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Extract from the Register of European Patents

EP About this file: EP1443126

EP1443126 - SILICON MONOXIDE VAPOR DEPOSITION MATERIAL AND METHOD FOR PREPARATION THEREOF [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  13.03.2009
Database last updated on 13.07.2024
Most recent event   Tooltip13.03.2009No opposition filed within time limitpublished on 15.04.2009  [2009/16]
Applicant(s)For all designated states
OSAKA Titanium Technologies Co., Ltd.
1, Higashihama-cho
Amagasaki-shi, Hyogo 660-8533 / JP
[2008/13]
Former [2004/32]For all designated states
Sumitomo Titanium Corporation
1, Higashihamacho
Amagasaki-shi, Hyogo 660-8533 / JP
Inventor(s)01 / NISHIOKA, Kazuo
330-8, Ikejiri 3-chome
Itami-shi, Hyogo 664-0027 / JP
 [2004/32]
Representative(s)Butler, Lance
Barker Brettell LLP
First Floor, Atrium Court
15-17 Jockey's Fields
London
WC1R 4QR / GB
[N/P]
Former [2004/32]Butler, Lance
Barker Brettell 10-12 Priests Bridge
London SW15 5JE / GB
Application number, filing date02765557.013.09.2002
[2004/32]
WO2002JP09472
Priority number, dateJP2001028152417.09.2001         Original published format: JP 2001281524
[2004/32]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO03025246
Date:27.03.2003
Language:EN
[2003/13]
Type: A1 Application with search report 
No.:EP1443126
Date:04.08.2004
Language:EN
The application published by WIPO in one of the EPO official languages on 27.03.2003 takes the place of the publication of the European patent application.
[2004/32]
Type: B1 Patent specification 
No.:EP1443126
Date:07.05.2008
Language:EN
[2008/19]
Search report(s)International search report - published on:JP27.03.2003
(Supplementary) European search report - dispatched on:EP02.04.2007
ClassificationIPC:C23C14/24, C01B33/113
[2004/32]
CPC:
C23C14/24 (EP,US); C01B33/113 (KR); C23C14/10 (EP,US);
C23C14/225 (EP,US)
Designated contracting statesDE,   FR,   GB [2008/19]
Former [2004/32]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE,  SK,  TR 
Extension statesALNot yet paid
LTNot yet paid
LVNot yet paid
MKNot yet paid
RONot yet paid
SINot yet paid
TitleGerman:MATERIAL ZUR DAMPFABSCHEIDUNG VON SILICIUMMONOXID UND HERSTELLUNGSVERFAHREN DAFÜR[2004/32]
English:SILICON MONOXIDE VAPOR DEPOSITION MATERIAL AND METHOD FOR PREPARATION THEREOF[2004/32]
French:MATERIAU DE MONOXYDE DE SILICIUM POUR DEPOT PAR EVAPORATION SOUS VIDE ET PROCEDE DE PREPARATION DE CELUI-CI[2004/32]
Entry into regional phase13.04.2004Translation filed 
13.04.2004National basic fee paid 
13.04.2004Search fee paid 
13.04.2004Designation fee(s) paid 
13.04.2004Examination fee paid 
Examination procedure13.04.2004Examination requested  [2004/32]
04.07.2007Despatch of a communication from the examining division (Time limit: M04)
08.10.2007Reply to a communication from the examining division
15.11.2007Communication of intention to grant the patent
20.03.2008Fee for grant paid
20.03.2008Fee for publishing/printing paid
Opposition(s)10.02.2009No opposition filed within time limit [2009/16]
Fees paidRenewal fee
03.09.2004Renewal fee patent year 03
03.09.2005Renewal fee patent year 04
04.09.2006Renewal fee patent year 05
04.09.2007Renewal fee patent year 06
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[A]EP0216649  (KAWASAKI STEEL CO [JP]) [A] 1,2 * page 9, line 29 - page 11, line 7 * * page 11, line 25 - page 12, line 5 * * figures 1,2 *;
 [A]JP2001226113  (DEGUSSA) [A] 1,2* abstract *
International search[A]JPH05171412  (MITSUBISHI HEAVY IND LTD);
 [A]JPH09110412  (SUMITOMO SITIX CORP);
 [A]JP2001220122  (SHINETSU CHEMICAL CO);
 [A]JP4081524B  ;
 [A]JPS4022050B
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.