-
EP1261036
European procedure
- EP About this file
- EP Legal status
- EP Federated register
- EP Event history
- EP Citations
- EP Patent family
- EP All documents
Extract from the Register of European Patents
EP About this file: EP1261036
| EP1261036 - Power MOSFET semiconductor device and method of manufacturing the same [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 01.01.2010 Database last updated on 03.09.2024 | Most recent event Tooltip | 01.01.2010 | Application deemed to be withdrawn | published on 03.02.2010 [2010/05] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 1-1, Shibaura 1-chome, Minato-ku Tokyo / JP | [N/P] |
| Former [2002/48] | For all designated states Kabushiki Kaisha Toshiba 1-1, Shibaura 1-chome, Minato-ku Tokyo / JP | Inventor(s) | 01 /
Izumisawa, Masaru, Intellectual Property Division Kabushiki Kaisha Toshiba, 1-1, Shibaura 1-chome Minato-ku, Tokyo 105-8001 / JP | 02 /
Kouzuki, Shigeo, Intellectual Property Division Kabushiki Kaisha Toshiba, 1-1, Shibaura 1-chome Minato-ku, Tokyo 105-8001 / JP | 03 /
Hodama, Shinichi, Intellectual Property Division Kabushiki Kaisha Toshiba, 1-1, Shibaura 1-chome Minato-ku, Tokyo 105-8001 / JP | [2002/48] | Representative(s) | Hoffmann Eitle Patent- und Rechtsanwälte PartmbB Arabellastrasse 30 81925 München / DE | [N/P] |
| Former [2002/48] | HOFFMANN - EITLE Patent- und Rechtsanwälte Arabellastrasse 4 81925 München / DE | Application number, filing date | 02011514.3 | 22.05.2002 | [2002/48] | Priority number, date | JP20010157485 | 25.05.2001 Original published format: JP 2001157485 | [2002/48] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1261036 | Date: | 27.11.2002 | Language: | EN | [2002/48] | Type: | A3 Search report | No.: | EP1261036 | Date: | 28.07.2004 | [2004/31] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 15.06.2004 | Classification | IPC: | H01L29/78, H01L21/336 | [2004/31] | CPC: |
H01L29/7802 (EP,US);
H01L29/78 (KR);
H01L29/0634 (EP,US);
H01L29/66712 (EP,US);
H01L21/26586 (EP,US);
H01L29/0653 (EP,US);
H01L29/0847 (EP,US)
(-)
|
| Former IPC [2002/48] | H01L29/78, H01L29/08, H01L29/06, H01L21/336 | Designated contracting states | DE, FR, GB, IT [2005/16] |
| Former [2002/48] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR | Title | German: | Leistungs-MOSFET-Halbleiteranordnung und Verfahren zu deren Herstellung | [2002/48] | English: | Power MOSFET semiconductor device and method of manufacturing the same | [2002/48] | French: | Dispositif semi-conducteur MOSFET de puissance et sa méthode de fabrication | [2002/48] | Examination procedure | 22.05.2002 | Examination requested [2002/48] | 23.06.2005 | Despatch of a communication from the examining division (Time limit: M06) | 30.12.2005 | Reply to a communication from the examining division | 02.03.2009 | Despatch of a communication from the examining division (Time limit: M04) | 13.08.2009 | Application deemed to be withdrawn, date of legal effect [2010/05] | 18.09.2009 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2010/05] | Fees paid | Renewal fee | 13.05.2004 | Renewal fee patent year 03 | 12.05.2005 | Renewal fee patent year 04 | 23.03.2006 | Renewal fee patent year 05 | 14.05.2007 | Renewal fee patent year 06 | 28.03.2008 | Renewal fee patent year 07 | 12.05.2009 | Renewal fee patent year 08 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]GB2089118 (PHILIPS ELECTRONIC ASSOCIATED) [X] 1-3,6-13,16-21 * page 3, column 2, line 68 - page 4, column 1, line 14; figures 1,4 *; | [X]DE19604043 (SIEMENS AG [DE]) [X] 1,4,5,7-11,14,15,17-21 * abstract * * column 3, line 44 - column 4, line 40; figures 1,2,6 *; | [XA]DE19748523 (SIEMENS AG [DE]) [X] 1,4-7,9-11,14-18,20,21 * abstract * * column 4, line 33 - column 6, line 18; figures 3-5 * [A] 22-28; | [XA] - NITTA T ET AL, "EXPERIMENTAL RESULTS AND SIMULATION ANALYSIS OF 250V SUPER TRENCH POWER MOSFET (STM)", 12TH. INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S.ISPSD 2000. PROCEEDINGS. TOULOUSE, FRANCE, MAY 22 - 25, 2000, INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S, NEW YORK, NY: IEEE, US, (20000522), ISBN 0-7803-6269-1, pages 77 - 80, XP000987837 [X] 1,2,7-10 * the whole document * [A] 22-28 DOI: http://dx.doi.org/10.1109/ISPSD.2000.856777 |