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EP1597770
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EP About this file: EP1597770
| EP1597770 - BIPOLAR TRANSISTOR WITH AN IMPROVED BASE EMITTER JUNCTION AND METHOD FOR THE PRODUCTION THEREOF [Right-click to bookmark this link] | Status | The application has been refused Status updated on 03.07.2015 Database last updated on 31.08.2024 | Most recent event Tooltip | 03.07.2015 | Refusal of application | published on 05.08.2015 [2015/32] | Applicant(s) | For all designated states austriamicrosystems AG Schloss Premstätten 8141 Unterpremstätten / AT | [2005/47] | Inventor(s) | 01 /
MINIXHOFER, Rainer Josef-Krainer-Ring 2 A-8141 Unterpremstätten / AT | 02 /
ROEHRER, Georg Hafnerriegel 8a A-8010 Graz / AT | [2006/52] |
| Former [2005/47] | 01 /
MINIXHOFER, Rainer Josef-Krainer-Ring 2 A-8141 Unterpremstätten / AT | ||
| 02 /
ROEHRER, Georg Fröhlichgasse 19 A-8010 Graz / AT | Representative(s) | Epping - Hermann - Fischer Patentanwaltsgesellschaft mbH Schlossschmidstrasse 5 80639 München / DE | [N/P] |
| Former [2008/30] | Epping - Hermann - Fischer Patentanwaltsgesellschaft mbH Ridlerstrasse 55 80339 München / DE | ||
| Former [2005/47] | Epping - Hermann - Fischer Patentanwaltsgesellschaft mbH Ridlerstrasse 55 80339 München / DE | Application number, filing date | 03785841.2 | 16.12.2003 | [2005/47] | WO2003EP14339 | Priority number, date | DE2003108870 | 28.02.2003 Original published format: DE 10308870 | [2005/47] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | WO2004077571 | Date: | 10.09.2004 | Language: | DE | [2004/37] | Type: | A1 Application with search report | No.: | EP1597770 | Date: | 23.11.2005 | Language: | DE | The application published by WIPO in one of the EPO official languages on 10.09.2004 takes the place of the publication of the European patent application. | [2005/47] | Search report(s) | International search report - published on: | EP | 10.09.2004 | Classification | IPC: | H01L29/732, H01L29/08 | [2005/47] | CPC: |
H01L29/732 (EP,US);
H01L29/0804 (EP,US);
H01L29/165 (EP,US);
H01L29/7378 (EP,US);
H01L21/26586 (EP,US);
H01L29/1608 (EP,US)
| Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PT, RO, SE, SI, SK, TR [2005/47] | Extension states | AL | Not yet paid | LT | Not yet paid | LV | Not yet paid | MK | Not yet paid | Title | German: | BIPOLARTRANSISTOR MIT VERBESSERTEM BASIS-EMITTER- BERGANG UND VERFAHREN ZUR HERSTELLUNG | [2005/47] | English: | BIPOLAR TRANSISTOR WITH AN IMPROVED BASE EMITTER JUNCTION AND METHOD FOR THE PRODUCTION THEREOF | [2005/47] | French: | TRANSISTOR BIPOLAIRE A JONCTION BASE-EMETTEUR AMELIOREE ET PROCEDE DE PRODUCTION | [2005/47] | Entry into regional phase | 03.06.2005 | National basic fee paid | 03.06.2005 | Designation fee(s) paid | 03.06.2005 | Examination fee paid | Examination procedure | 28.09.2004 | Request for preliminary examination filed International Preliminary Examining Authority: EP | 03.06.2005 | Examination requested [2005/47] | 19.09.2013 | Despatch of a communication from the examining division (Time limit: M04) | 14.01.2014 | Reply to a communication from the examining division | 10.03.2015 | Cancellation of oral proceeding that was planned for 25.03.2015 | 17.03.2015 | Despatch of communication that the application is refused, reason: substantive examination [2015/32] | 25.03.2015 | Date of oral proceedings (cancelled) | 27.03.2015 | Application refused, date of legal effect [2015/32] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 19.09.2013 | Fees paid | Renewal fee | 28.12.2005 | Renewal fee patent year 03 | 27.12.2006 | Renewal fee patent year 04 | 27.12.2007 | Renewal fee patent year 05 | 23.12.2008 | Renewal fee patent year 06 | 22.12.2009 | Renewal fee patent year 07 | 15.12.2010 | Renewal fee patent year 08 | 19.12.2011 | Renewal fee patent year 09 | 19.12.2012 | Renewal fee patent year 10 | 17.12.2013 | Renewal fee patent year 11 | Penalty fee | Additional fee for renewal fee | 31.12.2014 | 12 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [A]EP0375965 (FUJITSU LTD [JP]) [A] 1-12 * the whole document *; | [A]EP0000327 (IBM [US]) [A] 1-12 * the whole document *; | [A]EP0740351 (NEC CORP [JP]) [A] 4 * the whole document * | [A] - BEHAMMER D ET AL, "Low temperature ultra-scaled fully self-aligned transistor technology (LOTUS) for SiGe-HBTs", HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, 1995. PROCEEDINGS., IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN ITHACA, NY, USA 7-9 AUG. 1995, NEW YORK, NY, USA,IEEE, US, (19950807), ISBN 0-7803-2442-0, pages 142 - 151, XP010154225 [A] 1-12 * page 143, line 25 - page 144, column 6; figure 1A * DOI: http://dx.doi.org/10.1109/CORNEL.1995.482429 | [A] - "SELECTIVE GERMANIUM-ETCH EMITTER OPENING", IBM TECHNICAL DISCLOSURE BULLETIN, IBM CORP. NEW YORK, US, (19920801), vol. 35, no. 3, ISSN 0018-8689, pages 428 - 431, XP000326331 [A] 1-12 * the whole document * | Examination | FR2693840 | EP0510374 | US6043130 | - ZHANG G ET AL, "A comparison of npn and pnp profile design tradeoffs for complementary SiGe HBT Technology", SOLID STATE ELECTRONICS, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, (20001101), vol. 44, no. 11, doi:10.1016/S0038-1101(00)00165-9, ISSN 0038-1101, pages 1949 - 1954, XP004219506 DOI: http://dx.doi.org/10.1016/S0038-1101(00)00165-9 | by applicant | FR2693840 | EP0510374 | US6043130 |