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Extract from the Register of European Patents

EP About this file: EP1384260

EP1384260 - TWO-TRANSISTOR FLASH CELL HAVING VERTICAL ACCESS TRANSISTOR [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  23.03.2012
Database last updated on 13.11.2024
Most recent event   Tooltip23.03.2012Application deemed to be withdrawnpublished on 25.04.2012  [2012/17]
Applicant(s)For all designated states
NXP B.V.
High Tech Campus 60
5656 AG Eindhoven / NL
[2007/31]
Former [2004/05]For all designated states
Koninklijke Philips Electronics N.V.
Groenewoudseweg 1
5621 BA Eindhoven / NL
Inventor(s)01 / VERHAAR, Robertus, D., J.
Prof. Holstlaan 6
NL-5656 AA Eindhoven / NL
 [2004/05]
Representative(s)Schouten, Marcus Maria, et al
NXP B.V.
Intellectual Property & Licensing
High Tech Campus 60
5656 AG Eindhoven / NL
[N/P]
Former [2009/44]Schouten, Marcus Maria, et al
NXP B.V. IP & L Department High Tech Campus 32
5656 AE Eindhoven / NL
Former [2008/14]van der Veer, Johannis Leendert, et al
NXP Semiconductors Intellectual Property Department High Tech Campus 60
5656 AG Eindhoven / NL
Former [2007/01]Pennings, Johannes, et al
NXP Semiconductors Intellectual Property Department High Tech Campus 60
5656 AG Eindhoven / NL
Former [2004/05]Duijvestijn, Adrianus Johannes
Philips Intellectual Property & Standards P.O. Box 220
5600 AE Eindhoven / NL
Application number, filing date02722600.016.04.2002
[2004/05]
WO2002IB01353
Priority number, dateEP2001020143420.04.2001         Original published format: EP 01201434
[2004/05]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO02086966
Date:31.10.2002
Language:EN
[2002/44]
Type: A1 Application with search report 
No.:EP1384260
Date:28.01.2004
Language:EN
The application published by WIPO in one of the EPO official languages on 31.10.2002 takes the place of the publication of the European patent application.
[2004/05]
Search report(s)International search report - published on:EP31.10.2002
ClassificationIPC:H01L21/8247, H01L27/115
[2004/05]
CPC:
H10B69/00 (EP,US); H01L29/788 (KR); H10B41/27 (EP,US);
H10B41/35 (EP,US)
Designated contracting statesAT,   BE,   CH,   CY,   DE,   DK,   ES,   FI,   FR,   GB,   GR,   IE,   IT,   LI,   LU,   MC,   NL,   PT,   SE,   TR [2004/05]
TitleGerman:ZWEI-TRANSISTOR-FLASH-SPEICHERZELLE MIT SENKRECHTEM AUSWAHLTRANSISTOR[2004/05]
English:TWO-TRANSISTOR FLASH CELL HAVING VERTICAL ACCESS TRANSISTOR[2004/05]
French:CELLULE DE MEMOIRE FLASH A DEUX TRANSISTORS COMPORTANT UN TRANSISTOR D'ACCES VERTICAL[2004/05]
Entry into regional phase20.11.2003National basic fee paid 
20.11.2003Designation fee(s) paid 
20.11.2003Examination fee paid 
Examination procedure20.11.2003Examination requested  [2004/05]
28.11.2007Despatch of a communication from the examining division (Time limit: M04)
08.04.2008Reply to a communication from the examining division
01.11.2011Application deemed to be withdrawn, date of legal effect  [2012/17]
06.12.2011Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time  [2012/17]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  28.11.2007
Fees paidRenewal fee
03.05.2004Renewal fee patent year 03
02.05.2005Renewal fee patent year 04
02.05.2006Renewal fee patent year 05
02.05.2007Renewal fee patent year 06
02.05.2008Renewal fee patent year 07
04.05.2009Renewal fee patent year 08
03.05.2010Renewal fee patent year 09
Penalty fee
Additional fee for renewal fee
30.04.201110   M06   Not yet paid
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Cited inInternational search[A]US4905062  (ESQUIVEL AGERICO L [US], et al);
 [XA]US5049515  (TZENG JYH-CHERNG J [US]);
 [XA]US5495441  (HONG GARY [TW]);
 [XA]US5675161  (THOMAS MAMMEN [US])
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.