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EP About this file: EP1479103

EP1479103 - METHOD OF CREATING HIGH-QUALITY RELAXED SiGe-ON-INSULATOR FOR STRAINED Si CMOS APPLICATIONS [Right-click to bookmark this link]
Status	The application has been withdrawn Status updated on 10.06.2005 Database last updated on 31.08.2024
Most recent event Tooltip	10.06.2005	Withdrawal of application	published on 27.07.2005 [2005/30]
Applicant(s)	For all designated states International Business Machines Corporation New Orchard Road Armonk, NY 10504 / US
	[N/P]
Former [2004/48]	For all designated states International Business Machines Corporation New Orchard Road Armonk, N.Y. 10504 / US
Inventor(s)	01 / BEDELL, Stephen, W. 32 Nicole Drive Wappingers Falls, NY 12590 / US
	02 / CHU, Jack, O. 44 Shelburne Lane Manhasset Hills, NY 11040 / US
	03 / FOGEL, KEITH E. IBM UK Ltd.,INTELL.PROP.LAW, HURSLEY PARK WINCHESTER, HAMPSHIRE, SO21 2JN / GB
	04 / KOESTER, Stephen, J. 5 Iroquois Road Ossining, NY 10562 / US
	05 / SADANA, Devendra, K. 90 Sky Top Drive Pleasantville, NY 10570 / US
	06 / OTT, John, Albrecht, 37 Lindon Avenue Greenwood Lake Orange County, NY 10925 / US
	[2005/05]
Former [2004/48]	01 / BEDELL, Stephen, W. 32 Nicole Drive Wappingers Falls, NY 12590 / US
	02 / CHU, Jack, O. 44 Shelburne Lane Manhasset Hills, NY 11040 / US
	03 / FOGEL, Keith, E. 4 Lucs Lane Mohegan Lake, NY 10547 / US
	04 / KOESTER, Stephen, J. 5 Iroquois Road Ossining, NY 10562 / US
	05 / SADANA, Devendra, K. 90 Sky Top Drive Pleasantville, NY 10570 / US
	06 / OTT, John, Albrecht, 37 Lindon Avenue Greenwood Lake Orange County, NY 10925 / US
Representative(s)	Gascoyne, Belinda Jane IBM United Kingdom Limited MP 110 Hursley Park Winchester Hampshire SO21 2JN / GB
	[N/P]
Former [2004/48]	Mather, Belinda IBM United Kingdom Ltd., MP 110, Hursley Park Winchester, Hampshire SO21 2JN / GB
Application number, filing date	03731957.1	16.01.2003
	[2004/48]
	WO2003US01431
Priority number, date	US20020055138	23.01.2002 Original published format: US 55138
	[2004/48]
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO03063229
	Date:	31.07.2003
	Language:	EN
	[2003/31]
	Type:	A1 Application with search report
	No.:	EP1479103
	Date:	24.11.2004
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 31.07.2003 takes the place of the publication of the European patent application.
	[2004/48]
Search report(s)	International search report - published on:	US	31.07.2003
	(Supplementary) European search report - dispatched on:	EP	30.12.2004
Classification	IPC:	H01L21/762, H01L21/225, H01L21/324, H01L21/20, H01L21/331	[2005/06]
	CPC:	H01L21/02378 (EP,US); H01L21/20 (KR); H01L21/02612 (EP,US); H01L21/02381 (EP,US); H01L21/02488 (EP,US); H01L21/02532 (EP,US); (+) H01L21/2251 (EP,US); H01L21/324 (EP,US); H01L21/76243 (EP,US); H01L29/66916 (EP,US); H01L27/1203 (EP,US); Y10S438/938 (EP,US); Y10T428/12674 (EP,US); Y10T428/265 (EP,US); Y10T428/31848 (EP,US) (-)
	Former IPC [2004/48]	H01L21/331
Designated contracting states	AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PT, SE, SI, SK, TR [2004/48]
Extension states	AL	Not yet paid
	LT	Not yet paid
	LV	Not yet paid
	MK	Not yet paid
	RO	Not yet paid
Title	German:	VERFAHREN ZUR ERZEUGUNG EINES QUALITATIV HOCHWERTIGEN RELAXIERTEN SiGe-ON-ISOLATORS FÜR CMOS-ANWENDUNGEN MIT VERSPANNTEM Si	[2004/48]
	English:	METHOD OF CREATING HIGH-QUALITY RELAXED SiGe-ON-INSULATOR FOR STRAINED Si CMOS APPLICATIONS	[2004/48]
	French:	PROCEDE DE PRODUCTION DE SIGE SUR ISOLANT DE HAUTE QUALITE A RELAXATION POUR APPLICATIONS CMOS SI CONTRAINT	[2004/48]
Entry into regional phase	11.08.2004	National basic fee paid
	11.08.2004	Search fee paid
	11.08.2004	Designation fee(s) paid
	11.08.2004	Examination fee paid
Examination procedure	20.08.2003	Request for preliminary examination filed International Preliminary Examining Authority: US
	11.08.2004	Amendment by applicant (claims and/or description)
	11.08.2004	Examination requested [2004/48]
	29.03.2005	Application withdrawn by applicant [2005/30]
Fees paid	Renewal fee
	17.01.2005	Renewal fee patent year 03
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[XY]JP2000243946 ;
		[DXY]US5759898 (EK BRUCE A [US], et al) [DX] 1-3,8,9,12-17 * column 1, line 10 - line 41 * * column 1, line 57 - column 2, line 34 * * column 2, line 63 - column 4, line 6, paragraphs 1,2 * [Y] 6,7,10-12,17;
		[XAY]WO9953539 (MASSACHUSETTS INST TECHNOLOGY [US]) [X] 13-15 * page 8, line 29 - page 9, line 6 * * page 18, line 4 - line 9 * * page 18, line 16 - line 25; figure 10 * [A] 1-3,8-12 [Y] 16;
		[PXA]WO0215244 (CHENG ZHI YUAN [US]) [PX] 13-15,17 * page 1, line 10 - line 18 * * page 5, line 22 - line 27; figure 1C * * page 5, line 28 - line 34; figure 3 *[PA] 1-3,8-12;
		[PXA]EP1248294 (CANON KK [JP]) [PX] 1-4,8,9,12-17 * column 7, line 55 - column 8, line 9; figure 1A * * column 8, line 55 - line 58 * * column 9, line 55 - column 10, line 22; figure 1B * * column 11, line 13 - line 43; figures 1D,1E * * column 11, line 53 - column 12, line 35; figures 2A,2B * * column 13, line 23 - line 32 * * column 16, line 29 - line 42; figure 3D * * column 16, line 55 - column 17, line 3; figure 3E * [PA] 5,6;
		[PXA]WO02082514 (MASSACHUSETTS INST TECHNOLOGY [US]) [PX] 13-15,17 * page 1, line 8 - line 12 * * page 3, line 27 - line 31 * * page 4, line 27 - line 34 * * page 5, line 9 - line 34; figures 1D,1E * * page 6, line 1 - line 7; figure 3 * [PA] 1-3,8-12
		[XY] - PATENT ABSTRACTS OF JAPAN, (20010103), vol. 2000, no. 12, & JP2000243946 A 20000908 (TOSHIBA CORP) [X] 1-5,8,9,13-17 * abstract * * paragraph [0060] - paragraph [0062]; figure 5 * * paragraph [0068] - paragraph [0076] * * paragraph [0078] - paragraph [0081]; figure 8 * [Y] 6,7,10-12,16,17
	International search	[Y]US5846867 (GOMI TAKAYUKI [JP], et al);
		[Y]US6190975 (KUBO MINORU [JP], et al)

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