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Extract from the Register of European Patents

EP About this file: EP1353366

EP1353366 - Non-invasive electrical measurement of semiconductor wafers [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  25.02.2011
Database last updated on 02.08.2024
Most recent event   Tooltip25.02.2011Application deemed to be withdrawnpublished on 30.03.2011  [2011/13]
Applicant(s)For all designated states
Solid State Measurements, Inc.
2535 Secretariat Drive Wexford
Pennsylvania 15090 / US
[N/P]
Former [2003/42]For all designated states
Solid State Measurements, Inc.
2535 Secretariat Drive
Wexford, Pennsylvania 15090 / US
Inventor(s)01 / Howland, William H.
2535 Secretariat Drive
Wexford, Pennsylvania 15090 / US
 [2003/42]
Representative(s)Jorritsma, Ruurd, et al
Nederlandsch Octrooibureau
P.O. Box 29720
2502 LS The Hague / NL
[N/P]
Former [2003/42]Jorritsma, Ruurd, et al
Nederlandsch Octrooibureau Scheveningseweg 82 P.O. Box 29720
2502 LS Den Haag / NL
Application number, filing date03076093.811.04.2003
[2003/42]
Priority number, dateUS2002012066111.04.2002         Original published format: US 120661
[2003/42]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1353366
Date:15.10.2003
Language:EN
[2003/42]
Type: A3 Search report 
No.:EP1353366
Date:24.03.2010
[2010/12]
Search report(s)(Supplementary) European search report - dispatched on:EP24.02.2010
ClassificationIPC:H01L21/66
[2003/42]
CPC:
H01L22/14 (EP,US); G01R31/2886 (EP,US); G01R31/312 (EP,US);
H01L2924/0002 (EP,US)
C-Set:
H01L2924/0002, H01L2924/00 (EP,US)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IT,   LI,   LU,   MC,   NL,   PT,   RO,   SE,   SI,   SK,   TR [2003/42]
TitleGerman:Nichtinvasive, elektrische Messung an Halbleiterscheiben[2003/42]
English:Non-invasive electrical measurement of semiconductor wafers[2003/42]
French:Mesure electrique non-invasiv sur des tranches semi-conductrices[2003/42]
Examination procedure19.03.2004Examination requested  [2004/21]
25.09.2010Application deemed to be withdrawn, date of legal effect  [2011/13]
11.11.2010Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2011/13]
Fees paidRenewal fee
13.04.2005Renewal fee patent year 03
17.03.2006Renewal fee patent year 04
12.04.2007Renewal fee patent year 05
28.03.2008Renewal fee patent year 06
25.08.2009Renewal fee patent year 07
Penalty fee
Additional fee for renewal fee
30.04.200907   M06   Fee paid on   25.08.2009
30.04.201008   M06   Not yet paid
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Documents cited:Search[XAY]US5266895  (YAMASHITA SATORU [JP]) [X] 1-3 * column 2, line 22 - line 26; figures 3,4,5A,6,7 * [A] 12-13 [Y] 4-11,14;
 [YA]JPH10223704  (TOKYO ELECTRON LTD) [Y] 9-11,14 * figures 1,2,4,5 *[A] 12-13;
 [IAY]WO0129568  (SOLID STATE MEASUREMENTS INC [US], et al) [I] 1-2,9-11,15 * page 10, line 28 - line 32; figures 1-4 * [A] 12-13 [Y] 6-8;
 [XYI]US2002024351  (ERIGUCHI KOJI [JP], et al) [X] 1-2,9 * paragraphs [0198] - [0200]; figures 4,5,13,23,28 * [Y] 4-5,7-8 [I] 15-17;
 [X]  - HILLARD ROBERT J ET AL, "Product wafer monitoring of ultrashallow channel implants with an elastic metal gate", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AVS / AIP, MELVILLE, NEW YORK, NY, US, (200201), vol. 20, no. 1, ISSN 1071-1023, pages 488 - 491, XP012009239 [X] 15 * figures 1c,2 *

DOI:   http://dx.doi.org/10.1116/1.1424284
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