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EP1548160
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| EP1548160 - METHOD FOR PRODUCING GROUP III ELEMENT NITRIDE SINGLE CRYSTAL AND GROUP III ELEMENT NITRIDE TRANSPARENT SINGLE CRYSTAL PREPARED THEREBY [Right-click to bookmark this link] | Status | The application has been refused Status updated on 27.01.2012 Database last updated on 14.11.2024 | Most recent event Tooltip | 27.01.2012 | Refusal of application | published on 29.02.2012 [2012/09] | Applicant(s) | For all designated states Osaka University 1-1, Yamadaoka Suita-shi Osaka 565-0871 / JP | [2011/14] |
| Former [2005/26] | For all designated states Osaka Industrial Promotion Organization Mydome Osaka, 2-5, Honmachibashi, Chuo-ku Osaka-shi, Osaka 540-0029 / JP | Inventor(s) | 01 /
SASAKI, Takatomo, Graduate School of Engineering Osaka University, 2-1, Yamadaoka Suita-shi, Osaka 565-0871 / JP | 02 /
MORI, Yusuke, Graduate School of Engineering Osaka University, 2-1, Yamadaoka Suita-shi, Osaka 565-0871 / JP | 03 /
YOSHIMURA, Masashi. Graduate School of Engineering Osaka University, 2-1, Yamadaoka Suita-shi, Osaka 565-0871 / JP | 04 /
KAWAMURA, Fumio, Graduate School of Engineering Osaka University, 2-1, Yamadaoka Suita-shi, Osaka 565-0871 / JP | 05 /
OMAE, Kunimichi, Graduate School of Engineering Osaka University, 2-1, Yamadaoka Suita-shi, Osaka 565-0871 / JP | 06 /
IWAHASHI, Tomoya; 4-1-25-326, Kamiji, Higashinari-ku; Osaka-shi, Osaka 537-0003; / JP | 07 /
MORISHITA, Masanori Osaka University, 2-1, Yamadaoka Suita-shi, Osaka 565-0871 / JP | [2005/26] | Representative(s) | Matthews, Derek Peter Dehns St Bride's House 10 Salisbury Square London EC4Y 8JD / GB | [N/P] |
| Former [2005/26] | Matthews, Derek Peter Frank B. Dehn & Co., European Patent Attorneys, 179 Queen Victoria Street London EC4V 4EL / GB | Application number, filing date | 03738566.3 | 30.06.2003 | [2005/26] | WO2003JP08258 | Priority number, date | JP20020223190 | 31.07.2002 Original published format: JP 2002223190 | JP20020339875 | 22.11.2002 Original published format: JP 2002339875 | JP20020382610 | 27.12.2002 Original published format: JP 2002382610 | JP20030027888 | 05.02.2003 Original published format: JP 2003027888 | JP20030078680 | 20.03.2003 Original published format: JP 2003078680 | JP20030088482 | 27.03.2003 Original published format: JP 2003088482 | [2005/26] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2004013385 | Date: | 12.02.2004 | Language: | EN | [2004/07] | Type: | A1 Application with search report | No.: | EP1548160 | Date: | 29.06.2005 | Language: | EN | The application published by WIPO in one of the EPO official languages on 12.02.2004 takes the place of the publication of the European patent application. | [2005/26] | Search report(s) | International search report - published on: | JP | 12.02.2004 | (Supplementary) European search report - dispatched on: | EP | 30.03.2009 | Classification | IPC: | C30B29/38, H01L21/205, H01L21/208 | [2005/26] | CPC: |
C30B19/02 (EP,US);
C30B29/38 (KR);
C30B29/403 (EP,US);
C30B9/10 (EP,US);
C30B9/12 (EP,US)
| Designated contracting states | DE, FR [2005/47] |
| Former [2005/26] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PT, RO, SE, SI, SK, TR | Extension states | AL | Not yet paid | LT | Not yet paid | LV | Not yet paid | MK | Not yet paid | Title | German: | VERFAHREN ZUR HERSTELLUNG EINES EINKRISTALLS AUS EINEM NITRID EINES ELEMENTS DER GRUPPE III UND DARAUS HERGESTELLTER TRANSPARENTER EINKRISTALL AUS EINEM NITRID EINES ELEMENTS DER GRUPPE III | [2005/26] | English: | METHOD FOR PRODUCING GROUP III ELEMENT NITRIDE SINGLE CRYSTAL AND GROUP III ELEMENT NITRIDE TRANSPARENT SINGLE CRYSTAL PREPARED THEREBY | [2005/26] | French: | PROCEDE POUR PRODUIRE UN MONOCRISTAL DE NITRURE D'ELEMENT DU GROUPE III ET MONOCRISTAL TRANSPARENT DE NITRURE D'ELEMENT DU GROUPE III REALISE AINSI | [2005/26] | Entry into regional phase | 25.02.2005 | Translation filed | 25.02.2005 | National basic fee paid | 25.02.2005 | Search fee paid | 25.02.2005 | Designation fee(s) paid | 25.02.2005 | Examination fee paid | Examination procedure | 25.02.2005 | Examination requested [2005/26] | 16.03.2005 | Amendment by applicant (claims and/or description) | 01.06.2010 | Despatch of a communication from the examining division (Time limit: M06) | 10.12.2010 | Reply to a communication from the examining division | 14.10.2011 | Despatch of communication that the application is refused, reason: substantive examination [2012/09] | 24.10.2011 | Application refused, date of legal effect [2012/09] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 01.06.2010 | Fees paid | Renewal fee | 23.06.2005 | Renewal fee patent year 03 | 26.06.2006 | Renewal fee patent year 04 | 25.06.2007 | Renewal fee patent year 05 | 28.03.2008 | Renewal fee patent year 06 | 24.06.2009 | Renewal fee patent year 07 | 31.03.2010 | Renewal fee patent year 08 | 28.06.2011 | Renewal fee patent year 09 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [ ] - No further relevant documents disclosed | International search | [Y]EP0811708 (SUMITOMO ELECTRIC INDUSTRIES [JP]); | [Y]US6270569 (SHIBATA MASATOMO [JP], et al); | [X]WO0184608 (TOYODA GOSEI KK [JP], et al); | [A]WO0124921 (GEN ELECTRIC [US]); | [A]US2002046695 (SARAYAMA SEIJI [JP], et al) | [X] - MASANORI MORISHITA ET AL., "growth of bulk gan single crystals in metal-sodium flux system", JOURNAL OF THE CRYSTALLOGRAPHIC SOCIETY OF JAPAN, (20020701), vol. 29, no. 2, page 120, XP002973319 | by applicant | US5868837 | - J. PHYS. CHEM. SOLIDS, (1995), vol. 56, page 639 | - J. JAP. ASSOC. CRYST. GROWTH, (200207), vol. 29, page 120 | - JOURNAL OF CRYSTAL GROWTH, (2003), vol. 247, pages 275 - 278 |