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Extract from the Register of European Patents

EP About this file: EP1484796

EP1484796 - Semiconductor device and manufacturing method of the same [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  29.01.2010
Database last updated on 02.11.2024
Most recent event   Tooltip29.01.2010Application deemed to be withdrawnpublished on 03.03.2010  [2010/09]
Applicant(s)For all designated states
SANYO ELECTRIC CO., LTD.
5-5, Keihanhondori 2-chome
Moriguchi-shi, Osaka 570-8677 / JP
[N/P]
Former [2004/50]For all designated states
Sanyo Electric Co., Ltd.
5-5, Keihanhondori 2-chome
Moriguchi-shi, Osaka 570-8677 / JP
Inventor(s)01 / Ikeda, Osamu
2-1-8 Fuji Oizumi-machi
Ora-gun Gunma / JP
02 / Ohkoda, Toshiyuki
5-16-9 Asahi Oizumi-machi
Ora-gun Gunma / JP
 [2004/50]
Representative(s)Glawe, Delfs, Moll
Partnerschaft mbB von
Patent- und Rechtsanwälten
Rothenbaumchaussee 58
20148 Hamburg / DE
[N/P]
Former [2009/26]Glawe, Delfs, Moll
Patent- und Rechtsanwälte Rothenbaumchaussee 58
20148 Hamburg / DE
Former [2004/50]Glawe, Delfs, Moll
Patent- und Rechtsanwälte, Rothenbaumchaussee 58
20148 Hamburg / DE
Application number, filing date04013033.802.06.2004
[2004/50]
Priority number, dateJP2003016163406.06.2003         Original published format: JP 2003161634
[2004/50]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1484796
Date:08.12.2004
Language:EN
[2004/50]
Type: A3 Search report 
No.:EP1484796
Date:12.03.2008
[2008/11]
Search report(s)(Supplementary) European search report - dispatched on:EP11.02.2008
ClassificationIPC:H01L23/31
[2004/50]
CPC:
B81B7/007 (EP,US); H01L27/14 (KR); H01L23/00 (KR);
H01L27/14618 (EP,US); H01L27/14806 (EP,US); B81C2203/0118 (EP,US);
H01L27/1462 (EP,US); H01L2924/16235 (EP,US); Y10S257/924 (EP,US) (-)
Designated contracting statesDE,   FI,   FR,   GB [2008/47]
Former [2004/50]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IT,  LI,  LU,  MC,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Halbleiteranordnung und Herstellungsverfahren dafür[2004/50]
English:Semiconductor device and manufacturing method of the same[2004/50]
French:Composant semi-conducteur et son procédé de fabrication[2004/50]
Examination procedure05.09.2008Examination requested  [2008/43]
13.09.2008Loss of particular rights, legal effect: designated state(s)
22.10.2008Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, GR, HU, IE, IT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR
27.04.2009Despatch of a communication from the examining division (Time limit: M04)
08.09.2009Application deemed to be withdrawn, date of legal effect  [2010/09]
14.10.2009Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2010/09]
Fees paidRenewal fee
27.03.2006Renewal fee patent year 03
27.06.2007Renewal fee patent year 04
25.03.2008Renewal fee patent year 05
24.06.2009Renewal fee patent year 06
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Documents cited:Search[XY]JPH06249708  (NISSAN MOTOR) [X] 1-8 * abstract * [Y] 10-18;
 [Y]US5686171  (VOKOUN EDWARD R [US], et al) [Y] 11-18* column 1, line 31 - column 2, line 26; figure 1 *;
 [Y]US6384353  (HUANG JENN-HWA [US], et al) [Y] 10 * column 2, line 43 - column 3, line 11; figure 5 *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.