EP1384260 - TWO-TRANSISTOR FLASH CELL HAVING VERTICAL ACCESS TRANSISTOR [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 23.03.2012 Database last updated on 13.11.2024 | Most recent event Tooltip | 23.03.2012 | Application deemed to be withdrawn | published on 25.04.2012 [2012/17] | Applicant(s) | For all designated states NXP B.V. High Tech Campus 60 5656 AG Eindhoven / NL | [2007/31] |
Former [2004/05] | For all designated states Koninklijke Philips Electronics N.V. Groenewoudseweg 1 5621 BA Eindhoven / NL | Inventor(s) | 01 /
VERHAAR, Robertus, D., J. Prof. Holstlaan 6 NL-5656 AA Eindhoven / NL | [2004/05] | Representative(s) | Schouten, Marcus Maria, et al NXP B.V. Intellectual Property & Licensing High Tech Campus 60 5656 AG Eindhoven / NL | [N/P] |
Former [2009/44] | Schouten, Marcus Maria, et al NXP B.V. IP & L Department High Tech Campus 32 5656 AE Eindhoven / NL | ||
Former [2008/14] | van der Veer, Johannis Leendert, et al NXP Semiconductors Intellectual Property Department High Tech Campus 60 5656 AG Eindhoven / NL | ||
Former [2007/01] | Pennings, Johannes, et al NXP Semiconductors Intellectual Property Department High Tech Campus 60 5656 AG Eindhoven / NL | ||
Former [2004/05] | Duijvestijn, Adrianus Johannes Philips Intellectual Property & Standards P.O. Box 220 5600 AE Eindhoven / NL | Application number, filing date | 02722600.0 | 16.04.2002 | [2004/05] | WO2002IB01353 | Priority number, date | EP20010201434 | 20.04.2001 Original published format: EP 01201434 | [2004/05] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO02086966 | Date: | 31.10.2002 | Language: | EN | [2002/44] | Type: | A1 Application with search report | No.: | EP1384260 | Date: | 28.01.2004 | Language: | EN | The application published by WIPO in one of the EPO official languages on 31.10.2002 takes the place of the publication of the European patent application. | [2004/05] | Search report(s) | International search report - published on: | EP | 31.10.2002 | Classification | IPC: | H01L21/8247, H01L27/115 | [2004/05] | CPC: |
H10B69/00 (EP,US);
H01L29/788 (KR);
H10B41/27 (EP,US);
H10B41/35 (EP,US)
| Designated contracting states | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR [2004/05] | Title | German: | ZWEI-TRANSISTOR-FLASH-SPEICHERZELLE MIT SENKRECHTEM AUSWAHLTRANSISTOR | [2004/05] | English: | TWO-TRANSISTOR FLASH CELL HAVING VERTICAL ACCESS TRANSISTOR | [2004/05] | French: | CELLULE DE MEMOIRE FLASH A DEUX TRANSISTORS COMPORTANT UN TRANSISTOR D'ACCES VERTICAL | [2004/05] | Entry into regional phase | 20.11.2003 | National basic fee paid | 20.11.2003 | Designation fee(s) paid | 20.11.2003 | Examination fee paid | Examination procedure | 20.11.2003 | Examination requested [2004/05] | 28.11.2007 | Despatch of a communication from the examining division (Time limit: M04) | 08.04.2008 | Reply to a communication from the examining division | 01.11.2011 | Application deemed to be withdrawn, date of legal effect [2012/17] | 06.12.2011 | Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2012/17] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 28.11.2007 | Fees paid | Renewal fee | 03.05.2004 | Renewal fee patent year 03 | 02.05.2005 | Renewal fee patent year 04 | 02.05.2006 | Renewal fee patent year 05 | 02.05.2007 | Renewal fee patent year 06 | 02.05.2008 | Renewal fee patent year 07 | 04.05.2009 | Renewal fee patent year 08 | 03.05.2010 | Renewal fee patent year 09 | Penalty fee | Additional fee for renewal fee | 30.04.2011 | 10   M06   Not yet paid |
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