Deutsch English Français

Contact

EP1549786

European procedure

Quick help

Maintenance news

Scheduled maintenance

Regular maintenance outages:
between 05.00 and 05.15 hrs CET (Monday to Sunday).

Other outages
Availability
Register Forum

2022.02.11

More...

News flashes

News Flashes

New version of the European Patent Register – SPC proceedings information in the Unitary Patent Register.

2024-07-24

More...

Extract from the Register of European Patents

EP About this file: EP1549786

EP1549786 - METHOD FOR SOLID-STATE SINGLE CRYSTAL GROWTH [Right-click to bookmark this link]
Status	The application is deemed to be withdrawn Status updated on 02.12.2016 Database last updated on 02.08.2024
Most recent event Tooltip	06.12.2016	New entry: Additional fee for renewal fee: despatch of communication + time limit
Applicant(s)	For all designated states Ceracomp Co., Ltd. 100, Galsan-li, Tangjeong-myeon Choongchung-nam-do Asan-si 336-840 / KR
	[N/P]
Former [2005/27]	For all designated states Ceracomp Co., Ltd. 100, Galsan-li, Tangjeong-myeon Choongchung-nam-do, Asan-si 336-840 / KR
Inventor(s)	01 / Lee, Ho-Yong 23-901 Hanyang-Apt., 493, Apgujeong-dong Kangnam-gu, Seoul 135-110 / KR
	02 / Lee, Jong-Bong 195, 1-gu, Dokjeong-Li, Ipjang-Myeon Choongchung-nam-do, Chunan-city 330-823 / KR
	03 / Hur, Tae-Moo Ma-102 Poonglim-jootaek, 829-11, Seojeong-dong Kyonggi-do, Pyeongtaek-city 459-813 / KR
	04 / Kim, Dong-Ho 429-6, 1-dong, Seongsoo-1-ga Seongdong-gu, Seoul 133-111 / KR
	[2005/27]
Representative(s)	Novagraaf Technologies Bâtiment O2 2, rue Sarah Bernhardt CS90017 92665 Asnières-sur-Seine Cedex / FR
	[N/P]
Former [2010/09]	Enderlin, Eric André NOVAGRAAF IP 122, rue Edouard Vaillant 92593 Levallois-Perret Cedex / FR
Former [2010/09]	Sayettat, Julien Christian Strato-IP 18, rue Soleillet 75020 Paris / FR
Former [2009/37]	Sayettat, Julien Christian NOVAGRAAF IP 122, rue Edouard Vaillant 92593 Levallois-Perret Cedex / FR
Former [2005/27]	Sayettat, Julien Christian BREESE DERAMBURE MAJEROWICZ 38, avenue de l'Opéra 75002 Paris / FR
Application number, filing date	03751495.7	09.10.2003
	[2005/27]
	WO2003KR02078
Priority number, date	KR20020062033	11.10.2002 Original published format: KR 2002062033
	KR20030069867	08.10.2003 Original published format: KR 2003069867
	[2005/27]
Filing language	KO
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO2004033767
	Date:	22.04.2004
	Language:	EN
	[2004/17]
	Type:	A1 Application with search report
	No.:	EP1549786
	Date:	06.07.2005
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 22.04.2004 takes the place of the publication of the European patent application.
	[2005/27]
Search report(s)	International search report - published on:	KR	22.04.2004
	(Supplementary) European search report - dispatched on:	EP	24.09.2009
Classification	IPC:	C30B1/02	[2005/27]
	CPC:	C30B1/02 (EP,KR,US); C30B29/30 (EP,US); C30B29/32 (EP,US)
Designated contracting states	AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PT, RO, SE, SI, SK, TR [2005/27]
Extension states	AL	Not yet paid
	LT	Not yet paid
	LV	Not yet paid
	MK	Not yet paid
Title	German:	VERFAHREN ZUM ZÜCHTEN VON EINKRISTALLEN IN FESTEM ZUSTAND	[2005/27]
	English:	METHOD FOR SOLID-STATE SINGLE CRYSTAL GROWTH	[2005/27]
	French:	PROCEDE DE CROISSANCE DE MONOCRISTAUX A L'ETAT SOLIDE	[2005/27]
Entry into regional phase	22.04.2004	Translation filed
	25.03.2005	National basic fee paid
	31.03.2005	Search fee paid
	25.03.2005	Designation fee(s) paid
	25.03.2005	Examination fee paid
Examination procedure	25.03.2005	Examination requested [2005/27]
	14.01.2010	Amendment by applicant (claims and/or description)
	12.08.2010	Despatch of a communication from the examining division (Time limit: M04)
	02.12.2010	Reply to a communication from the examining division
	20.01.2012	Despatch of a communication from the examining division (Time limit: M04)
	21.05.2012	Reply to a communication from the examining division
	28.11.2012	Despatch of a communication from the examining division (Time limit: M02)
	08.02.2013	Reply to a communication from the examining division
	12.06.2013	Despatch of a communication from the examining division (Time limit: M04)
	22.10.2013	Reply to a communication from the examining division
	21.03.2016	Despatch of a communication from the examining division (Time limit: M04)
	02.08.2016	Application deemed to be withdrawn, date of legal effect [2017/01]
	01.09.2016	Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2017/01]
Divisional application(s)	EP12174244.9 / EP2505694
	The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 12.08.2010
Fees paid	Renewal fee
	18.10.2005	Renewal fee patent year 03
	24.10.2006	Renewal fee patent year 04
	31.10.2007	Renewal fee patent year 05
	14.10.2008	Renewal fee patent year 06
	28.10.2009	Renewal fee patent year 07
	15.10.2010	Renewal fee patent year 08
	18.10.2011	Renewal fee patent year 09
	26.10.2012	Renewal fee patent year 10
	16.10.2013	Renewal fee patent year 11
	06.10.2014	Renewal fee patent year 12
	29.10.2015	Renewal fee patent year 13
	Penalty fee
	Additional fee for renewal fee
	31.10.2016	14 M06 Not yet paid
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[X]JPS5921591 (MATSUSHITA ELECTRIC IND CO LTD) [X] 1,2,4 * abstract *;
		[XY]WO0106042 (CERACOMP CO LTD [KR], et al) [X] 1-4,9-25 * abstract * * page 5, columns 23-25 * * page 6, lines 1-6 * * page 11, lines 19-25 * * page 12, lines 1,2 * * page 10, lines 2-5,25 * * page 11, lines 1,19-24; example 6 * * figure 2 * * page 17, lines 9-19 * * page 31, lines 3-5; example 8 * * page 22, lines 17-24; figure 11 * * page 28, lines 13-16 * * page 29, lines 3,4, 12-18 * * page 30, lines 11,12 * * claims 1,3,7 * * page 20, lines 2,9,10; example 3 * * page 27, lines 18-25 * * page 28, lines 1-4; figures 17a,17b; example 6 * * page 21, lines 2-12; example 4 * [Y] 5-8,26;
		[Y]WO0163021 (CERACOMP CO LTD [KR], et al) [Y] 26 * page 17, line 20; example 4 *;
		[Y] - W. E. BENSON, J. A. WERT, "the effect of initial grain size distribution on abnormal grain growth in single-phase materials", ACTA MATERIALIA, (19980918), vol. 46, no. 15, pages 5323 - 5333, XP008111649 [Y] 5-8 * page 5324, column 1, paragraph 4 * * page 5325, column 1, paragraph 1 * * page 5324, column 2, paragraph 5 * * page 5331, column 2, paragraph 1; figure 5b *
		[A] - HILLERT ET AL, "On the theory of normal and abnormal grain growth", ACTA METALLURGICA, PERGAMON PRESS, US, vol. 13, no. 3, ISSN 0001-6160, (19650301), pages 227 - 238, (19650301), XP024029825 DOI: http://dx.doi.org/10.1016/0001-6160(65)90200-2
		[A] - LEE H-Y ET AL, "Fabrication of BaTiO3 single crystals using secondary abnormal grain growth", JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, ELSEVIER SCIENCE PUBLISHERS, BARKING, ESSEX, GB, (20000901), vol. 20, no. 10, ISSN 0955-2219, pages 1595 - 1597, XP004209841 DOI: http://dx.doi.org/10.1016/S0955-2219(00)00030-3
	International search	[A]WO0163021 (CERACOMP CO LTD [KR], et al);
		[A]WO0106042 (CERACOMP CO LTD [KR], et al);
		[A]JPH05246800 (NGK INSULATORS LTD);
		[A]JPH05155696 (NGK INSULATORS LTD)
	Examination	US4519870

The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.

Legal notice
Terms of use
24.2.25; 35p