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Extract from the Register of European Patents

EP About this file: EP1261085

EP1261085 - High power semiconductor laser diode [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  11.05.2007
Database last updated on 31.08.2024
Most recent event   Tooltip11.05.2007No opposition filed within time limitpublished on 13.06.2007  [2007/24]
Applicant(s)For all designated states
Bookham Technology plc
Caswell Towcester
Northamptonshire NN12 8EQ / GB
[N/P]
Former [2006/04]For all designated states
Bookham Technology plc
Caswell, Towcester
Northhamptonshire, NN12 8EQ / GB
Former [2003/32]For all designated states
Bookham Technology PLC
90 Milton Park
Abingdon, Oxfordshire OX14 4RY / GB
Former [2002/48]For all designated states
Nortel Networks Optical Components (Switzerland) GmbH
Binzstrasse 17
8045 Zürich / CH
Inventor(s)01 / Schmidt, Berthold
Kappeliweg 7
8703 Erlenbach/ZH / CH
02 / Pawlik, Susanne
Pflanzschulstrasse 91
8004 Zürich / CH
03 / Thies, Achim
Idastrasse 50
8003 Zürich / CH
04 / Harder, Christoph
Seeblickstrasse 60
8038 Zürich / CH
 [2002/48]
Representative(s)Barth, Carl Otto
ABACUS Patentanwälte Klocke Späth Barth Zürichstrasse 34
8134 Adliswil/Zürich / CH
[N/P]
Former [2002/48]Barth, Carl Otto, Dipl.-Ing.
Barth & Partner Zürichstrasse 34
8134 Adliswil/Zürich / CH
Application number, filing date02405380.308.05.2002
[2002/48]
Priority number, dateUS2001085299410.05.2001         Original published format: US 852994
[2002/48]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1261085
Date:27.11.2002
Language:EN
[2002/48]
Type: A3 Search report 
No.:EP1261085
Date:19.11.2003
[2003/47]
Type: B1 Patent specification 
No.:EP1261085
Date:05.07.2006
Language:EN
[2006/27]
Search report(s)(Supplementary) European search report - dispatched on:EP06.10.2003
ClassificationIPC:H01S5/22, H01S5/16
[2002/48]
CPC:
H01S5/22 (EP,US); H01S2301/176 (EP); H01S5/02476 (EP);
H01S5/04254 (EP,US); H01S5/168 (EP,US); H01S5/2216 (EP,US);
H01S5/32316 (EP,US) (-)
Designated contracting statesDE,   FR,   GB [2004/33]
Former [2002/48]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE,  TR 
TitleGerman:Hochleistungshalbleiterdiodenlaser[2002/48]
English:High power semiconductor laser diode[2002/48]
French:Laser à diode à semiconducteur à haute puissance[2002/48]
Examination procedure13.05.2004Amendment by applicant (claims and/or description)
13.05.2004Examination requested  [2004/29]
15.10.2004Despatch of a communication from the examining division (Time limit: M04)
15.02.2005Reply to a communication from the examining division
13.10.2005Communication of intention to grant the patent
08.02.2006Fee for grant paid
08.02.2006Fee for publishing/printing paid
Opposition(s)10.04.2007No opposition filed within time limit [2007/24]
Fees paidRenewal fee
13.05.2004Renewal fee patent year 03
12.05.2005Renewal fee patent year 04
10.05.2006Renewal fee patent year 05
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Rights in Rem or Legal Means of ExecutionID:01
For:all designated states
Date:30.10.2003
[2004/41]
Documents cited:Search[A]EP0373933  (TOSHIBA KK [JP]) [A] 1-13 * abstract *;
 [X]US5844931  (SAGAWA MISUZU [JP], et al) [X] 1-13 * column 4, line 36 - column 5, line 13; figures 5-7 *;
 [A]US6200837  (IHN TAE HYUNG [KR], et al) [A] 12,13* abstract *;
 [A]  - HORIE H ET AL, "THERMAL ROLLOVER CHARACTERISTICS UP TO 150 øC OF BURIED-STRIPE TYPE 980-NM LASER DIODES WITH A CURRENT INJECTION WINDOW DELINEATEDBY A SINX LAYER", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, (200001), vol. 12, no. 1, ISSN 1041-1135, pages 13 - 15, XP000912606 [A] 1-13 * the whole document *

DOI:   http://dx.doi.org/10.1109/68.817431
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.