S C FLUIDS INC [US]) [PX] 1,14 * the whole document * [AP] 15;
 [PXA]WO0133615  (SUPERCRITICAL SYSTEMS INC [US]) [PX] 1,14 * page 10, lines 28-36 *[AP] 15
 [XA]  - PATENT ABSTRACTS OF JAPAN, (20000929), vol. 2000, no. 07, & JP2000106358 A 20000411 (MITSUBISHI ELECTRIC CORP) [X] 1,14 * abstract * [A] 15
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.