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EP About this file: EP1357433

EP1357433 - Method of fabricating sub-lithographic sized line and space patterns [Right-click to bookmark this link]
Status	The application is deemed to be withdrawn Status updated on 05.05.2006 Database last updated on 02.09.2024
Most recent event Tooltip	15.08.2008	Change - applicant	published on 17.09.2008 [2008/38]
Applicant(s)	For all designated states Hewlett-Packard Company 3000 Hanover Street Palo Alto, CA 94304-1112 / US
	[N/P]
Former [2008/38]	For all designated states Hewlett-Packard Company 3000 Hanover Street Palo Alto CA 94304-1112 / US
Former [2003/44]	For all designated states Hewlett-Packard Company 3000 Hanover Street Palo Alto, CA 94304 / US
Inventor(s)	01 / Lee, Heon Gyosu APT 6-602, Jong-dong, Nam-Gu, Pohang-Si Kyungbuk, Korea Zip 790-751 / KR
	[2003/48]
Former [2003/44]	01 / Lee, Heon 455 Brahms Way, Apt 230 Sunnyvale, CA 94087 / US
Representative(s)	Tollett, Ian, et al Williams Powell 44 Prespect Place Bromley, Kent BR2 9HN / GB
	[N/P]
Former [2003/44]	Tollett, Ian, et al Williams Powell Morley House 26-30 Holborn Viaduct London EC1A 2BP / GB
Application number, filing date	03252487.8	17.04.2003
	[2003/44]
Priority number, date	US20020133772	23.04.2002 Original published format: US 133772
	[2003/44]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP1357433
	Date:	29.10.2003
	Language:	EN
	[2003/44]
	Type:	A3 Search report
	No.:	EP1357433
	Date:	23.06.2004
	[2004/26]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	12.05.2004
Classification	IPC:	G03F7/20, G03F7/00, H01L21/033	[2004/25]
	CPC:	B82Y10/00 (EP,US); G03F7/0002 (EP,US); B82Y40/00 (EP,US); G03F7/0017 (EP,US); H01L21/0338 (EP,US); H01L21/31144 (EP,US); (+) H01L21/32139 (EP,US) (-)
	Former IPC [2003/44]	G03F7/20
Designated contracting states	FR, GB [2005/11]
Former [2003/44]	AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PT, RO, SE, SI, SK, TR
Title	German:	Verfahren zur Herstellung sublithographischer Linien- und Raummuster	[2003/44]
	English:	Method of fabricating sub-lithographic sized line and space patterns	[2003/44]
	French:	Méthode pour la fabrication de motifs de lignes et d'espacements de taille sous-lithographique	[2005/32]
	Former [2003/44]	Méthode pour la fabrication de motifs de linéaires ou spatiales sous-lithographiques
Examination procedure	09.08.2004	Examination requested [2004/41]
	27.12.2004	Loss of particular rights, legal effect: designated state(s)
	14.04.2005	Despatch of communication of loss of particular rights: designated state(s) DE, IT
	08.07.2005	Communication of intention to grant the patent
	19.11.2005	Application deemed to be withdrawn, date of legal effect [2006/23]
	13.01.2006	Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time [2006/23]
Fees paid	Renewal fee
	20.04.2005	Renewal fee patent year 03
	Penalty fee
	Penalty fee Rule 85a EPC 1973
	31.01.2005	DE M01 Not yet paid
	31.01.2005	IT M01 Not yet paid
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[A]JPS62247530 ;
		[A]JPH01189923 ;
		[A]DE4236609 (SIEMENS AG [DE]) [A] 1-10 * column 1 * * column 3, line 49 - column 4, line 11; figures 1-4 *;
		[A]US5795830 (CRONIN JOHN E [US], et al) [A] 1-10 * the whole document *;
		[A]US5998287 (HUANG HENG SHENG [TW]) [A] 1-10 * the whole document *;
		[A] - PATENT ABSTRACTS OF JAPAN, (19880413), vol. 012, no. 118, Database accession no. (E - 600), & JP62247530 A 19871028 (FUJITSU LTD) [A] 1-10 * abstract *
		[A] - ANONYMOUS, "Extending the Minimal Dimensions of Photolithographic Integrated Circuit Fabrication Processing. September 1977.", IBM TECHNICAL DISCLOSURE BULLETIN, New York, US, (19770901), vol. 20, no. 4, pages 1376 - 1378, XP002277678 [A] 1-10 * the whole document *
		[A] - TSUTSUMI T ET AL, "FABRICATION TECHNOLOGY OF ULTRAFINE SIO2 MASKS AND SI NANOWIRES USING OXIDATION OF VERTICAL SIDEWALLS OF A POLY-SI LAYER", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (199901), vol. 17, no. 1, ISSN 0734-211X, pages 77 - 81, XP000804175 [A] 1-10 * figure 1 * DOI: http://dx.doi.org/10.1116/1.590538
		[A] - PATENT ABSTRACTS OF JAPAN, (19891031), vol. 013, no. 481, Database accession no. (E - 838), & JP01189923 A 19890731 (NEC CORP) [A] 1-10 * abstract *

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