EP1357433 - Method of fabricating sub-lithographic sized line and space patterns [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 05.05.2006 Database last updated on 02.09.2024 | Most recent event Tooltip | 15.08.2008 | Change - applicant | published on 17.09.2008 [2008/38] | Applicant(s) | For all designated states Hewlett-Packard Company 3000 Hanover Street Palo Alto, CA 94304-1112 / US | [N/P] |
Former [2008/38] | For all designated states Hewlett-Packard Company 3000 Hanover Street Palo Alto CA 94304-1112 / US | ||
Former [2003/44] | For all designated states Hewlett-Packard Company 3000 Hanover Street Palo Alto, CA 94304 / US | Inventor(s) | 01 /
Lee, Heon Gyosu APT 6-602, Jong-dong, Nam-Gu, Pohang-Si Kyungbuk, Korea Zip 790-751 / KR | [2003/48] |
Former [2003/44] | 01 /
Lee, Heon 455 Brahms Way, Apt 230 Sunnyvale, CA 94087 / US | Representative(s) | Tollett, Ian, et al Williams Powell 44 Prespect Place Bromley, Kent BR2 9HN / GB | [N/P] |
Former [2003/44] | Tollett, Ian, et al Williams Powell Morley House 26-30 Holborn Viaduct London EC1A 2BP / GB | Application number, filing date | 03252487.8 | 17.04.2003 | [2003/44] | Priority number, date | US20020133772 | 23.04.2002 Original published format: US 133772 | [2003/44] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1357433 | Date: | 29.10.2003 | Language: | EN | [2003/44] | Type: | A3 Search report | No.: | EP1357433 | Date: | 23.06.2004 | [2004/26] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 12.05.2004 | Classification | IPC: | G03F7/20, G03F7/00, H01L21/033 | [2004/25] | CPC: |
B82Y10/00 (EP,US);
G03F7/0002 (EP,US);
B82Y40/00 (EP,US);
G03F7/0017 (EP,US);
H01L21/0338 (EP,US);
H01L21/31144 (EP,US);
H01L21/32139 (EP,US)
(-)
|
Former IPC [2003/44] | G03F7/20 | Designated contracting states | FR, GB [2005/11] |
Former [2003/44] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PT, RO, SE, SI, SK, TR | Title | German: | Verfahren zur Herstellung sublithographischer Linien- und Raummuster | [2003/44] | English: | Method of fabricating sub-lithographic sized line and space patterns | [2003/44] | French: | Méthode pour la fabrication de motifs de lignes et d'espacements de taille sous-lithographique | [2005/32] |
Former [2003/44] | Méthode pour la fabrication de motifs de linéaires ou spatiales sous-lithographiques | Examination procedure | 09.08.2004 | Examination requested [2004/41] | 27.12.2004 | Loss of particular rights, legal effect: designated state(s) | 14.04.2005 | Despatch of communication of loss of particular rights: designated state(s) DE, IT | 08.07.2005 | Communication of intention to grant the patent | 19.11.2005 | Application deemed to be withdrawn, date of legal effect [2006/23] | 13.01.2006 | Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time [2006/23] | Fees paid | Renewal fee | 20.04.2005 | Renewal fee patent year 03 | Penalty fee | Penalty fee Rule 85a EPC 1973 | 31.01.2005 | DE   M01   Not yet paid | 31.01.2005 | IT   M01   Not yet paid |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JPS62247530 ; | [A]JPH01189923 ; | [A]DE4236609 (SIEMENS AG [DE]) [A] 1-10 * column 1 * * column 3, line 49 - column 4, line 11; figures 1-4 *; | [A]US5795830 (CRONIN JOHN E [US], et al) [A] 1-10 * the whole document *; | [A]US5998287 (HUANG HENG SHENG [TW]) [A] 1-10 * the whole document *; | [A] - PATENT ABSTRACTS OF JAPAN, (19880413), vol. 012, no. 118, Database accession no. (E - 600), & JP62247530 A 19871028 (FUJITSU LTD) [A] 1-10 * abstract * | [A] - ANONYMOUS, "Extending the Minimal Dimensions of Photolithographic Integrated Circuit Fabrication Processing. September 1977.", IBM TECHNICAL DISCLOSURE BULLETIN, New York, US, (19770901), vol. 20, no. 4, pages 1376 - 1378, XP002277678 [A] 1-10 * the whole document * | [A] - TSUTSUMI T ET AL, "FABRICATION TECHNOLOGY OF ULTRAFINE SIO2 MASKS AND SI NANOWIRES USING OXIDATION OF VERTICAL SIDEWALLS OF A POLY-SI LAYER", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (199901), vol. 17, no. 1, ISSN 0734-211X, pages 77 - 81, XP000804175 [A] 1-10 * figure 1 * DOI: http://dx.doi.org/10.1116/1.590538 | [A] - PATENT ABSTRACTS OF JAPAN, (19891031), vol. 013, no. 481, Database accession no. (E - 838), & JP01189923 A 19890731 (NEC CORP) [A] 1-10 * abstract * |