Extract from the Register of European Patents

EP About this file: EP1296358

EP1296358 - Process for producing semiconductor substrates [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  23.02.2007
Database last updated on 14.03.2026
Most recent event   Tooltip23.02.2007Application deemed to be withdrawnpublished on 28.03.2007  [2007/13]
Applicant(s)For all designated states
CATALYSTS & CHEMICALS INDUSTRIES CO., LTD.
580 Horikawa-cho, Saiwai-ku Kawasaki-shi
Kanagawa 210-0013 / JP
[N/P]
Former [2003/13]For all designated states
Catalysts & Chemicals Industries Co., Ltd.
580 Horikawa-cho, Saiwai-ku
Kawasaki-shi, Kanagawa 210-0013 / JP
Inventor(s)01 / Egami, Miki, c/o Wakamatsu Plant, Catalyst & Chem.
Ind. Co., Ltd, 13-1 Kitaminato-machi, Wakamatsu-ku
Kitakyushu-shi, Fukuoka 808-0027 / JP
02 / Muraguchi, Ryo, Wakamatsu Plant, Catalyst & Chem.
Ind. Co., Ltd, 13-1 Kitaminato-machi, Wakamatsu-ku
Kitakyushu-shi, Fukuoka 808-0027 / JP
 [2003/13]
Representative(s)Thomson, James Burgess
Dehns
St Bride's House
10 Salisbury Square
London
EC4Y 8JD / GB
[N/P]
Former [2003/13]Thomson, James B.
Frank B. Dehn & Co. 179 Queen Victoria Street
London EC4V 4EL / GB
Application number, filing date02256469.418.09.2002
[2003/13]
Priority number, dateJP2001028925821.09.2001         Original published format: JP 2001289258
[2003/13]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1296358
Date:26.03.2003
Language:EN
[2003/13]
Type: A3 Search report 
No.:EP1296358
Date:04.01.2006
[2006/01]
Search report(s)(Supplementary) European search report - dispatched on:EP18.11.2005
ClassificationIPC:H01L21/00, H01L21/31, C23C18/00
[2003/13]
CPC:
C23C18/1212 (EP,US); H10P14/60 (KR); C23C18/122 (EP);
H10P14/6534 (EP,US); H10P14/6682 (EP,US); H10P95/062 (EP,US);
H10P95/08 (EP,US); H10P14/6342 (EP,US); H10P14/6689 (EP,US);
H10P14/6922 (EP,US); H10P72/0424 (EP,US) (-)
Designated contracting states(deleted) [2006/36]
Former [2003/13]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE,  SK,  TR 
TitleGerman:Herstellungsverfahren für Halbleitersubstrate[2003/13]
English:Process for producing semiconductor substrates[2003/13]
French:Procédé de fabrication de substrats semiconducteurs[2003/13]
Examination procedure05.07.2006Application deemed to be withdrawn, date of legal effect  [2007/13]
31.10.2006Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time  [2007/13]
Fees paidRenewal fee
28.09.2004Renewal fee patent year 03
23.09.2005Renewal fee patent year 04
Penalty fee
Penalty fee Rule 85a EPC 1973
14.08.2006DE   M01   Not yet paid
14.08.2006FR   M01   Not yet paid
14.08.2006IT   M01   Not yet paid
14.08.2006NL   M01   Not yet paid
Penalty fee Rule 85b EPC 1973
14.08.2006M01   Not yet paid
Additional fee for renewal fee
30.09.200605   M06   Not yet paid
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Documents cited:Search[XY] US5939139  (FUJIMOTO AKIHIRO et al.) [X] 1,3-9 * abstract *[Y] 2
 [XY] US4510176  (CUTHBERT JOHN D et al.) [X] 1,3-9 * column 6; claim 1 *[Y] 2
 [Y] EP0890623  (CATALYSTS & CHEM IND CO et al.) [Y] 2 * abstract *
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