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EP1431426
European procedure
Extract from the Register of European Patents
EP About this file: EP1431426
| EP1431426 - Substrate for epitaxial growth [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 07.12.2012 Database last updated on 21.05.2024 | Most recent event Tooltip | 07.12.2012 | No opposition filed within time limit | published on 09.01.2013 [2013/02] | Applicant(s) | For all designated states NGK Insulators, Ltd. 2-56 Suda-cho, Mizuho-ku Nagoya-City, Aichi Pref. 467-8530 / JP | [N/P] |
| Former [2004/26] | For all designated states NGK INSULATORS, LTD. 2-56 Suda-cho, Mizuho-ku Nagoya-City, Aichi Prefecture 467-8530 / JP | Inventor(s) | 01 /
Shibata, Tomohiko 2B Typical-Haimu 26Hachiman-cho Kasugai, Aichi 486-0915 / JP | 02 /
Sumiya, Shigeaki B103 Printemps-Tokiwa 1-52-1 Tokiwa-cho Handa, Aichi 475-0029 / JP | 03 /
Asai, Keiichiro 2-85 Shinjuku Meltou Nagoya, Aichi 465-0063 / JP | 04 /
Tanaka, Mitsuhiro 703 Arthills-Kirigaoka Minamikan 214-2 Kirigaoka Kirigaoka 4-chome Handa, Aichi 475-0928 / JP | [2012/05] |
| Former [2004/26] | 01 /
Shibata, Tomohiko 2B Typical-Haimu 26Hachiman-cho Kasugai, Aichi 486-0915 / JP | ||
| 02 /
Sumiya, Shigeaki B103 Printemps-Tokiwa 1-52-1 Tokiwa-cho Handa, Aichi 475-0029 / JP | |||
| 03 /
Asai, Keiichiro 2-85 Shinjuku Meltou Nagoya, Aichi 465-0063 / JP | |||
| 04 /
Tanaka, Mitsuhiro 703 Arthills-Kirigaoka Minamikan 214-2 Kirigaoka Kirigaoka 4-chome Handa, Aichi 475-0928 / JP | Representative(s) | Paget, Hugh Charles Edward, et al Mewburn Ellis LLP City Tower 40 Basinghall Street London EC2V 5DE / GB | [N/P] |
| Former [2004/26] | Paget, Hugh Charles Edward, et al Mewburn Ellis LLP York House 23 Kingsway London WC2B 6HP / GB | Application number, filing date | 03257970.8 | 17.12.2003 | [2004/26] | Priority number, date | JP20020366679 | 18.12.2002 Original published format: JP 2002366679 | [2004/26] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1431426 | Date: | 23.06.2004 | Language: | EN | [2004/26] | Type: | A3 Search report | No.: | EP1431426 | Date: | 04.10.2006 | [2006/40] | Type: | B1 Patent specification | No.: | EP1431426 | Date: | 01.02.2012 | Language: | EN | [2012/05] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 05.09.2006 | Classification | IPC: | H01L21/20, C30B29/38, C30B25/18, // H01L29/267 | [2011/34] | CPC: |
C30B25/02 (EP,US);
C30B25/18 (EP,US);
C30B29/403 (EP,US);
H01L21/02378 (EP,US);
H01L21/0243 (EP,US);
H01L21/02458 (EP,US);
H01L21/0254 (EP,US);
H01L21/0262 (EP,US);
Y10T428/12528 (EP,US);
Y10T428/265 (EP,US)
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| Former IPC [2006/40] | C30B25/18, C30B29/38, H01L21/20, // H01L29/267 | ||
| Former IPC [2004/26] | C30B25/18, C30B29/38, H01L21/20 | Designated contracting states | DE, FR, GB [2007/24] |
| Former [2004/26] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PT, RO, SE, SI, SK, TR | Title | German: | Substrat zum epitaktischen Wachstum | [2004/26] | English: | Substrate for epitaxial growth | [2004/26] | French: | Substrat pour croissance épitaxiale | [2004/26] | Examination procedure | 23.10.2006 | Examination requested [2006/49] | 28.12.2006 | Despatch of a communication from the examining division (Time limit: M04) | 02.05.2007 | Reply to a communication from the examining division | 01.08.2011 | Communication of intention to grant the patent | 28.11.2011 | Fee for grant paid | 28.11.2011 | Fee for publishing/printing paid | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 28.12.2006 | Opposition(s) | 05.11.2012 | No opposition filed within time limit [2013/02] | Fees paid | Renewal fee | 22.12.2005 | Renewal fee patent year 03 | 27.12.2006 | Renewal fee patent year 04 | 24.12.2007 | Renewal fee patent year 05 | 23.12.2008 | Renewal fee patent year 06 | 21.12.2009 | Renewal fee patent year 07 | 21.12.2010 | Renewal fee patent year 08 | 22.12.2011 | Renewal fee patent year 09 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]EP1213767 (NGK INSULATORS LTD [JP]) [Y] 1-10 * column 2, line 15 - line 24 * * column 2, line 46 - column 3, line 3 * * column 4, line 47 - line 55 * * column 5, line 48 - column 6, line 43; figure 1 * * column 6, line 53 - line 58 * * column 7, line 5 - line 36 * * column 8, line 7 - line 23 * * example 1 * * column 12, line 25 - line 44 *; | [Y] - S. STEMMER ET AL., "Film/Substrate Orientation Relationship in the AlN/6H-SiC Epitaxial System", PHYSICAL REVIEW LETTERS, (19960826), vol. 77, no. 9, pages 1797 - 1800, XP002395597 [Y] 1-10 * page 1797, column L * * page 1798, column R, paragraph LAST * DOI: http://dx.doi.org/10.1103/PhysRevLett.77.1797 | [YA] - LIN M E ET AL, "A COMPARATIVE STUDY OF GAN EPILAYERS GROWN ON SAPPHIRE AND SIC SUBSTRATES BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (19930628), vol. 62, no. 26, ISSN 0003-6951, pages 3479 - 3481, XP000382503 [Y] 7 * page 3479 * * page 3480, column R, paragraph L * [A] 1,4,5,10 DOI: http://dx.doi.org/10.1063/1.109026 | [A] - WEEKS T W ET AL, "GAN THIN FILMS DEPOSITED VIA ORGANOMETALLIC VAPOR PHASE EPITAXY ON ALPHA(6H)-SIC(0001) USING HIGH-TEMPERATURE MONOCRYSTALLINE AIN BUFFER LAYERS", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (19950717), vol. 67, no. 3, ISSN 0003-6951, pages 401 - 403, XP000522092 [A] 1,4-6,10 * page 401 - page 402; figure 1 * DOI: http://dx.doi.org/10.1063/1.114642 | [A] - W. HAGEMAN ET AL., "Growth of AlN on Etched 6H-SiC(0001) Substrates via MOCVD", PHYS. STAT. SOL., (2001), vol. 188, no. 2, pages 783 - 787, XP002395598 [A] 1-6 * page 783 - page 784 * * page 785 * DOI: http://dx.doi.org/10.1002/1521-396X(200112)188:2<783::AID-PSSA783>3.0.CO;2-W |