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EP About this file: EP1408540

EP1408540 - PRODUCTION METHOD FOR ANNEAL WAFER AND ANNEAL WAFER [Right-click to bookmark this link]
Status	The application has been withdrawn Status updated on 02.12.2011 Database last updated on 09.07.2024
Most recent event Tooltip	02.12.2011	Withdrawal of application	published on 04.01.2012 [2012/01]
Applicant(s)	For all designated states Shin-Etsu Handotai Co., Ltd. 6-2, Ohtemachi 2-chome Chiyoda-ku Tokyo / JP
	[2009/17]
Former [2004/16]	For all designated states Shin-Etsu Handotai Co., Ltd 4-2 Marunouchi 1-chome, Chiyoda-ku Tokyo 100-0005 / JP
Inventor(s)	01 / KOBAYASHI, Norihiro, Shin-Etsu Handotai Co., Ltd. R&D Center, 13-1, Isobe 2-chome Annaka-shi, Gunma 379-0196 / JP
	02 / TAMATSUKA, Masaro, Shin Etsu Handotai Co., Ltd. R&D Center, 13-1, Isobe 2-chome Annaka-shi, Gunma 379-0196 / JP
	03 / NAGOYA, Takatoshi, Shin Etsu Handotai Co., Ltd. R&D Center, 13-1, Isobe 2-chome Annaka-shi, Gunma 379-0196 / JP
	04 / QU, Wei Feig, Shin Etsu Handotai Co., Ltd. R&D Center, 13-1, Isobe 2-chome Annaka-shi, Gunma 379-0196 / JP
	05 / TAKENO, Hiroshi, Shin Etsu Handotai Co., Ltd. R&D Center, 13-1, Isobe 2-chome Annaka-shi, Gunma 379-0196 / JP
	06 / AIHARA, Ken, Shin Etsu Handotai Co., Ltd. R&D Center, 13-1, Isobe 2-chome Annaka-shi, Gunma 379-0196 / JP
	[2004/16]
Representative(s)	Wibbelmann, Jobst Wuesthoff & Wuesthoff Patentanwälte und Rechtsanwalt PartG mbB Schweigerstrasse 2 81541 München / DE
	[N/P]
Former [2010/45]	Wibbelmann, Jobst Wuesthoff & Wuesthoff Patent- und Rechtsanwälte Schweigerstrasse 2 81541 München / DE
Former [2009/48]	Cooper, John, et al Murgitroyd & Company 165-169 Scotland Street Glasgow G5 8PL / GB
Former [2004/16]	Cooper, John, et al Murgitroyd & Company 165-169 Scotland Street Glasgow G5 8PL / GB
Application number, filing date	02741301.2	25.06.2002
	[2004/16]
	WO2002JP06367
Priority number, date	JP20010195994	28.06.2001 Original published format: JP 2001195994
	JP20020018584	28.01.2002 Original published format: JP 2002018584
	[2004/20]
Former [2004/16]	JP20010195994	28.06.2001
	JP20020185584	28.01.2002
Filing language	JA
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO03003441
	Date:	09.01.2003
	Language:	EN
	[2003/02]
	Type:	A1 Application with search report
	No.:	EP1408540
	Date:	14.04.2004
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 09.01.2003 takes the place of the publication of the European patent application.
	[2004/16]
Search report(s)	International search report - published on:	JP	09.01.2003
	(Supplementary) European search report - dispatched on:	EP	12.11.2008
Classification	IPC:	H01L21/322	[2004/16]
	CPC:	H01L21/324 (EP,US); H01L21/322 (KR); C30B29/06 (EP,US); C30B33/00 (EP,US); H01L21/3225 (EP,US)
Designated contracting states	AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR [2004/16]
Extension states	AL	Not yet paid
	LT	Not yet paid
	LV	Not yet paid
	MK	Not yet paid
	RO	Not yet paid
	SI	Not yet paid
Title	German:	HERSTELLUNGSVERFAHREN FÜR EINEN AUSHEIZ-WAFER UND AUSHEIZ-WAFER	[2004/16]
	English:	PRODUCTION METHOD FOR ANNEAL WAFER AND ANNEAL WAFER	[2004/16]
	French:	PROCEDE DE PRODUCTION DE PLAQUETTE RECUITE ET PLAQUETTE RECUITE AINSI OBTENUE	[2004/16]
Entry into regional phase	07.01.2004	Translation filed
	07.01.2004	National basic fee paid
	07.01.2004	Search fee paid
	07.01.2004	Designation fee(s) paid
	07.01.2004	Examination fee paid
Examination procedure	18.12.2002	Request for preliminary examination filed International Preliminary Examining Authority: JP
	07.01.2004	Examination requested [2004/16]
	16.11.2009	Despatch of a communication from the examining division (Time limit: M04)
	01.03.2010	Reply to a communication from the examining division
	02.12.2010	Despatch of a communication from the examining division (Time limit: M04)
	22.03.2011	Reply to a communication from the examining division
	18.11.2011	Application withdrawn by applicant [2012/01]
	26.01.2012	Date of oral proceedings
Divisional application(s)	The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 16.11.2009
Fees paid	Renewal fee
	14.06.2004	Renewal fee patent year 03
	06.06.2005	Renewal fee patent year 04
	22.05.2006	Renewal fee patent year 05
	08.06.2007	Renewal fee patent year 06
	06.03.2008	Renewal fee patent year 07
	08.05.2009	Renewal fee patent year 08
	31.03.2010	Renewal fee patent year 09
	16.06.2011	Renewal fee patent year 10
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[X]US5741717 (NAKAI TETSUYA [JP], et al) [X] 1-3,10 * column 5, line 63 - column 6, line 56; figure 2 *;
		[X]US5788763 (HAYASHI KENRO [JP], et al) [X] 1,10 * figure 1; example 1; table 2 *;
		[X]EP0889510 (SUMITOMO SITIX CORP [JP]) [X] 1-10 * abstract * * figure 13A; examples 1,4 *;
		[X]US5885905 (NADAHARA SOUICHI [US], et al) [X] 1-3,6,8,10 * column 5, line 7 - line 12 * * column 6, line 1 - line 4 * * column 6, line 20 - line 22 *;
		[X]EP0942078 (SHINETSU HANDOTAI KK [JP]) [X] 1-5,10 * paragraph [0096]; example 2 *;
		[X]US6200872 (YAMADA NAOKI [JP]) [X] 1,10 * abstract * * column 9, line 57 - line 58; figure 14 * * column 10, line 30 - line 43 *;
		[A] - HAWKINS G A ET AL, "THE EFFECT OF RAPID THERMAL ANNEALING ON THE PRECIPITATION OF OXYGEN IN SILICON", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (19890501), vol. 65, no. 9, ISSN 0021-8979, pages 3644 - 3654, XP000857112 [A] 1-10 * the whole document * DOI: http://dx.doi.org/10.1063/1.342589
	International search	[Y]JPH0745623 (KOMATSU DENSHI KINZOKU KK);
		[Y]JPH09190954 (SUMITOMO SITIX CORP);
		[Y]US5741717 (NAKAI TETSUYA [JP], et al);
		[A]JPH10303208 (TOSHIBA CORP);
		[Y]EP0942078 (SHINETSU HANDOTAI KK [JP]);
		[A]EP0954018 (SUMITOMO METAL IND [JP]);
		[Y]JP2000277527 (MITSUBISHI MATERIAL SILICON, et al);
		[Y]JP2001139396 (SHINETSU HANDOTAI KK);
		[Y] - NAKAI KATSUHIRO ET AL., "Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals", JOURNAL OF APPLIED PHYSICS, (20010415), vol. 89, no. 8, pages 4301 - 4309, XP002955035 DOI: http://dx.doi.org/10.1063/1.1356425
	Examination	- ITRS, "International Technology Roadmap for Semiconductors 2000", (2000), URL: http://www.itrs.net/Links/2000UpdateFinal/ORTC2000final.pdf

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