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EP1348778
European procedure
Extract from the Register of European Patents
EP About this file: EP1348778
| EP1348778 - Method for obtaining high quality InGaAsN semiconductor [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 12.01.2007 Database last updated on 12.11.2024 | Most recent event Tooltip | 12.01.2007 | No opposition filed within time limit | published on 14.02.2007 [2007/07] | Applicant(s) | For all designated states Avago Technologies ECBU IP (Singapore) Pte. Ltd. No. 1 Yishun Avenue 7 Singapore 768923 / SG | [N/P] |
| Former [2006/52] | For all designated states Avago Technologies ECBU IP (Singapore) Pte. Ltd. No 1 Yishun Avenue 7 Singapore 768923 / SG | ||
| Former [2006/10] | For all designated states Agilent Technologies, Inc. 395 Page Mill Road Palo Alto CA 94306 / US | ||
| Former [2003/40] | For all designated states Agilent Technologies, Inc. 395 Page Mill Road Palo Alto, CA 94306 / US | Inventor(s) | 01 /
Takeuchi, Tetsuya 3500 Deer Creek Road, M/S 26M-10 Palo Alto, CA 94304 / US | 02 /
Chang, Ying-Lan 3500 Deer Creek Road, M/S 26-M-10 Palo Alto, CA 94304 / US | 03 /
Bour, David P. 3500 Deer Creek Road, M/S 26M-10 Palo Alto, CA 94304 / US | 04 /
leary, Michael H. 3500 Deer Creek Road, M/S 26M-10 Palo Alto, CA 94304 / US | 05 /
Tan, Michael R. T. 3500 Deer Creek Road, M/S 26M-10 Palo Alto, CA 94304 / US | 06 /
Luan, Andy 350 Trimble Avenue, M/S 90UB San Jose, CA 95131 / US | [2003/40] | Representative(s) | Liesegang, Eva, et al Boehmert & Boehmert Anwaltspartnerschaft mbB Pettenkoferstrasse 22 80336 München / DE | [N/P] |
| Former [2003/40] | Liesegang, Eva, et al Forrester & Boehmert, Pettenkoferstrasse 20-22 80336 München / DE | Application number, filing date | 02023298.9 | 17.10.2002 | [2003/40] | Priority number, date | US20020106472 | 25.03.2002 Original published format: US 106472 | [2003/40] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP1348778 | Date: | 01.10.2003 | Language: | EN | [2003/40] | Type: | B1 Patent specification | No.: | EP1348778 | Date: | 08.03.2006 | Language: | EN | [2006/10] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 05.06.2003 | Classification | IPC: | C23C16/30, C30B25/02, H01L21/205 | [2003/40] | CPC: |
C30B25/02 (EP,US);
C23C16/301 (EP,US);
C23C16/4401 (EP,US);
C23C16/4405 (EP,US);
C30B29/403 (EP,US);
H01L21/02395 (EP,US);
H01L21/02463 (EP,US);
H01L21/02507 (EP,US);
H01L21/0254 (EP,US);
| Designated contracting states | DE, FR, GB [2004/26] |
| Former [2003/40] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, SK, TR | Title | German: | Verfahren zur Herstellung eines InGaAsN Halbleiters mit hoher Qualität | [2005/41] | English: | Method for obtaining high quality InGaAsN semiconductor | [2003/40] | French: | Méthode pour obtenir un semiconducteur InGaAsN de haute qualité | [2003/40] |
| Former [2003/40] | Verfahren zur Herstellung eines hochqualitativen InGaAsN Halbleiters | Examination procedure | 03.03.2004 | Examination requested [2004/19] | 14.04.2005 | Despatch of a communication from the examining division (Time limit: M04) | 11.08.2005 | Reply to a communication from the examining division | 12.09.2005 | Communication of intention to grant the patent | 05.01.2006 | Fee for grant paid | 05.01.2006 | Fee for publishing/printing paid | Opposition(s) | 11.12.2006 | No opposition filed within time limit [2007/07] | Fees paid | Renewal fee | 25.10.2004 | Renewal fee patent year 03 | 27.10.2005 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US5944913 (HOU HONG Q [US], et al) [A] 1-6* the whole document *; | [X]WO0152373 (INFINEON TECHNOLOGIES AG [DE], et al) [X] 1,6 * page 4, lines 4-18 * * page 5, lines 19-26 *; | [DXAY] - HEROUX J B ET AL, "GALNNAS RESONANT-CAVITY-ENHANCED PHOTODETECTOR OPERATING AT 1.3 MUM", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (19991101), vol. 75, no. 18, ISSN 0003-6951, pages 2716 - 2718, XP000875922 [DX] 1,2,6 * figure 1 * [A] 5 [Y] 4 DOI: http://dx.doi.org/10.1063/1.125126 | [DX] - R.R. KING ET AL, "NEXT-GENERATION , HIGH-EFFICIENCY III-V MUTLIJUNCTION SOLAR CELLS", 28TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, (2000), pages 998 - 1001, XP001151872 [DX] 1,3 * figure 1 * * page 999, column L, line 26 * | [Y] - MIYAMOTO T ET AL, "CBE and MOCVD growth of GaInNAs", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, (200002), vol. 209, no. 2-3, ISSN 0022-0248, pages 339 - 344, XP004186701 [Y] 4 * abstract * DOI: http://dx.doi.org/10.1016/S0022-0248(99)00567-9 |