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Extract from the Register of European Patents

EP About this file: EP1418623

EP1418623 - Nonvolatile variable resistor, memory device, and scaling method of nonvolatile variable resistor [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  16.01.2009
Database last updated on 02.09.2024
Most recent event   Tooltip16.01.2009No opposition filed within time limitpublished on 18.02.2009  [2009/08]
Applicant(s)For all designated states
Sharp Kabushiki Kaisha
22-22, Nagaike-cho
Abeno-ku
Osaka-shi, Osaka 545-8522 / JP
[N/P]
Former [2008/11]For all designated states
Sharp Kabushiki Kaisha
22-22, Nagaike-cho Abeno-ku
Osaka-shi, Osaka 545-8522 / JP
Former [2004/20]For all designated states
Sharp Kabushiki Kaisha
22-22, Nagaike-cho, Abeno-ku
Osaka-shi, Osaka 545-8522 / JP
Inventor(s)01 / Tajiri, Masayuki
Rapport Tenri, 2613-1, Ichinomotocho
Tenri-shi Nara 632-0004 / JP
 [2004/20]
Representative(s)Müller Hoffmann & Partner
Patentanwälte mbB
St.-Martin-Straße 58
81541 München / DE
[N/P]
Former [2004/20]Müller - Hoffmann & Partner
Patentanwälte, Innere Wiener Strasse 17
81667 München / DE
Application number, filing date03025694.507.11.2003
[2004/20]
Priority number, dateJP2002032552708.11.2002         Original published format: JP 2002325527
[2004/20]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1418623
Date:12.05.2004
Language:EN
[2004/20]
Type: A3 Search report 
No.:EP1418623
Date:25.01.2006
[2006/04]
Type: B1 Patent specification 
No.:EP1418623
Date:12.03.2008
Language:EN
[2008/11]
Search report(s)(Supplementary) European search report - dispatched on:EP09.12.2005
ClassificationIPC:H01L27/10, H01L45/00
[2006/04]
CPC:
G11C13/0007 (EP,US); H10B69/00 (KR); H10B63/20 (EP,US);
H10B63/30 (EP,US); H10N70/20 (EP,US); H10N70/823 (EP,US);
H10N70/8836 (EP,US); G11C2213/31 (EP,US); G11C2213/72 (EP,US);
G11C2213/79 (EP,US); H01L28/20 (EP,US) (-)
Former IPC [2004/20]H01L27/10
Designated contracting statesDE,   FR,   GB,   IT [2006/39]
Former [2004/20]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Nichtflüchtiger variabler Widerstand, Speicherelement, und Skalierungsverfahren für einen nichtflüchtigen variablen Widerstand[2004/20]
English:Nonvolatile variable resistor, memory device, and scaling method of nonvolatile variable resistor[2004/20]
French:Résistance variable de type non volatile, dispositif de mémoire, et procédé de graduation d'une résistance variable de type non volatile[2004/20]
Examination procedure10.07.2006Examination requested  [2006/34]
14.09.2006Despatch of a communication from the examining division (Time limit: M04)
24.01.2007Reply to a communication from the examining division
24.09.2007Communication of intention to grant the patent
23.01.2008Fee for grant paid
23.01.2008Fee for publishing/printing paid
Opposition(s)15.12.2008No opposition filed within time limit [2009/08]
Fees paidRenewal fee
28.11.2005Renewal fee patent year 03
29.11.2006Renewal fee patent year 04
26.11.2007Renewal fee patent year 05
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[A]JPH02238659  ;
 [X]US6031287  (HARSHFIELD STEVEN T [US]);
 [X]WO0057498  (ENERGY CONVERSION DEVICES INC [US]);
 [DA]US6204139  (LIU SHANGQING [US], et al);
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.