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Extract from the Register of European Patents

EP About this file: EP1308780

EP1308780 - Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  17.11.2006
Database last updated on 03.10.2024
Most recent event   Tooltip09.11.2007Change - lapse in a contracting state
State(s) deleted from list of lapses: IT		published on 12.12.2007  [2007/50]
Applicant(s)For all designated states
ASML MaskTools B.V.
De Run 6501
5504 DR Veldhoven / NL
For all designated states
ASML Netherlands B.V.
De Run 6501
5504 DR Veldhoven / NL
[N/P]
Former [2004/39]For all designated states
ASML MaskTools B.V.
De Run 6501
5504 DR Veldhoven / NL
For all designated states
ASML Netherlands B.V.
De Run 6501
5504 DR Veldhoven / NL
Former [2003/19]For all designated states
ASML Masktools B.V.
De Run 1110
5503 LA Veldhoven / NL
For all designated states
ASML Netherlands B.V.
De Run 1110
5503 LA Veldhoven / NL
Inventor(s)01 / Capodieci, Luigi
315 Van Ness Avenue
Santa Cruz, CA 95060 / US
02 / Torres Robles, Juan Andres
29499 SW Maedows Loop, No. 269
Wilsonville, OR 97070 / US
03 / Van Os, Lodewijk Hubertus
Stevertsemolen 20
5612 DT Eindhoven / NL
 [2003/19]
Representative(s)Leeming, John Gerard
J A Kemp
14 South Square
Gray's Inn
London WC1R 5JJ / GB
[N/P]
Former [2003/19]Leeming, John Gerard
J.A. Kemp & Co., 14 South Square, Gray's Inn
London WC1R 5JJ / GB
Application number, filing date02257624.304.11.2002
[2003/19]
Priority number, dateUS2001098562105.11.2001         Original published format: US 985621
[2003/19]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1308780
Date:07.05.2003
Language:EN
[2003/19]
Type: A3 Search report 
No.:EP1308780
Date:14.01.2004
[2004/03]
Type: B1 Patent specification 
No.:EP1308780
Date:11.01.2006
Language:EN
[2006/02]
Search report(s)(Supplementary) European search report - dispatched on:EP03.12.2003
ClassificationIPC:G03F7/20
[2004/03]
CPC:
G03F1/70 (EP,US); H01L21/027 (KR); G03F1/36 (EP,US);
G03F7/70125 (EP,US); G03F7/70425 (EP,US); G03F7/70466 (EP,US)
Former IPC [2003/19]G03F1/08
Designated contracting statesDE,   FR,   GB,   IT,   NL [2004/41]
Former [2003/19]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE,  SK,  TR 
TitleGerman:Verfahren und Vorrichtung zur Herstellung von Masken zur Benutzung mit Dipolbelichtung[2003/19]
English:Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques[2003/19]
French:Méthode et appareil de fabrication de masques utilisés conjointement à des techniques d'illumination dipolaire[2005/21]
Former [2003/19]Méthode et apparail de fabrication de masques utilisés conjointement à des techniques d'illumination dipolaire
Examination procedure01.03.2004Examination requested  [2004/18]
29.04.2004Despatch of a communication from the examining division (Time limit: M04)
01.09.2004Reply to a communication from the examining division
17.05.2005Communication of intention to grant the patent
12.09.2005Fee for grant paid
12.09.2005Fee for publishing/printing paid
Opposition(s)12.10.2006No opposition filed within time limit [2006/51]
Fees paidRenewal fee
05.11.2004Renewal fee patent year 03
14.11.2005Renewal fee patent year 04
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  Tooltipdeleted
[2007/50]
Former [2007/38]IT11.01.2006
Documents cited:Search[A]JP2000311853  ;
 [A]US5472814  (LIN BURN J [US]) [A] 1,9-11,15 * abstract * * column 4, line 9 - line 18 * * column 5, line 20 - column 6, line 62 *;
 [A]WO0025181  (HITACHI LTD [JP], et al) [A] 1,9-11,15 * abstract *;
 [A]WO0067075  (MENTOR GRAPHICS CORP [US]) [A] 1-6,14 * abstract * * claims 1-9,17 *;
 US6518180  [ ] (FUKUDA HIROSHI [JP]) [ ] * abstract ** column 2, line 19 - column 6, line 51 *;
 [XP]  - HSU S D ET AL, "Dipole decomposition mask design for full-chip implementation at 100 nm technology node and beyond", OPTICAL MICROLITHOGRAPHY XV, SANTA CLARA, CA, USA, 5-8 MARCH 2002, Proceedings of the SPIE - The International Society for Optical Engineering, 2002, SPIE-Int. Soc. Opt. Eng, USA, vol. 4691, ISSN 0277-786X, pages 476 - 490, XP002261072 [XP] 1-16 * the whole document *

DOI:   http://dx.doi.org/10.1117/12.474596
 [XP]  - TORRES J A ET AL, "Model-assisted double dipole decomposition", OPTICAL MICROLITHOGRAPHY XV, SANTA CLARA, CA, USA, 5-8 MARCH 2002, Proceedings of the SPIE - The International Society for Optical Engineering, 2002, SPIE-Int. Soc. Opt. Eng, USA, vol. 4691, ISSN 0277-786X, pages 407 - 417, XP002261073 [XP] 1-16 * the whole document *

DOI:   http://dx.doi.org/10.1117/12.474589
 [XP]  - TORRES J A ET AL, "Design verification flow for model assisted double dipole decomposition", DESIGN, PROCESS INTEGRATION, AND CHARACTERIZATION FOR MICROELECTRONICS, SANTA CLARA, CA, USA, 6-7 MARCH 2002, Proceedings of the SPIE - The International Society for Optical Engineering, 2002, SPIE-Int. Soc. Opt. Eng, USA, vol. 4692, ISSN 0277-786X, pages 585 - 592, XP002261074 [XP] 1-16 * the whole document *

DOI:   http://dx.doi.org/10.1117/12.475695
 [A]  - EURLINGS M ET AL, "0.11- mu m imaging in KrF lithography using dipole illumination", LITHOGRAPHY FOR SEMICONDUCTOR MANUFACTURING II, EDINBURGH, UK, 30 MAY-1 JUNE 2001, Proceedings of the SPIE - The International Society for Optical Engineering, 2001, SPIE-Int. Soc. Opt. Eng, USA, vol. 4404, ISSN 0277-786X, pages 266 - 278, XP009020880 [A] 1,9-11,13,15,16 * abstract * * page 275 - page 278; figures 13,14 *

DOI:   http://dx.doi.org/10.1117/12.425215
 [A]  - SEO-MIN KIM ET AL, "Optimization of dipole off-axis illumination by 1st-order efficiency method for sub-120 nm node with KrF lithography", DIGEST OF PAPERS MICROPROCESSES AND NANOTECHNOLOGY 2000. 2000 INTERNATIONAL MICROPROCESSES AND NANOTECHNOLOGY CONFERENCE, TOKYO, JAPAN, 11-13 JULY 2000, Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers), Dec. 2000, Japan Soc. Appl. Phys, Japan, vol. 39, no. 12B, ISSN 0021-4922, pages 6777 - 6780, XP002261075 [A] 1,9-11,16 * abstract * * page 6777, column 1 * * page 6779 - page 6780 *

DOI:   http://dx.doi.org/10.1143/JJAP.39.6777
 [A]  - PATENT ABSTRACTS OF JAPAN, (20010305), vol. 2000, no. 14, & JP2000311853 A 20001107 (NIKON CORP) [A] 1,9-11,16 * abstract *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.