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EP1466370
European procedure
Extract from the Register of European Patents
EP About this file: EP1466370
| EP1466370 - METHOD OF FORMING NON-VOLATILE DUAL BIT SEMICONDUCTOR MEMORY CELL [Right-click to bookmark this link] | |||
| Former [2004/42] | NON-VOLATILE TWO-TRANSISTOR SEMICONDUCTOR MEMORY CELL AND METHOD FOR PRODUCING THE SAME | ||
| [2014/51] | Status | No opposition filed within time limit Status updated on 25.12.2015 Database last updated on 09.09.2024 | Most recent event Tooltip | 25.12.2015 | No opposition filed within time limit | published on 27.01.2016 [2016/04] | Applicant(s) | For all designated states Infineon Technologies AG Am Campeon 1-12 85579 Neubiberg / DE | [2010/22] |
| Former [2004/42] | For all designated states Infineon Technologies AG St.-Martin-Strasse 53 81669 München / DE | Inventor(s) | 01 /
TEMPEL, Georg Berggartenstr. 23 b D-01277 Dresden / DE | 02 /
SCHULER, Franz Lombaardenstraat 51 B-3000 Leuven / BE | [2004/47] |
| Former [2004/42] | 01 /
TEMPEL, Georg Maurice Despretlaan 9 B-1933 Sterrebeek / BE | ||
| 02 /
SCHULER, Franz Lombaardenstraat 51 B-3000 Leuven / BE | Representative(s) | Kindermann, Peter, et al Patentanwälte Kindermann Postfach 10 02 34 85593 Baldham / DE | [N/P] |
| Former [2015/08] | Kindermann, Peter, et al Patentanwalte Kindermann Postfach 10 02 34 85593 Baldham / DE | ||
| Former [2004/42] | Karl, Frank Patentanwälte Kindermann, Postfach 1330 85627 Grasbrunn / DE | Application number, filing date | 02791621.2 | 10.12.2002 | [2004/42] | WO2002DE04522 | Priority number, date | DE2002101304 | 15.01.2002 Original published format: DE 10201304 | [2004/42] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | WO03061014 | Date: | 24.07.2003 | Language: | DE | [2003/30] | Type: | A1 Application with search report | No.: | EP1466370 | Date: | 13.10.2004 | Language: | DE | The application published by WIPO in one of the EPO official languages on 24.07.2003 takes the place of the publication of the European patent application. | [2004/42] | Type: | B1 Patent specification | No.: | EP1466370 | Date: | 18.02.2015 | Language: | DE | [2015/08] | Search report(s) | International search report - published on: | EP | 24.07.2003 | Classification | IPC: | H01L29/792, H01L21/8246, H01L27/115, H01L29/66 | [2014/51] | CPC: |
H01L29/7923 (EP,US);
H10B43/30 (EP,US);
H01L29/66833 (EP,US);
Y10S438/954 (EP,US)
|
| Former IPC [2004/42] | H01L29/792, H01L21/8246 | Designated contracting states | DE, FR [2015/08] |
| Former [2004/42] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, SI, SK, TR | Title | German: | VERFAHREN ZUR HERSTELLUNG EINER NICHTFLÜCHTIGEN DUALBIT HALBLEITER-SPEICHERZELLE | [2014/51] | English: | METHOD OF FORMING NON-VOLATILE DUAL BIT SEMICONDUCTOR MEMORY CELL | [2014/51] | French: | PROCEDE DE FORMATION D'UNE CELLULE DE MEMOIRE NON VOLATILE A SEMI-CONDUCTEUR A DEUX BITS | [2014/51] |
| Former [2004/42] | NICHTFLÜCHTIGE HALBLEITER-SPEICHERZELLE SOWIE ZUGEHÖRIGES HERSTELLUNGSVERFAHREN | ||
| Former [2004/42] | NON-VOLATILE TWO-TRANSISTOR SEMICONDUCTOR MEMORY CELL AND METHOD FOR PRODUCING THE SAME | ||
| Former [2004/42] | CELLULE DE MEMOIRE NON VOLATILE A SEMI-CONDUCTEURS, ET PROCEDE DE PRODUCTION RELATIF A CETTE CELLULE | Entry into regional phase | 29.06.2004 | National basic fee paid | 29.06.2004 | Designation fee(s) paid | 29.06.2004 | Examination fee paid | Examination procedure | 26.07.2003 | Request for preliminary examination filed International Preliminary Examining Authority: EP | 29.06.2004 | Examination requested [2004/42] | 28.11.2006 | Despatch of a communication from the examining division (Time limit: M04) | 31.01.2007 | Reply to a communication from the examining division | 12.03.2008 | Despatch of a communication from the examining division (Time limit: M04) | 03.07.2008 | Reply to a communication from the examining division | 01.02.2011 | Despatch of a communication from the examining division (Time limit: M02) | 15.03.2011 | Reply to a communication from the examining division | 25.11.2014 | Communication of intention to grant the patent | 02.01.2015 | Fee for grant paid | 02.01.2015 | Fee for publishing/printing paid | 02.01.2015 | Receipt of the translation of the claim(s) | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 28.11.2006 | Opposition(s) | 19.11.2015 | No opposition filed within time limit [2016/04] | Fees paid | Renewal fee | 21.12.2004 | Renewal fee patent year 03 | 21.12.2005 | Renewal fee patent year 04 | 14.12.2006 | Renewal fee patent year 05 | 11.12.2007 | Renewal fee patent year 06 | 16.12.2008 | Renewal fee patent year 07 | 15.12.2009 | Renewal fee patent year 08 | 16.12.2010 | Renewal fee patent year 09 | 15.12.2011 | Renewal fee patent year 10 | 13.12.2012 | Renewal fee patent year 11 | 19.12.2013 | Renewal fee patent year 12 | 16.12.2014 | Renewal fee patent year 13 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [XY]WO0117030 (MACRONIX AMERICA INC [US]); | [Y]US6271090 (HUANG CHONG-JEN [TW], et al) | Examination | WO0118878 | EP1170800 | WO0211145 | US2002084484 | by applicant | US6011725 | WO0117030 | US6271090 | EP1170800 | WO0211145 | US2002084484 |