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Extract from the Register of European Patents

EP About this file: EP1469600

EP1469600 - NONLINEAR RESISTOR CIRCUIT USING FLOATING GATE MOSFETS [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  02.05.2008
Database last updated on 03.10.2024
Most recent event   Tooltip26.09.2008Change - representativepublished on 29.10.2008  [2008/44]
Applicant(s)For all designated states
Japan Science and Technology Agency
1-8, Honcho 4-chome Kawaguchi-shi
Saitama 332-0012 / JP
[2007/26]
Former [2004/43]For all designated states
Japan Science and Technology Agency
1-8, Honcho 4-chome
Kawaguchi-shi, Saitama 332-0012 / JP
Inventor(s)01 / HORIO, Yoshihiko
17-40-604, Chuo 1-chome
Warabi-shi, Saitama 335-0004 / JP
02 / FUJIWARA, Tetsuya
17-18, Nakazato
Hiratsuka-shi, Kanagawa 254-0054 / JP
03 / AIHARA, Kazuyuki
8-8-208, Yatsu 4-chome
Narashino-shi, Chiba 275-0026 / JP
 [2004/43]
Representative(s)Hoarton, Lloyd Douglas Charles
Forresters IP LLP
Skygarden
Erika-Mann-Strasse 11
80636 München / DE
[N/P]
Former [2008/44]Hoarton, Lloyd Douglas Charles
Forrester & Boehmert Pettenkoferstrasse 20-22
80336 Munich / DE
Former [2004/43]Hoarton, Lloyd Douglas Charles
Forrester & Boehmert, Pettenkoferstrasse 20-22
80336 München / DE
Application number, filing date03701832.222.01.2003
[2004/43]
WO2003JP00513
Priority number, dateJP2002001498924.01.2002         Original published format: JP 2002014989
[2004/43]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO03063349
Date:31.07.2003
Language:EN
[2003/31]
Type: A1 Application with search report 
No.:EP1469600
Date:20.10.2004
Language:EN
The application published by WIPO in one of the EPO official languages on 31.07.2003 takes the place of the publication of the European patent application.
[2004/43]
Type: B1 Patent specification 
No.:EP1469600
Date:27.06.2007
Language:EN
[2007/26]
Search report(s)International search report - published on:JP31.07.2003
(Supplementary) European search report - dispatched on:EP05.04.2005
ClassificationIPC:H03H11/52
[2004/43]
CPC:
H03H11/53 (EP,US); H03H11/52 (EP,US)
Designated contracting statesCH,   DE,   FR,   GB,   LI [2007/26]
Former [2004/43]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE,  SI,  SK,  TR 
Extension statesALNot yet paid
LTNot yet paid
LVNot yet paid
MKNot yet paid
RONot yet paid
TitleGerman:NICHTLINEARE WIDERSTANDSSCHALTUNG MIT FLOATING-GATE-MOSFETS[2004/43]
English:NONLINEAR RESISTOR CIRCUIT USING FLOATING GATE MOSFETS[2004/43]
French:CIRCUIT DE RESISTANCE NON LINEAIRE UTILISANT DES TRANSISTORS A EFFET DE CHAMP A PORTEE ISOLEE A GRILLE FLOTTANTE[2004/43]
Entry into regional phase20.07.2004Translation filed 
20.07.2004National basic fee paid 
20.07.2004Search fee paid 
20.07.2004Designation fee(s) paid 
20.07.2004Examination fee paid 
Examination procedure20.06.2003Request for preliminary examination filed
International Preliminary Examining Authority: JP
20.07.2004Examination requested  [2004/43]
28.06.2005Despatch of a communication from the examining division (Time limit: M06)
20.12.2005Reply to a communication from the examining division
18.12.2006Communication of intention to grant the patent
27.04.2007Fee for grant paid
27.04.2007Fee for publishing/printing paid
Opposition(s)28.03.2008No opposition filed within time limit [2008/23]
Fees paidRenewal fee
12.01.2005Renewal fee patent year 03
12.01.2006Renewal fee patent year 04
12.01.2007Renewal fee patent year 05
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[Y]FR75916E  (INT STANDARD ELECTRIC CORP) [Y] 1,4-13 * page 1, column L, paragraph 2; figures 1-4,7-10 * * page 4, column RH, paragraph 4 - page 5, column LH, paragraph 2 * * page 8, column R, paragraph 6 - page 9, column R, paragraph 2 * * page 13, column L, paragraph 6 - column R, paragraph 1 *;
 [X]  - FUJIWARA T ET AL, "N-TYPE NONLINEAR RESISTOR CIRCUITS USING FLOATING-GATE MOSFETs", DENSHI JOHO TSUSHIN GAKKAI GIJUTSU KUNKYU HOKOKU - IEICE TECHNICAL REPORT, DENSHI JOHO TSUSHIN GAKKAI, TOKYO, JP, (20020122), vol. 101, no. 614, ISSN 0913-5685, pages 15 - 22,i, XP009042737 [X] 1,4-13 * the whole document *
 [Y]  - HORIO, Y., WATARAI, K., AIHARA, K., "Nonlinear resistor circuits using capacitively coupled multi-input MOSFETs", IEICE TRANS. FUNDAMENTALS, (199909), vol. E82-A, no. 9, XP009042396 [Y] 1,4-13 * the whole document *
 [A]  - CHUA L O ET AL, "BIPOLAR - JFET - MOSFET NEGATIVE RESISTANCE DEVICES", IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, IEEE INC. NEW YORK, US, (19970204), vol. CAS-32, no. 1, pages 46 - 61, XP002024214 [A] 1,4-13 * page 46, column R, paragraph 2; figures 1a,3-8,25-31 * *Appendix A*; page 48, column R, paragraph 1 - page 49, column R, paragraph 4 * * page 52, column L, paragraph 3 - column R, paragraph 1 *
International search[A]JP2000068788  (JAPAN SCIENCE & TECH CORP);
 [Y]JPS393222B
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.