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EP1373278

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EP About this file: EP1373278

EP1373278 - METALLOAMIDE AND AMINOSILANE PRECURSORS FOR CVD FORMATION OF DIELECTRIC THIN FILMS [Right-click to bookmark this link]
Status	The application is deemed to be withdrawn Status updated on 05.02.2010 Database last updated on 11.09.2024
Most recent event Tooltip	05.02.2010	Application deemed to be withdrawn	published on 10.03.2010 [2010/10]
Applicant(s)	For all designated states ADVANCED TECHNOLOGY MATERIALS, INC. 7 Commerce Drive Danbury, CT 06810 / US
	[2004/01]
Inventor(s)	01 / BAUM, Thomas, H. 2 Handol Lane New Fairfield, CT 06812 / US
	02 / XU, Chongying 8 Heather Court New Milford, CT 06776 / US
	03 / HENDRIX, Bryan, C. 12 Peace Street Danbury, CT 06810 / US
	04 / ROEDER, Jeffrey, F. 4 Longmeadow Hill Road Brookfield, CT 06804 / US
	[2004/01]
Representative(s)	Schüssler, Andrea, et al Kanzlei Huber & Schüssler Truderinger Strasse 246 81825 München / DE
	[N/P]
Former [2004/01]	Schüssler, Andrea, Dr., et al Kanzlei Huber & Schüssler Truderinger Strasse 246 81825 München / DE
Application number, filing date	02728580.8	27.03.2002
	[2004/01]
	WO2002US09390
Priority number, date	US20010823196	30.03.2001 Original published format: US 823196
	US20010954831	18.09.2001 Original published format: US 954831
	[2004/01]
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO02079211
	Date:	10.10.2002
	Language:	EN
	[2002/41]
	Type:	A1 Application with search report
	No.:	EP1373278
	Date:	02.01.2004
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 10.10.2002 takes the place of the publication of the European patent application.
	[2004/01]
Search report(s)	International search report - published on:	US	10.10.2002
	(Supplementary) European search report - dispatched on:	EP	02.08.2007
Classification	IPC:	H01L21/3205, C07F7/00, C07F7/02, C07F7/10, C07F7/28, C23C8/00, H01L21/4763, H01L21/31, H01L21/469	[2007/23]
	CPC:	H01L21/28185 (EP,US); C07F7/00 (KR); C07F7/003 (EP,US); C07F7/025 (EP,US); C07F7/10 (EP,US); C23C14/08 (EP,US); (+) C23C14/083 (EP,US); C23C16/401 (EP,US); C23C16/405 (EP,US); H01L21/02142 (EP,US); H01L21/02148 (EP,US); H01L21/02164 (EP,US); H01L21/02181 (EP,US); H01L21/02219 (EP,US); H01L21/02222 (EP,US); H01L21/02271 (EP,US); H01L21/28194 (EP,US); H01L21/3125 (US); H01L21/31604 (US); H01L21/3185 (US); H01L21/02205 (EP); H01L21/0228 (EP); H01L21/28167 (EP,US); H01L29/517 (EP,US); H01L29/518 (EP,US) (-)
	Former IPC [2004/01]	C07F7/00, C07F7/02, C07F7/10, C07F7/28, C23C8/00, H01L21/3205, H01L21/4763, H01L21/31, H01L21/469
Designated contracting states	AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR [2004/01]
Extension states	AL	Not yet paid
	LT	Not yet paid
	LV	Not yet paid
	MK	Not yet paid
	RO	Not yet paid
	SI	Not yet paid
Title	German:	METALLOAMID- UND AMINOSILANVORSTUFEN FÜR DIE HERSTELLUNG DÜNNER DIELEKTRISCHER FILME DURCH CHEMISCHE ABSCHEIDUNG AUS DER GASPHASE	[2004/01]
	English:	METALLOAMIDE AND AMINOSILANE PRECURSORS FOR CVD FORMATION OF DIELECTRIC THIN FILMS	[2004/01]
	French:	PRECURSEURS DE METALLOAMIDE ET AMINOSILANE UTILISES DANS LA FORMATION PAR PROCEDE CVD DE FILMS MINCES DE DIELECTRIQUE	[2004/01]
Entry into regional phase	26.09.2003	National basic fee paid
	26.09.2003	Search fee paid
	26.09.2003	Designation fee(s) paid
	26.09.2003	Examination fee paid
Examination procedure	28.10.2002	Request for preliminary examination filed International Preliminary Examining Authority: US
	26.09.2003	Examination requested [2004/01]
	20.06.2007	Amendment by applicant (claims and/or description)
	13.10.2008	Despatch of a communication from the examining division (Time limit: M06)
	15.04.2009	Reply to a communication from the examining division
	05.05.2009	Despatch of a communication from the examining division (Time limit: M04)
	16.09.2009	Application deemed to be withdrawn, date of legal effect [2010/10]
	22.10.2009	Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2010/10]
Fees paid	Renewal fee
	31.03.2004	Renewal fee patent year 03
	30.03.2005	Renewal fee patent year 04
	31.03.2006	Renewal fee patent year 05
	11.04.2007	Renewal fee patent year 06
	14.03.2008	Renewal fee patent year 07
	13.03.2009	Renewal fee patent year 08
	Penalty fee
	Additional fee for renewal fee
	31.03.2007	06 M06 Fee paid on 14.08.2007
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[X]US5252518 (SANDHU GURTEJ S [US], et al) [X] 1-11,16,19,39 * example 1; claim 1 *;
		[X] - CHEON, JINWOO ET AL, "Gas Phase Photoproduction of Diatomic Metal Nitrides During Metal Nitride Laser Chemical Vapor Deposition", INORGANIC CHEMISTRY ( 1999 ), 38(9), 2238-2239 CODEN: INOCAJ; ISSN: 0020-1669, (19990415), XP002431398 [X] 1-11,16,19,39 * the whole document * DOI: http://dx.doi.org/10.1021/ic981365b
		[X] - BAXTER D V ET AL, "MOLECULAR ROUTES TO METAL CARBIDES, NITRIDES, AND OXIDES. 2. STUDIES OF THE AMMONOLYSIS OF METAL DIALKYLAMIDES AND HEXAMETHYLDISILYLAMIDES", CHEMISTRY OF MATERIALS, AMERICAN CHEMICAL SOCIETY, WASHINGTON, US, (19960601), vol. 8, no. 6, ISSN 0897-4756, pages 1222 - 1228, XP000626878 [X] 1-11,16,19,39 * page 1223 * DOI: http://dx.doi.org/10.1021/cm950499+
		[PX] - OHSHITA, Y. ET AL, "HfO2 growth by low-pressure chemical vapor deposition using the Hf(N(C2H5)2)4/O2 gas system", JOURNAL OF CRYSTAL GROWTH , 233(1-2), 292-297 CODEN: JCRGAE; ISSN: 0022-0248, (2001), XP004300609 [PX] 1-11,16,19,39 * the whole document * DOI: http://dx.doi.org/10.1016/S0022-0248(01)01502-0
	International search	[X]US5139825 (GORDON ROY G [US], et al);
		[X]US5252518 (SANDHU GURTEJ S [US], et al);
		[X]JPH0680413 (MARUYAMA TOSHIRO);
		[X]US5424095 (CLARK TERENCE [US], et al);
		[X]US5593741 (IKEDA YASUO [JP]);
		[X]US6159855 (VAARTSTRA BRIAN A [US])

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