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EP1340254
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EP About this file: EP1340254
| EP1340254 - DRAM WITH VERTICAL TRANSISTOR AND TRENCH CAPACITOR MEMORY CELLS AND METHOD OF FABRICATION [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 10.06.2005 Database last updated on 20.07.2024 | Most recent event Tooltip | 10.06.2005 | Withdrawal of application | published on 27.07.2005 [2005/30] | Applicant(s) | For all designated states Infineon Technologies North America Corp. 1730 North First Street San Jose, CA 95112-4508 / US | [2003/36] | Inventor(s) | 01 /
PRAIKASH, Jai, V., C. 1000 Escalon Avenue E204 Sunnyvale, CA 94085 / US | 02 /
SEITZ, Mihel Patty-Frank-Weg 18 01445 Redebeul / DE | 03 /
ARNOLD, Norbert 25 Keith Drive Chestnut Ridge, NY 12560 / US | [2003/50] |
| Former [2003/36] | 01 /
JAIPRAKASH, V., C. 39 c. Hudson View Drive Beacon, NY 12508 / US | ||
| 02 /
SEITZ, Michel 32 Nicole Drive Wappingers Falls, NY 12560 / US | |||
| 03 /
ARNOLD, Norbert 25 Keith Drive Chestnut Ridge, NY 12560 / US | Representative(s) | Epping - Hermann - Fischer Patentanwaltsgesellschaft mbH Schlossschmidstrasse 5 80639 München / DE | [N/P] |
| Former [2003/36] | Epping Hermann & Fischer Ridlerstrasse 55 80339 München / DE | Application number, filing date | 01991947.1 | 14.11.2001 | [2003/36] | WO2001US43959 | Priority number, date | US20000731343 | 06.12.2000 Original published format: US 731343 | [2003/36] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | WO0247159 | Date: | 13.06.2002 | Language: | EN | [2002/24] | Type: | A2 Application without search report | No.: | EP1340254 | Date: | 03.09.2003 | Language: | EN | The application published by WIPO in one of the EPO official languages on 13.06.2002 takes the place of the publication of the European patent application. | [2003/36] | Search report(s) | International search report - published on: | EP | 22.05.2003 | Classification | IPC: | H01L21/8242 | [2003/36] | CPC: |
H10B12/0385 (EP,US)
| Designated contracting states | DE, FR, GB, IE, IT [2004/21] |
| Former [2003/36] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR | Title | German: | DRAM MIT VERTIKALTRANSISTOR- UND GRABENKONDENSATORSPEICHERZELLEN UND VERFAHREN ZUR HERSTELLUNG DESSELBEN | [2003/36] | English: | DRAM WITH VERTICAL TRANSISTOR AND TRENCH CAPACITOR MEMORY CELLS AND METHOD OF FABRICATION | [2003/36] | French: | RAM DYNAMIQUE AVEC UN TRANSISTOR VERTICAL ET CELLULES DE CONDENSATEUR MEMOIRE DE TRANCHEES, ET PROCEDE DE FABRICATION CORRESPONDANT | [2003/36] | Entry into regional phase | 27.05.2003 | National basic fee paid | 27.05.2003 | Designation fee(s) paid | 27.05.2003 | Examination fee paid | Examination procedure | 27.06.2002 | Request for preliminary examination filed International Preliminary Examining Authority: EP | 27.05.2003 | Amendment by applicant (claims and/or description) | 27.05.2003 | Examination requested [2003/36] | 07.06.2005 | Application withdrawn by applicant [2005/30] | Fees paid | Renewal fee | 21.11.2003 | Renewal fee patent year 03 | 22.11.2004 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [X]JPH05291528 ; | [X]US5519236 (OZAKI TOHRU [JP]) [X] 1-6 * column W *; | [PX]US6284593 (MANDELMAN JACK A [US], et al) [PX] 1-10 * column A; figures 13A-13C *; | [E]DE10038728 (INFINEON TECHNOLOGIES AG [DE]) [E] 1-10 * abstract * | [X] - PATENT ABSTRACTS OF JAPAN, (19940209), vol. 018, no. 080, Database accession no. (E - 1505), & JP05291528 A 19931105 (TOSHIBA CORP) [X] 1-6 * abstract * |