EP1261085 - High power semiconductor laser diode [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 11.05.2007 Database last updated on 31.08.2024 | Most recent event Tooltip | 11.05.2007 | No opposition filed within time limit | published on 13.06.2007 [2007/24] | Applicant(s) | For all designated states Bookham Technology plc Caswell Towcester Northamptonshire NN12 8EQ / GB | [N/P] |
Former [2006/04] | For all designated states Bookham Technology plc Caswell, Towcester Northhamptonshire, NN12 8EQ / GB | ||
Former [2003/32] | For all designated states Bookham Technology PLC 90 Milton Park Abingdon, Oxfordshire OX14 4RY / GB | ||
Former [2002/48] | For all designated states Nortel Networks Optical Components (Switzerland) GmbH Binzstrasse 17 8045 Zürich / CH | Inventor(s) | 01 /
Schmidt, Berthold Kappeliweg 7 8703 Erlenbach/ZH / CH | 02 /
Pawlik, Susanne Pflanzschulstrasse 91 8004 Zürich / CH | 03 /
Thies, Achim Idastrasse 50 8003 Zürich / CH | 04 /
Harder, Christoph Seeblickstrasse 60 8038 Zürich / CH | [2002/48] | Representative(s) | Barth, Carl Otto ABACUS Patentanwälte Klocke Späth Barth Zürichstrasse 34 8134 Adliswil/Zürich / CH | [N/P] |
Former [2002/48] | Barth, Carl Otto, Dipl.-Ing. Barth & Partner Zürichstrasse 34 8134 Adliswil/Zürich / CH | Application number, filing date | 02405380.3 | 08.05.2002 | [2002/48] | Priority number, date | US20010852994 | 10.05.2001 Original published format: US 852994 | [2002/48] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1261085 | Date: | 27.11.2002 | Language: | EN | [2002/48] | Type: | A3 Search report | No.: | EP1261085 | Date: | 19.11.2003 | [2003/47] | Type: | B1 Patent specification | No.: | EP1261085 | Date: | 05.07.2006 | Language: | EN | [2006/27] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 06.10.2003 | Classification | IPC: | H01S5/22, H01S5/16 | [2002/48] | CPC: |
H01S5/22 (EP,US);
H01S2301/176 (EP);
H01S5/02476 (EP);
H01S5/04254 (EP,US);
H01S5/168 (EP,US);
H01S5/2216 (EP,US);
H01S5/32316 (EP,US)
(-)
| Designated contracting states | DE, FR, GB [2004/33] |
Former [2002/48] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR | Title | German: | Hochleistungshalbleiterdiodenlaser | [2002/48] | English: | High power semiconductor laser diode | [2002/48] | French: | Laser à diode à semiconducteur à haute puissance | [2002/48] | Examination procedure | 13.05.2004 | Amendment by applicant (claims and/or description) | 13.05.2004 | Examination requested [2004/29] | 15.10.2004 | Despatch of a communication from the examining division (Time limit: M04) | 15.02.2005 | Reply to a communication from the examining division | 13.10.2005 | Communication of intention to grant the patent | 08.02.2006 | Fee for grant paid | 08.02.2006 | Fee for publishing/printing paid | Opposition(s) | 10.04.2007 | No opposition filed within time limit [2007/24] | Fees paid | Renewal fee | 13.05.2004 | Renewal fee patent year 03 | 12.05.2005 | Renewal fee patent year 04 | 10.05.2006 | Renewal fee patent year 05 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Rights in Rem or Legal Means of Execution | ID: | 01 | For: | all designated states | Date: | 30.10.2003 | [2004/41] | Documents cited: | Search | [A]EP0373933 (TOSHIBA KK [JP]) [A] 1-13 * abstract *; | [X]US5844931 (SAGAWA MISUZU [JP], et al) [X] 1-13 * column 4, line 36 - column 5, line 13; figures 5-7 *; | [A]US6200837 (IHN TAE HYUNG [KR], et al) [A] 12,13* abstract *; | [A] - HORIE H ET AL, "THERMAL ROLLOVER CHARACTERISTICS UP TO 150 øC OF BURIED-STRIPE TYPE 980-NM LASER DIODES WITH A CURRENT INJECTION WINDOW DELINEATEDBY A SINX LAYER", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, (200001), vol. 12, no. 1, ISSN 1041-1135, pages 13 - 15, XP000912606 [A] 1-13 * the whole document * DOI: http://dx.doi.org/10.1109/68.817431 |