EP1418623 - Nonvolatile variable resistor, memory device, and scaling method of nonvolatile variable resistor [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 16.01.2009 Database last updated on 02.09.2024 | Most recent event Tooltip | 16.01.2009 | No opposition filed within time limit | published on 18.02.2009 [2009/08] | Applicant(s) | For all designated states Sharp Kabushiki Kaisha 22-22, Nagaike-cho Abeno-ku Osaka-shi, Osaka 545-8522 / JP | [N/P] |
Former [2008/11] | For all designated states Sharp Kabushiki Kaisha 22-22, Nagaike-cho Abeno-ku Osaka-shi, Osaka 545-8522 / JP | ||
Former [2004/20] | For all designated states Sharp Kabushiki Kaisha 22-22, Nagaike-cho, Abeno-ku Osaka-shi, Osaka 545-8522 / JP | Inventor(s) | 01 /
Tajiri, Masayuki Rapport Tenri, 2613-1, Ichinomotocho Tenri-shi Nara 632-0004 / JP | [2004/20] | Representative(s) | Müller Hoffmann & Partner Patentanwälte mbB St.-Martin-Straße 58 81541 München / DE | [N/P] |
Former [2004/20] | Müller - Hoffmann & Partner Patentanwälte, Innere Wiener Strasse 17 81667 München / DE | Application number, filing date | 03025694.5 | 07.11.2003 | [2004/20] | Priority number, date | JP20020325527 | 08.11.2002 Original published format: JP 2002325527 | [2004/20] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1418623 | Date: | 12.05.2004 | Language: | EN | [2004/20] | Type: | A3 Search report | No.: | EP1418623 | Date: | 25.01.2006 | [2006/04] | Type: | B1 Patent specification | No.: | EP1418623 | Date: | 12.03.2008 | Language: | EN | [2008/11] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 09.12.2005 | Classification | IPC: | H01L27/10, H01L45/00 | [2006/04] | CPC: |
G11C13/0007 (EP,US);
H10B69/00 (KR);
H10B63/20 (EP,US);
H10B63/30 (EP,US);
H10N70/20 (EP,US);
H10N70/823 (EP,US);
H10N70/8836 (EP,US);
G11C2213/31 (EP,US);
G11C2213/72 (EP,US);
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Former IPC [2004/20] | H01L27/10 | Designated contracting states | DE, FR, GB, IT [2006/39] |
Former [2004/20] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PT, RO, SE, SI, SK, TR | Title | German: | Nichtflüchtiger variabler Widerstand, Speicherelement, und Skalierungsverfahren für einen nichtflüchtigen variablen Widerstand | [2004/20] | English: | Nonvolatile variable resistor, memory device, and scaling method of nonvolatile variable resistor | [2004/20] | French: | Résistance variable de type non volatile, dispositif de mémoire, et procédé de graduation d'une résistance variable de type non volatile | [2004/20] | Examination procedure | 10.07.2006 | Examination requested [2006/34] | 14.09.2006 | Despatch of a communication from the examining division (Time limit: M04) | 24.01.2007 | Reply to a communication from the examining division | 24.09.2007 | Communication of intention to grant the patent | 23.01.2008 | Fee for grant paid | 23.01.2008 | Fee for publishing/printing paid | Opposition(s) | 15.12.2008 | No opposition filed within time limit [2009/08] | Fees paid | Renewal fee | 28.11.2005 | Renewal fee patent year 03 | 29.11.2006 | Renewal fee patent year 04 | 26.11.2007 | Renewal fee patent year 05 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JPH02238659 ; | [X]US6031287 (HARSHFIELD STEVEN T [US]); | [X]WO0057498 (ENERGY CONVERSION DEVICES INC [US]); | [DA]US6204139 (LIU SHANGQING [US], et al); |