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Extract from the Register of European Patents

EP About this file: EP1361616

EP1361616 - COMPOUND SEMICONDUCTOR ELEMENT BASED ON GROUP III ELEMENT NITRIDE [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  31.12.2010
Database last updated on 02.11.2024
Most recent event   Tooltip31.12.2010Application deemed to be withdrawnpublished on 02.02.2011  [2011/05]
Applicant(s)For all designated states
TOYODA GOSEI CO., LTD.
1, Aza-Nagahata, Ohaza-ochiai, Haruhi-cho Nishikasugai-gun
Aichi 452-8564 / JP
[N/P]
Former [2003/46]For all designated states
Toyoda Gosei Co., Ltd.
1, Aza-Nagahata, Ohaza-ochiai, Haruhi-cho
Nishikasugai-gun, Aichi 452-8564 / JP
Inventor(s)01 / CHIYO, Toshiaki, Toyoda Gosei Co. Ltd.
1, AzaNaga hata, Oaza Ochiai, Haruhi-cho
Nishikasugai-gun, Aichi 452-8564 / JP
02 / ITO, Jun, Toyoda Gosei Co., Ltd.
1, Aza Nagahata, Oaza Ochiai, Haruhi-cho
Nishikasugai-gun, Aichi 452-8564 / JP
03 / SHIBATA, Naoki, Toyoda Gosei Co. Ltd.
1, Aza Nagahata, Oaza Ochiai, Haruhi-cho
Nishikasugai-gun, Aichi 452-8564 / JP
 [2003/46]
Representative(s)Kramer Barske Schmidtchen Patentanwälte PartG mbB
European Patent Attorneys
Landsberger Strasse 300
80687 München / DE
[N/P]
Former [2008/39]Kramer - Barske - Schmidtchen
European Patent Attorneys Landsberger Strasse 300
80687 München / DE
Former [2004/26]Kramer - Barske - Schmidtchen
European Patent Attorneys Patenta Radeckestrasse 43
81245 München / DE
Former [2003/46]Blumbach, Kramer & Partner GbR
Radeckestrasse 43
81245 München / DE
Application number, filing date02715722.110.01.2002
[2003/46]
WO2002JP00098
Priority number, dateJP2001000703815.01.2001         Original published format: JP 2001007038
[2003/46]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO02056393
Date:18.07.2002
Language:EN
[2002/29]
Type: A1 Application with search report 
No.:EP1361616
Date:12.11.2003
Language:EN
The application published by WIPO in one of the EPO official languages on 18.07.2002 takes the place of the publication of the European patent application.
[2003/46]
Search report(s)International search report - published on:JP18.07.2002
(Supplementary) European search report - dispatched on:EP01.03.2007
ClassificationIPC:H01L21/20, H01L33/00, H01L21/203, H01L21/205, C30B29/40
[2007/14]
CPC:
H01L21/0237 (EP,US); H01L33/0093 (EP,US); H01L21/02381 (EP,US);
H01L21/0242 (EP,US); H01L21/02458 (EP,US); H01L21/02491 (EP,US);
H01L21/02505 (EP,US); H01L21/0254 (EP,US); H01L33/007 (EP,US) (-)
Former IPC [2003/46]H01L33/00, H01L21/203, H01L21/205, C30B29/40
Designated contracting statesDE,   FR,   GB [2004/22]
Former [2003/46]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE,  TR 
Extension statesALNot yet paid
LTNot yet paid
LVNot yet paid
MKNot yet paid
RONot yet paid
SINot yet paid
TitleGerman:ZUSAMMENGESETZTES HALBLEITERELEMENT AUF DER GRUNDLAGE VON NITRID DES ELEMENTS DER GRUPPE III[2003/46]
English:COMPOUND SEMICONDUCTOR ELEMENT BASED ON GROUP III ELEMENT NITRIDE[2003/46]
French:ELEMENT SEMI-CONDUCTEUR COMPOSE A BASE DE NITRURE DU GROUPE III DES ELEMENTS[2003/46]
Entry into regional phase10.07.2003Translation filed 
10.07.2003National basic fee paid 
10.07.2003Search fee paid 
10.07.2003Designation fee(s) paid 
10.07.2003Examination fee paid 
Examination procedure08.05.2002Request for preliminary examination filed
International Preliminary Examining Authority: JP
10.07.2003Examination requested  [2003/46]
31.05.2007Despatch of a communication from the examining division (Time limit: M04)
28.09.2007Reply to a communication from the examining division
03.08.2010Application deemed to be withdrawn, date of legal effect  [2011/05]
06.09.2010Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time  [2011/05]
Fees paidRenewal fee
30.01.2004Renewal fee patent year 03
28.01.2005Renewal fee patent year 04
30.01.2006Renewal fee patent year 05
30.01.2007Renewal fee patent year 06
30.01.2008Renewal fee patent year 07
28.01.2009Renewal fee patent year 08
Penalty fee
Additional fee for renewal fee
31.01.201009   M06   Not yet paid
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[X]US6100545  (CHIYO TOSHIAKI [JP], et al) [X] 1-10 * column 10, line 20 - column 12, line 27; figures 18-22 *;
 [E]WO0207233  (TOYODA GOSEI KK [JP], et al) [E] 1-10 * the whole document *;
 [A]  - H. CORDES, Y. A. CHANG, "Interfacial Reactions and Electrical Porperties of Ti/n-GaN Contacts", MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, (1997), vol. 2, XP009079428 [A] 1-10 * the whole document *
 [A]  - REN JIAN Z ET AL, "Atomic structure and phase transitions in disordered Ti1-xGaxN thin films grown by pulsed laser deposition", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (19980615), vol. 83, no. 12, ISSN 0021-8979, pages 7613 - 7617, XP012044402 [A] 1-10 * the whole document *

DOI:   http://dx.doi.org/10.1063/1.367877
International search[A]JPH09237938  (SHARP KK);
 [A]JPH10270802  (SHARP KK);
 [A]JPH10321954  (FUJI ELECTRIC CO LTD);
 [A]JP2000031534  (SANKEN ELECTRIC CO LTD);
 [A]JP2000049092  (MATSUSHITA ELECTRONICS CORP);
 [A]JP2000114597  (SANKEN ELECTRIC CO LTD);
 [A]JP2000243947  (SHARP KK);
 [A]EP1039555  (TOYODA GOSEI KK [JP]);
 [A]JP2000286445  (TOYODA GOSEI KK);
 [A]JPH09129921  (SHOWA DENKO KK);
 [A]JP2000349267  (CANON KK)
 [A]  - S.-H. LIM ET AL., "Structural analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN", JOURNAL OF APPLIED PHYSICS, (20001201), vol. 88, no. 11, pages 6364 - 6368, XP002950776

DOI:   http://dx.doi.org/10.1063/1.1323517
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.